Inventor · disambiguated record
Bénédite Osternaud
Also filed as: OSTERNAUD BENEDITE
9 granted patents·2 pending applications·113 citations·filing 2003–2010
88Inventor score
Top patents by PatentIndex Score
11 records- 0192US6991956B2Methods for transferring a thin layer from a wafer having a buffer layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jan 31, 2006·23 cites·23 claims
- 0288US7256075B2Recycling of a wafer comprising a multi-layer structure after taking-off a thin layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 14, 2007·20 cites·30 claims
- 0383US7018910B2Transfer of a thin layer from a wafer comprising a buffer layerSOITEC SILICON ON INSULATOR·Filed 2003·Granted Mar 28, 2006·30 cites·27 claims
- 0476US7375008B2Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereofSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 20, 2008·6 cites·27 claims
- 0576US7008857B2Recycling a wafer comprising a buffer layer, after having separated a thin layer therefromSOITEC SILICON ON INSULATOR·Filed 2004·Granted Mar 7, 2006·16 cites·36 claims
- 0671US7602046B2Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereofSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 13, 2009·4 cites·22 claims
- 0765US6908774B2Method and apparatus for adjusting the thickness of a thin layer of semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2003·Granted Jun 21, 2005·9 cites·25 claims
- 0852US7033905B2Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical meansSOITEC SILICON ON INSULATOR·Filed 2003·Granted Apr 25, 2006·5 cites·33 claims
- 0950US7378729B2Recycling a wafer comprising a buffer layer, after having separated a thin layer therefromSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 27, 2008·0 cites·20 claims
- 1044US2010167500A1Method of recycling an epitaxied donor waferS O TEC SILICON ON INSULATOR T·Filed 2010·Application pending·0 cites
- 1138US2004087042A1Method and apparatus for adjusting the thickness of a layer of semiconductor materialFiled 2003·Application pending·0 cites
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