Inventor · disambiguated record
Saied N. Tehrani
Also filed as: TEHRANI SAIED · TEHRANI SAIED N · TEHRANI SAIED NIKOO
88 granted patents·5,749 citations·filing 1989–2010
99Inventor score
Top patents by PatentIndex Score
88 records- 0199US6211090B1Method of fabricating flux concentrating layer for use with magnetoresistive random access memoriesMOTOROLA INC·Filed 2000·Granted Apr 3, 2001·312 cites·20 claims
- 0298US6835423B2Method of fabricating a magnetic element with insulating veilsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 28, 2004·141 cites·10 claims
- 0398US6174737B1Magnetic random access memory and fabricating method thereofMOTOROLA INC·Filed 1999·Granted Jan 16, 2001·270 cites·7 claims
- 0498US5966323ALow switching field magnetoresistive tunneling junction for high density arraysMOTOROLA INC·Filed 1997·Granted Oct 12, 1999·242 cites·12 claims
- 0598US5943574AMethod of fabricating 3D multilayer semiconductor circuitsMOTOROLA INC·Filed 1998·Granted Aug 24, 1999·399 cites·16 claims
- 0698US5940319AMagnetic random access memory and fabricating method thereofMOTOROLA INC·Filed 1998·Granted Aug 17, 1999·313 cites·11 claims
- 0798US5734605AMulti-layer magnetic tunneling junction memory cellsMOTOROLA INC·Filed 1996·Granted Mar 31, 1998·228 cites·21 claims
- 0897US5861328AMethod of fabricating GMR devicesMOTOROLA INC·Filed 1996·Granted Jan 19, 1999·227 cites·30 claims
- 0996US6153443AMethod of fabricating a magnetic random access memoryMOTOROLA INC·Filed 1998·Granted Nov 28, 2000·164 cites·22 claims
- 1096US5732016AMemory cell structure in a magnetic random access memory and a method for fabricating thereofMOTOROLA INC·Filed 1996·Granted Mar 24, 1998·167 cites·18 claims
- 1196US5477169ALogic circuit with negative differential resistance deviceMOTOROLA INC·Filed 1994·Granted Dec 19, 1995·96 cites·18 claims
- 1295US6205052B1Magnetic element with improved field response and fabricating method thereofMOTOROLA INC·Filed 1999·Granted Mar 20, 2001·96 cites·19 claims
- 1395US5659499AMagnetic memory and method thereforMOTOROLA INC·Filed 1995·Granted Aug 19, 1997·130 cites·3 claims
- 1495US5298763AIntrinsically doped semiconductor structure and method for makingMOTOROLA INC·Filed 1992·Granted Mar 29, 1994·126 cites·13 claims
- 1594US6365419B1High density MRAM cell arrayMOTOROLA INC·Filed 2000·Granted Apr 2, 2002·101 cites·27 claims
- 1694US5920500AMagnetic random access memory having stacked memory cells and fabrication method thereforMOTOROLA INC·Filed 1996·Granted Jul 6, 1999·114 cites·15 claims
- 1794US5838608AMulti-layer magnetic random access memory and method for fabricating thereofMOTOROLA INC·Filed 1997·Granted Nov 17, 1998·121 cites·22 claims
- 1894US5768181AMagnetic device having multi-layer with insulating and conductive layersMOTOROLA INC·Filed 1997·Granted Jun 16, 1998·121 cites·20 claims
- 1994US5748519AMethod of selecting a memory cell in a magnetic random access memory deviceMOTOROLA INC·Filed 1996·Granted May 5, 1998·114 cites·15 claims
- 2093US8228715B2Structures and methods for a field-reset spin-torque MRAMTHOMAS ANDRE·Filed 2010·Granted Jul 24, 2012·18 cites·24 claims
- 2193US6544801B1Method of fabricating thermally stable MTJ cell and apparatusMOTOROLA INC·Filed 2000·Granted Apr 8, 2003·99 cites·50 claims
- 2293US5953248ALow switching field magnetic tunneling junction for high density arraysMOTOROLA INC·Filed 1998·Granted Sep 14, 1999·111 cites·12 claims
- 2393US5902690AStray magnetic shielding for a non-volatile MRAMMOTOROLA INC·Filed 1997·Granted May 11, 1999·149 cites·15 claims
- 2492US6233172B1Magnetic element with dual magnetic states and fabrication method thereofMOTOROLA INC·Filed 1999·Granted May 15, 2001·205 cites·19 claims
- 2592US5917749AMRAM cell requiring low switching fieldMOTOROLA INC·Filed 1997·Granted Jun 29, 1999·94 cites·8 claims
- 2692US5804458AMethod of fabricating spaced apart submicron magnetic memory cellsMOTOROLA INC·Filed 1996·Granted Sep 8, 1998·78 cites·27 claims
- 2790US6285581B1MRAM having semiconductor device integrated thereinMOTOROLA INC·Filed 1999·Granted Sep 4, 2001·76 cites·20 claims
- 2890US5699293AMethod of operating a random access memory device having a plurality of pairs of memory cells as the memory deviceMOTOROLA INC·Filed 1996·Granted Dec 16, 1997·80 cites·15 claims
- 2989US5702831AFerromagnetic GMR materialMOTOROLA INC·Filed 1995·Granted Dec 30, 1997·45 cites·15 claims
- 3088US6909631B2MRAM and methods for reading the MRAMFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 21, 2005·47 cites·31 claims
- 3188US5959880ALow aspect ratio magnetoresistive tunneling junctionMOTOROLA INC·Filed 1997·Granted Sep 28, 1999·72 cites·15 claims
- 3288US5757695AMram with aligned magnetic vectorsMOTOROLA INC·Filed 1997·Granted May 26, 1998·72 cites·7 claims
- 3388US5748524AMRAM with pinned endsMOTOROLA INC·Filed 1996·Granted May 5, 1998·72 cites·16 claims
- 3487US5978257AMulti-layer magnet tunneling junction memory cellsMOTOROLA INC·Filed 1998·Granted Nov 2, 1999·59 cites·5 claims
- 3587US5818316ANonvolatile programmable switchMOTOROLA INC·Filed 1997·Granted Oct 6, 1998·72 cites·22 claims
- 3686US5768183AMulti-layer magnetic memory cells with improved switching characteristicsMOTOROLA INC·Filed 1996·Granted Jun 16, 1998·61 cites·13 claims
- 3781US5412224AField effect transistor with non-linear transfer characteristicMOTOROLA INC·Filed 1992·Granted May 2, 1995·49 cites·10 claims
- 3880US6512689B1MRAM without isolation devicesMOTOROLA INC·Filed 2002·Granted Jan 28, 2003·29 cites·17 claims
- 3980US5081511AHeterojunction field effect transistor with monolayers in channel regionMOTOROLA INC·Filed 1990·Granted Jan 14, 1992·45 cites·8 claims
- 4079US6812040B2Method of fabricating a self-aligned via contact for a magnetic memory elementFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Nov 2, 2004·27 cites·32 claims
- 4179US5742082AStable FET with shielding region in the substrateMOTOROLA INC·Filed 1996·Granted Apr 21, 1998·46 cites·14 claims
- 4275US5659180AHeterojunction interband tunnel diodes with improved P/V current ratiosMOTOROLA INC·Filed 1995·Granted Aug 19, 1997·41 cites·33 claims
- 4373US5703805AMethod for detecting information stored in a MRAM cell having two magnetic layers in different thicknessesMOTOROLA INC·Filed 1996·Granted Dec 30, 1997·33 cites·25 claims
- 4471US5774394AMagnetic memory cell with increased GMR ratioMOTOROLA INC·Filed 1997·Granted Jun 30, 1998·54 cites·17 claims
- 4570US5172384ALow threshold current laserMOTOROLA INC·Filed 1991·Granted Dec 15, 1992·28 cites·19 claims
- 4669US5349214AComplementary heterojunction deviceMOTOROLA INC·Filed 1993·Granted Sep 20, 1994·26 cites·16 claims
- 4768US6888743B2MRAM architectureFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 3, 2005·15 cites·23 claims
- 4868US6579625B1Magnetoelectronics element having a magnetic layer formed of multiple sub-element layersMOTOROLA INC·Filed 2000·Granted Jun 17, 2003·12 cites·18 claims
- 4968US5828598AMRAM with high GMR ratioMOTOROLA INC·Filed 1997·Granted Oct 27, 1998·28 cites·24 claims
- 5068US5745408AMulti-layer magnetic memory cell with low switching currentMOTOROLA INC·Filed 1996·Granted Apr 28, 1998·27 cites·16 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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