Inventor · disambiguated record
Mark Durlam
Also filed as: DURLAM MARK · DURLAM MARK A
57 granted patents·1 pending application·3,614 citations·filing 1994–2006
99Inventor score
Top patents by PatentIndex Score
58 records- 0199US6331943B1MTJ MRAM series-parallel architectureMOTOROLA INC·Filed 2000·Granted Dec 18, 2001·300 cites·23 claims
- 0299US6211090B1Method of fabricating flux concentrating layer for use with magnetoresistive random access memoriesMOTOROLA INC·Filed 2000·Granted Apr 3, 2001·312 cites·20 claims
- 0398US6835423B2Method of fabricating a magnetic element with insulating veilsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 28, 2004·141 cites·10 claims
- 0498US6174737B1Magnetic random access memory and fabricating method thereofMOTOROLA INC·Filed 1999·Granted Jan 16, 2001·270 cites·7 claims
- 0598US5966323ALow switching field magnetoresistive tunneling junction for high density arraysMOTOROLA INC·Filed 1997·Granted Oct 12, 1999·242 cites·12 claims
- 0698US5940319AMagnetic random access memory and fabricating method thereofMOTOROLA INC·Filed 1998·Granted Aug 17, 1999·313 cites·11 claims
- 0797US5861328AMethod of fabricating GMR devicesMOTOROLA INC·Filed 1996·Granted Jan 19, 1999·227 cites·30 claims
- 0896US6153443AMethod of fabricating a magnetic random access memoryMOTOROLA INC·Filed 1998·Granted Nov 28, 2000·164 cites·22 claims
- 0995US7262069B23-D inductor and transformer devices in MRAM embedded integrated circuitsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 28, 2007·38 cites·10 claims
- 1095US5659499AMagnetic memory and method thereforMOTOROLA INC·Filed 1995·Granted Aug 19, 1997·130 cites·3 claims
- 1194US6365419B1High density MRAM cell arrayMOTOROLA INC·Filed 2000·Granted Apr 2, 2002·101 cites·27 claims
- 1293US6544801B1Method of fabricating thermally stable MTJ cell and apparatusMOTOROLA INC·Filed 2000·Granted Apr 8, 2003·99 cites·50 claims
- 1393US5902690AStray magnetic shielding for a non-volatile MRAMMOTOROLA INC·Filed 1997·Granted May 11, 1999·149 cites·15 claims
- 1492US6233172B1Magnetic element with dual magnetic states and fabrication method thereofMOTOROLA INC·Filed 1999·Granted May 15, 2001·205 cites·19 claims
- 1592US5804458AMethod of fabricating spaced apart submicron magnetic memory cellsMOTOROLA INC·Filed 1996·Granted Sep 8, 1998·78 cites·27 claims
- 1690US5699293AMethod of operating a random access memory device having a plurality of pairs of memory cells as the memory deviceMOTOROLA INC·Filed 1996·Granted Dec 16, 1997·80 cites·15 claims
- 1789US6518071B1Magnetoresistive random access memory device and method of fabrication thereofMOTOROLA INC·Filed 2002·Granted Feb 11, 2003·49 cites·44 claims
- 1888US6909631B2MRAM and methods for reading the MRAMFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 21, 2005·47 cites·31 claims
- 1988US6784510B1Magnetoresistive random access memory device structuresFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·44 cites·18 claims
- 2088US5959880ALow aspect ratio magnetoresistive tunneling junctionMOTOROLA INC·Filed 1997·Granted Sep 28, 1999·72 cites·15 claims
- 2186US5768183AMulti-layer magnetic memory cells with improved switching characteristicsMOTOROLA INC·Filed 1996·Granted Jun 16, 1998·61 cites·13 claims
- 2284US7747926B2Methods and apparatus for a memory device with self-healing reference bitsEVERSPIN TECHNOLOGIES INC·Filed 2006·Granted Jun 29, 2010·16 cites·18 claims
- 2384US6911156B2Methods for fabricating MRAM device structuresFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 28, 2005·28 cites·27 claims
- 2482US6903964B2MRAM architecture with electrically isolated read and write circuitryFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 7, 2005·27 cites·9 claims
- 2581US7264985B2Passive elements in MRAM embedded integrated circuitsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 4, 2007·9 cites·3 claims
- 2681US6760266B2Sense amplifier and method for performing a read operation in a MRAMFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jul 6, 2004·28 cites·19 claims
- 2780US7510883B2Magnetic tunnel junction temperature sensors and methodsEVERSPIN TECHNOLOGIES INC·Filed 2005·Granted Mar 31, 2009·12 cites·7 claims
- 2880US6881351B2Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devicesFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Apr 19, 2005·27 cites·16 claims
- 2980US6512689B1MRAM without isolation devicesMOTOROLA INC·Filed 2002·Granted Jan 28, 2003·29 cites·17 claims
- 3079US6936763B2Magnetic shielding for electronic circuits which include magnetic materialsFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Aug 30, 2005·26 cites·23 claims
- 3179US6812040B2Method of fabricating a self-aligned via contact for a magnetic memory elementFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Nov 2, 2004·27 cites·32 claims
- 3278US7239543B2Magnetic tunnel junction current sensorsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 3, 2007·11 cites·20 claims
- 3378US6885074B2Cladded conductor for use in a magnetoelectronics device and method for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Apr 26, 2005·21 cites·15 claims
- 3477US7105363B2Cladded conductor for use in a magnetoelectronics device and method for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 12, 2006·6 cites·19 claims
- 3574US6798004B1Magnetoresistive random access memory devices and methods for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Sep 28, 2004·16 cites·16 claims
- 3673US7511990B2Magnetic tunnel junction temperature sensorsEVERSPIN TECHNOLOGIES INC·Filed 2005·Granted Mar 31, 2009·8 cites·14 claims
- 3773US5703805AMethod for detecting information stored in a MRAM cell having two magnetic layers in different thicknessesMOTOROLA INC·Filed 1996·Granted Dec 30, 1997·33 cites·25 claims
- 3871US7087972B1Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 8, 2006·5 cites·20 claims
- 3969US7324369B2MRAM embedded smart power integrated circuitsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 29, 2008·4 cites·14 claims
- 4068US6888743B2MRAM architectureFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 3, 2005·15 cites·23 claims
- 4167US7144744B2Magnetoresistive random access memory device structures and methods for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Dec 5, 2006·17 cites·16 claims
- 4267US6890770B2Magnetoresistive random access memory device structures and methods for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted May 10, 2005·10 cites·18 claims
- 4366US6943038B2Method for fabricating a flux concentrating system for use in a magnetoelectronics deviceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 13, 2005·13 cites·19 claims
- 4466US5734606AMulti-piece cell and a MRAM array including the cellMOTOROLA INC·Filed 1996·Granted Mar 31, 1998·24 cites·10 claims
- 4564US7271011B2Methods of implementing magnetic tunnel junction current sensorsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 18, 2007·2 cites·15 claims
- 4663US7031183B2MRAM device integrated with other types of circuitryFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·14 cites·19 claims
- 4762US7432150B2Method of manufacturing a magnetoelectronic deviceEVERSPIN TECHNOLOGIES INC·Filed 2006·Granted Oct 7, 2008·2 cites·20 claims
- 4860US5831920AGMR device having a sense amplifier protected by a circuit for dissipating electric chargesMOTOROLA INC·Filed 1997·Granted Nov 3, 1998·18 cites·20 claims
- 4955US6912107B2Magnetic element with insulating veils and fabricating method thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 28, 2005·4 cites·7 claims
- 5050US7476329B2Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devicesEVERSPIN TECHNOLOGIES INC·Filed 2005·Granted Jan 13, 2009·0 cites·15 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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