Inventor · disambiguated record
Jenn Hwa Huang
Also filed as: HUANG JENN-HWA
51 granted patents·1,846 citations·filing 1989–2020
99Inventor score
Top patents by PatentIndex Score
51 records- 0199US6307169B1Micro-electromechanical switchMOTOROLA INC·Filed 2000·Granted Oct 23, 2001·237 cites·18 claims
- 0298US6384353B1Micro-electromechanical system deviceMOTOROLA INC·Filed 2000·Granted May 7, 2002·358 cites·20 claims
- 0397US9799760B2Semiconductor device with selectively etched surface passivationFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 24, 2017·17 cites·18 claims
- 0497US8304271B2Integrated circuit having a bulk acoustic wave device and a transistorHUANG JENN HWA·Filed 2009·Granted Nov 6, 2012·114 cites·19 claims
- 0596US6156611AMethod of fabricating vertical FET with sidewall gate electrodeMOTOROLA INC·Filed 1998·Granted Dec 5, 2000·194 cites·8 claims
- 0695US6441449B1MEMS variable capacitor with stabilized electrostatic drive and method thereforMOTOROLA INC·Filed 2001·Granted Aug 27, 2002·82 cites·18 claims
- 0794US6794101B2Micro-electro-mechanical device and method of makingMOTOROLA INC·Filed 2002·Granted Sep 21, 2004·53 cites·13 claims
- 0892US5480829AMethod of making a III-V complementary heterostructure device with compatible non-gold ohmic contactsMOTOROLA INC·Filed 1993·Granted Jan 2, 1996·93 cites·12 claims
- 0991US9871107B2Device with a conductive feature formed over a cavity and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 16, 2018·8 cites·15 claims
- 1087US10644142B2Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication thereforNXP USA INC·Filed 2017·Granted May 5, 2020·4 cites·13 claims
- 1187US5606184AHeterostructure field effect device having refractory ohmic contact directly on channel layer and method for makingMOTOROLA INC·Filed 1995·Granted Feb 25, 1997·70 cites·20 claims
- 1286US8946776B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Feb 3, 2015·6 cites·18 claims
- 1386US8836133B2Chip-level humidity protectionHUANG JENN HWA·Filed 2012·Granted Sep 16, 2014·11 cites·20 claims
- 1486US6362018B1Method for fabricating MEMS variable capacitor with stabilized electrostatic driveMOTOROLA INC·Filed 2000·Granted Mar 26, 2002·28 cites·6 claims
- 1586US6309918B1Manufacturable GaAs VFET processMOTOROLA INC·Filed 1998·Granted Oct 30, 2001·73 cites·18 claims
- 1685US10741496B2Semiconductor devices with a protection layer and methods of fabricationNXP USA INC·Filed 2018·Granted Aug 11, 2020·4 cites·21 claims
- 1785US5060031AComplementary heterojunction field effect transistor with an anisotype N+ ga-channel devicesMOTOROLA INC·Filed 1990·Granted Oct 22, 1991·63 cites·12 claims
- 1884US5700703AMethod of fabricating buried control elements in semiconductor devicesMOTOROLA INC·Filed 1996·Granted Dec 23, 1997·77 cites·12 claims
- 1982US5444016AMethod of making ohmic contacts to a complementary III-V semiconductor deviceFiled 1993·Granted Aug 22, 1995·51 cites·6 claims
- 2081US10355085B1Semiconductor devices with regrown contacts and methods of fabricationNXP USA INC·Filed 2017·Granted Jul 16, 2019·3 cites·20 claims
- 2179US10403718B2Semiconductor devices with regrown contacts and methods of fabricationNXP USA INC·Filed 2017·Granted Sep 3, 2019·3 cites·24 claims
- 2279US6091621ANon-volatile multistate memory cell using a ferroelectric gate fetMOTOROLA INC·Filed 1997·Granted Jul 18, 2000·44 cites·6 claims
- 2379US5742082AStable FET with shielding region in the substrateMOTOROLA INC·Filed 1996·Granted Apr 21, 1998·46 cites·14 claims
- 2478US9425267B2Transistor with charge enhanced field plate structure and methodFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 23, 2016·4 cites·24 claims
- 2578US9153448B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2015·Granted Oct 6, 2015·2 cites·20 claims
- 2675US8653558B2Semiconductor device and method of makingGREEN BRUCE M·Filed 2011·Granted Feb 18, 2014·4 cites·20 claims
- 2775US6606017B1Switchable and tunable coplanar waveguide filtersMOTOROLA INC·Filed 2000·Granted Aug 12, 2003·11 cites·19 claims
- 2874US9601638B2GaN-on-Si switch devicesHUANG JENN HWA·Filed 2011·Granted Mar 21, 2017·3 cites·14 claims
- 2973US9111868B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Aug 18, 2015·2 cites·17 claims
- 3070US10957790B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2018·Granted Mar 23, 2021·1 cites·19 claims
- 3170US5116774AHeterojunction method and structureMOTOROLA INC·Filed 1991·Granted May 26, 1992·29 cites·12 claims
- 3267US6479843B2Single supply HFET with temperature compensationMOTOROLA INC·Filed 2000·Granted Nov 12, 2002·15 cites·14 claims
- 3365US6057566ASemiconductor deviceMOTOROLA INC·Filed 1998·Granted May 2, 2000·24 cites·19 claims
- 3464US5739557ARefractory gate heterostructure field effect transistorMOTOROLA INC·Filed 1995·Granted Apr 14, 1998·26 cites·16 claims
- 3563US8319310B2Field effect transistor gate process and structureHUANG JENN HWA·Filed 2009·Granted Nov 27, 2012·2 cites·20 claims
- 3662US7868393B2Space efficient integrated circuit with passive devicesFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jan 11, 2011·2 cites·20 claims
- 3760US10971613B2Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication thereforNXP USA INC·Filed 2020·Granted Apr 6, 2021·0 cites·21 claims
- 3855US9893156B2Segmented field plate structureNXP USA INC·Filed 2017·Granted Feb 13, 2018·0 cites·19 claims
- 3952US9972703B2Transistor with charge enhanced field plate structure and methodFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted May 15, 2018·0 cites·10 claims
- 4052US6262451B1Electrode structure for transistors, non-volatile memories and the likeMOTOROLA INC·Filed 1997·Granted Jul 17, 2001·14 cites·12 claims
- 4151US9647075B2Segmented field plate structureFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 9, 2017·0 cites·17 claims
- 4250US10692976B2GaN-on-Si switch devicesNXP USA INC·Filed 2017·Granted Jun 23, 2020·0 cites·16 claims
- 4349US4914049AMethod of fabricating a heterojunction bipolar transistorMOTOROLA INC·Filed 1989·Granted Apr 3, 1990·12 cites·14 claims
- 4448US11784236B2Methods for forming semiconductor devices using sacrificial capping and insulation layersNXP USA INC·Filed 2020·Granted Oct 10, 2023·0 cites·11 claims
- 4548US6459344B1Switch assembly and method of forming the sameMOTOROLA INC·Filed 2001·Granted Oct 1, 2002·4 cites·18 claims
- 4646US5880029AMethod of passivating semiconductor devices and the passivated devicesMOTOROLA INC·Filed 1996·Granted Mar 9, 1999·12 cites·12 claims
- 4745US5831295ACurrent confinement via defect generator and hetero-interface interactionMOTOROLA INC·Filed 1995·Granted Nov 3, 1998·12 cites·6 claims
- 4843US5719088AMethod of fabricating semiconductor devices with a passivated surfaceMOTOROLA INC·Filed 1995·Granted Feb 17, 1998·11 cites·18 claims
- 4941US5733827AMethod of fabricating semiconductor devices with a passivated surfaceMOTOROLA INC·Filed 1995·Granted Mar 31, 1998·8 cites·22 claims
- 5038US5411903ASelf-aligned complementary HFETSMOTOROLA INC·Filed 1993·Granted May 2, 1995·6 cites·8 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →