Inventor · disambiguated record
Yoshiyasu Ishihama
Also filed as: ISHIHAMA YOSHIYASU
8 granted patents·4 pending applications·120 citations·filing 1998–2011
87Inventor score
Top patents by PatentIndex Score
12 records- 0180US6666921B2Chemical vapor deposition apparatus and chemical vapor deposition methodJAPAN PIONICS·Filed 2002·Granted Dec 23, 2003·23 cites·16 claims
- 0272US8679254B2Vapor phase epitaxy apparatus of group III nitride semiconductorISO KENJI·Filed 2011·Granted Mar 25, 2014·1 cites·7 claims
- 0371US6592674B2Chemical vapor deposition apparatus and chemical vapor deposition methodJAPAN PIONICS·Filed 2001·Granted Jul 15, 2003·11 cites·12 claims
- 0471US6155540AApparatus for vaporizing and supplying a materialJAPAN PIONICS·Filed 1998·Granted Dec 5, 2000·36 cites·10 claims
- 0568US8277893B2Chemical vapor deposition apparatusOHORI TATSUYA·Filed 2009·Granted Oct 2, 2012·2 cites·20 claims
- 0665US6106898AProcess for preparing nitride filmJAPAN PIONICS·Filed 1998·Granted Aug 22, 2000·27 cites·10 claims
- 0764US6100415APurified alkoxide and process for purifying crude alkoxideJAPAN PIONICS·Filed 1999·Granted Aug 8, 2000·10 cites·10 claims
- 0862US6461407B2Method and apparatus for supplying liquid raw materialJAPAN PIONICS·Filed 2000·Granted Oct 8, 2002·10 cites·13 claims
- 0950US2007051316A1Chemical vapor deposition apparatusOHORI TATSUYA·Filed 2006·Application pending·0 cites
- 1040US2010229794A1Vapor phase epitaxy apparatus of group iii nitride semiconductorISO KENJI·Filed 2010·Application pending·0 cites
- 1134US2003015137A1Chemical vapor deposition apparatus and chemical vapor deposition methodJAPAN PIONICS·Filed 2002·Application pending·0 cites
- 1233US2010307418A1Vapor phase epitaxy apparatus of group iii nitride semiconductorJAPAN PIONICS·Filed 2010·Application pending·0 cites
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