Inventor · disambiguated record
Thomas Happ
Also filed as: HAPP THOMAS · HAPP THOMAS D
137 granted patents·36 pending applications·2,471 citations·filing 2003–2023
99Inventor score
Files withQIMONDA AG40INFINEON TECHNOLOGIES AG39QIMONDA NORTH AMERICA CORP26HAPP THOMAS17GIESECKE & DEVRIENT CURRENCY TECHNOLOGY GMBH10
Top patents by PatentIndex Score
173 records- 0199US7214958B2Phase change memory cell with high read margin at low power operationINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 8, 2007·272 cites·10 claims
- 0299US7166533B2Phase change memory cell defined by a pattern shrink material processINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 23, 2007·291 cites·38 claims
- 0398US7515461B2Current compliant sensing architecture for multilevel phase change memoryMACRONIX INT CO LTD·Filed 2007·Granted Apr 7, 2009·93 cites·20 claims
- 0497US7460394B2Phase change memory having temperature budget sensorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 2, 2008·59 cites·25 claims
- 0597US7417245B2Phase change memory having multilayer thermal insulationINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 26, 2008·59 cites·26 claims
- 0697US7405418B2Memory device electrode with a surface structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 29, 2008·81 cites·18 claims
- 0796US7372725B2Integrated circuit having resistive memoryINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 13, 2008·54 cites·37 claims
- 0896US7324365B2Phase change memory fabricated using self-aligned processingINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jan 29, 2008·52 cites·19 claims
- 0996US7215564B2Semiconductor memory component in cross-point architectureINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 8, 2007·56 cites·18 claims
- 1095US8208294B2Resistive memory cell accessed using two bit linesHAPP THOMAS·Filed 2010·Granted Jun 26, 2012·21 cites·25 claims
- 1195US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 1295US7545668B2Mushroom phase change memory having a multilayer electrodeQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jun 9, 2009·36 cites·14 claims
- 1395US7453081B2Phase change memory cell including nanocomposite insulatorQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 18, 2008·37 cites·39 claims
- 1495US7426134B2Sense circuit for resistive memoryINFINEON TECHNOLOGIES CORP·Filed 2006·Granted Sep 16, 2008·105 cites·24 claims
- 1594US10417856B2Device and method for verifying feature substancesGIESECKE & DEVRIENT GMBH·Filed 2015·Granted Sep 17, 2019·6 cites·18 claims
- 1694US7932507B2Current constricting phase change memory element structureIBM·Filed 2010·Granted Apr 26, 2011·14 cites·14 claims
- 1794US7796424B2Memory device having drift compensated read operation and associated methodQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Sep 14, 2010·37 cites·10 claims
- 1894US7619917B2Memory cell with trigger elementQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 17, 2009·34 cites·31 claims
- 1994US7405964B2Integrated circuit to identify read disturb condition in memory cellQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Jul 29, 2008·35 cites·23 claims
- 2093US9111609B2Concentric phase change memory elementHAPP THOMAS D·Filed 2012·Granted Aug 18, 2015·11 cites·9 claims
- 2193US7838860B2Integrated circuit including vertical diodeQIMONDA AG·Filed 2007·Granted Nov 23, 2010·22 cites·35 claims
- 2293US7623401B2Semiconductor device including multi-bit memory cells and a temperature budget sensorQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 24, 2009·31 cites·35 claims
- 2392US7495946B2Phase change memory fabricated using self-aligned processingINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 24, 2009·28 cites·13 claims
- 2491US7601995B2Integrated circuit having resistive memory cellsINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 13, 2009·19 cites·13 claims
- 2591US7593255B2Integrated circuit for programming a memory elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Sep 22, 2009·24 cites·22 claims
- 2690US7869257B2Integrated circuit including diode memory cellsQIMONDA AG·Filed 2007·Granted Jan 11, 2011·23 cites·27 claims
- 2790US7539050B2Resistive memory including refresh operationQIMONDA NORTH AMERICA CORP·Filed 2006·Granted May 26, 2009·23 cites·30 claims
- 2890US7348590B2Phase change memory cell with high read margin at low power operationINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 25, 2008·24 cites·16 claims
- 2990US7319235B2Resistive semiconductor element based on a solid-state ion conductorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 15, 2008·23 cites·13 claims
- 3090US7023008B1Resistive memory elementINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 4, 2006·51 cites·21 claims
- 3189US7719886B2Multi-level resistive memory cell using different crystallization speedsQIMONDA NORTH AMERICA CORP·Filed 2007·Granted May 18, 2010·20 cites·18 claims
- 3289US7714315B2Thermal isolation of phase change memory cellsQIMONDA NORTH AMERICA CORP·Filed 2006·Granted May 11, 2010·19 cites·16 claims
- 3389US7615770B2Integrated circuit having an insulated memoryINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 10, 2009·24 cites·5 claims
- 3488US8779495B2Stacked SONOS memoryHAPP THOMAS·Filed 2007·Granted Jul 15, 2014·17 cites·15 claims
- 3588US7679980B2Resistive memory including selective refresh operationQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Mar 16, 2010·18 cites·18 claims
- 3688US7457146B2Memory cell programmed using a temperature controlled set pulseQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 25, 2008·20 cites·23 claims
- 3787US7929336B2Integrated circuit including a memory element programmed using a seed pulseQIMONDA AG·Filed 2008·Granted Apr 19, 2011·21 cites·16 claims
- 3887US7910911B2Phase change memory with tapered heaterIBM·Filed 2009·Granted Mar 22, 2011·12 cites·10 claims
- 3987US7778070B2Memory with dynamic redundancy configurationQIMONDA AG·Filed 2008·Granted Aug 17, 2010·17 cites·9 claims
- 4087US7745807B2Current constricting phase change memory element structureIBM·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 4187US7436695B2Resistive memory including bipolar transistor access devicesINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 14, 2008·20 cites·35 claims
- 4286US7646632B2Integrated circuit for setting a memory cell based on a reset current distributionQIMONDA AG·Filed 2007·Granted Jan 12, 2010·21 cites·23 claims
- 4386US7362608B2Phase change memory fabricated using self-aligned processingINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 22, 2008·20 cites·22 claims
- 4486US7113424B2Energy adjusted write pulses in phase-change memoriesINFINEON TECHNOLOGIES AG·Filed 2004·Granted Sep 26, 2006·43 cites·19 claims
- 4585US7973384B2Phase change memory cell including multiple phase change material portionsQIMONDA AG·Filed 2005·Granted Jul 5, 2011·13 cites·20 claims
- 4685US7692175B2Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layersQIMONDA AG·Filed 2005·Granted Apr 6, 2010·6 cites·4 claims
- 4784US7332377B2Manufacturing method with self-aligned arrangement of solid body electrolyte memory cells of minimum structure sizeINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 19, 2008·13 cites·21 claims
- 4883US8030634B2Memory array with diode driver and method for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Oct 4, 2011·8 cites·9 claims
- 4983US7852657B2Multiple write configurations for a memory cellQIMONDA AG·Filed 2007·Granted Dec 14, 2010·14 cites·13 claims
- 5083US7646625B2Conditioning operations for memory cellsQIMONDA AG·Filed 2007·Granted Jan 12, 2010·14 cites·27 claims
Showing the top 50 of 173 patent records by PatentIndex Score.
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