Inventor · disambiguated record
Hirobumi Nagaoka
Also filed as: NAGAOKA HIROBUMI
6 granted patents·3 pending applications·50 citations·filing 2005–2021
81Inventor score
Top patents by PatentIndex Score
9 records- 0190US8142566B2Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrateKIYOMI KAZUMASA·Filed 2005·Granted Mar 27, 2012·35 cites·9 claims
- 0288US9518337B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2015·Granted Dec 13, 2016·4 cites·20 claims
- 0383US9096945B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2012·Granted Aug 4, 2015·4 cites·10 claims
- 0480US7794541B2Gallium nitride-based material and method of manufacturing the sameUNIV TOHOKU·Filed 2007·Granted Sep 14, 2010·7 cites·18 claims
- 0574US2022033992A1Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2021·Application pending·0 cites
- 0666US11162190B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2019·Granted Nov 2, 2021·0 cites·19 claims
- 0758US10526726B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2016·Granted Jan 7, 2020·0 cites·22 claims
- 0844US2010162945A1Gallium nitride-based material and method of manufacturing the sameUNIV TOHOKU·Filed 2010·Application pending·0 cites
- 0944US2010140536A1Gallium nitride-based materialUNIV TOHOKU·Filed 2010·Application pending·0 cites
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