Inventor · disambiguated record
Jean-Michel Reynes
Also filed as: REYNES JEAN MICHEL · REYNES JEAN-MICHEL FRANCIS
20 granted patents·1 pending application·88 citations·filing 1996–2017
92Inventor score
Files withREYNES JEAN MICHEL7FREESCALE SEMICONDUCTOR INC5AGILE POWER SWITCH 3D INTEGRATION APSI3D4MOTOROLA INC3BERNOUX BEATRICE1
Top patents by PatentIndex Score
21 records- 0165US6773977B1Method of forming a diode for integration with a semiconductor device and method of forming a transistor device having an integrated diodeFREESCALE SEMICONDUCTOR INC·Filed 2000·Granted Aug 10, 2004·13 cites·8 claims
- 0264US8779794B2Transistor power switch device and method of measuring its characteristicsBERNOUX BEATRICE·Filed 2009·Granted Jul 15, 2014·4 cites·14 claims
- 0364US7955929B2Method of forming a semiconductor device having an active area and a termination areaFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 7, 2011·3 cites·20 claims
- 0460US8217448B2Semiconductor device and method of forming a semiconductor deviceSTEFANOV EVGUENIY·Filed 2007·Granted Jul 10, 2012·4 cites·20 claims
- 0557US8604560B2Power MOS transistor deviceREYNES JEAN MICHEL·Filed 2008·Granted Dec 10, 2013·2 cites·20 claims
- 0656US8188539B2Field-effect semiconductor device and method of forming the sameREYNES JEAN-MICHEL·Filed 2005·Granted May 29, 2012·3 cites·20 claims
- 0756US5798475ASemiconductor fuse device and method for forming a semiconductor fuse deviceMOTOROLA INC·Filed 1996·Granted Aug 25, 1998·25 cites·13 claims
- 0852US7432145B2Power semiconductor device with a base region and method of manufacturing sameFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 7, 2008·8 cites·7 claims
- 0950US5747371AMethod of manufacturing vertical MOSFETMOTOROLA INC·Filed 1996·Granted May 5, 1998·15 cites·20 claims
- 1044US7800135B2Power semiconductor device and method of manufacturing a power semiconductor deviceREYNES JEAN-MICHEL·Filed 2005·Granted Sep 21, 2010·1 cites·10 claims
- 1142US8530953B2Power MOS transistor device and switch apparatus comprising the sameREYNES JEAN MICHEL·Filed 2008·Granted Sep 10, 2013·0 cites·20 claims
- 1237US8779465B2Semiconductor device and method of forming a semiconductor deviceREYNES JEAN-MICHEL·Filed 2006·Granted Jul 15, 2014·0 cites·20 claims
- 1337US8018018B2Temperature sensing deviceFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 13, 2011·0 cites·17 claims
- 1435US8592894B2Method of forming a power semiconductor device and power semiconductor deviceREYNES JEAN MICHEL·Filed 2008·Granted Nov 26, 2013·0 cites·20 claims
- 1534US5814876ASemiconductor fuse devicesMOTOROLA INC·Filed 1997·Granted Sep 29, 1998·10 cites·8 claims
- 1629US9660044B2Power field effect transistor, a power field effect transistor device and a method of manufacturing a power field effect transistorREYNES JEAN MICHEL·Filed 2013·Granted May 23, 2017·0 cites·11 claims
- 1726US2021289666A1Heat sink structureAGILE POWER SWITCH 3D INTEGRATION APSI3D·Filed 2017·Application pending·0 cites
- 1825US10847494B2Method of determining thermal impedance of a sintering layer and a measurement systemAGILE POWER SWITCH 3D INTEGRATION APSI3D·Filed 2017·Granted Nov 24, 2020·0 cites·13 claims
- 1924US8004049B2Power semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 23, 2011·0 cites·19 claims
- 2022US10714428B2Semiconductor power device and a method of assembling a semiconductor power deviceAGILE POWER SWITCH 3D—INTEGRATION APSI3D·Filed 2015·Granted Jul 14, 2020·0 cites·8 claims
- 2121US10332828B2Semiconductor power device comprising additional tracks and method of manufacturing the semiconductor power deviceAGILE POWER SWITCH 3D—INTEGRATION APSI3D·Filed 2015·Granted Jun 25, 2019·0 cites·20 claims
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