Inventor · disambiguated record
Chang-Rong Wu
Also filed as: WU CHANG-RONG
34 granted patents·9 pending applications·181 citations·filing 2002–2014
97Inventor score
Top patents by PatentIndex Score
43 records- 0181US8901527B2Resistive random access memory structure with tri-layer resistive stackHSIEH CHUN-I·Filed 2010·Granted Dec 2, 2014·4 cites·6 claims
- 0281US8395139B11T1R resistive memory device and fabrication method thereofHO HSIN-JUNG·Filed 2011·Granted Mar 12, 2013·9 cites·11 claims
- 0381US6737334B2Method of fabricating a shallow trench isolation structureNANYA TECHNOLOGY CORP·Filed 2002·Granted May 18, 2004·26 cites·19 claims
- 0471US6821872B1Method of making a bit line contact deviceNANYA TECHNOLOGY CORP·Filed 2004·Granted Nov 23, 2004·19 cites·8 claims
- 0568US7375017B2Method for fabricating semiconductor device having stacked-gate structureNANYA TECHNOLOGY CORP·Filed 2006·Granted May 20, 2008·3 cites·9 claims
- 0667US8999733B2Method of forming RRAM structureNANYA TECHNOLOGY CORP·Filed 2014·Granted Apr 7, 2015·1 cites·5 claims
- 0765US7154159B2Trench isolation structure and method of forming the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Dec 26, 2006·12 cites·19 claims
- 0865US6770563B2Process of forming a bottle-shaped trenchNANYA TECHNOLOGY CORP·Filed 2003·Granted Aug 3, 2004·11 cites·12 claims
- 0964US8395209B1Single-sided access device and fabrication method thereofHO HSIN-JUNG·Filed 2011·Granted Mar 12, 2013·2 cites·7 claims
- 1063US7101777B2Methods for manufacturing stacked gate structure and field effect transistor provided with the sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Sep 5, 2006·11 cites·16 claims
- 1163US6833311B2Manufacturing method for a shallow trench isolation region with high aspect ratioNANYA TECHNOLOGY CORP·Filed 2003·Granted Dec 21, 2004·11 cites·26 claims
- 1262US9070871B2Method for fabricating magnetoresistive random access memory elementNANYA TECHNOLOGY CORP·Filed 2014·Granted Jun 30, 2015·0 cites·10 claims
- 1361US6960530B2Method of reducing the aspect ratio of a trenchNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 1, 2005·8 cites·20 claims
- 1461US6858516B2Manufacturing method of a high aspect ratio shallow trench isolation regionNANYA TECHNOLOGY CORP·Filed 2002·Granted Feb 22, 2005·10 cites·15 claims
- 1561US6794266B2Method for forming a trench isolation structureNANYA TECHNOLOGY CORP·Filed 2002·Granted Sep 21, 2004·10 cites·27 claims
- 1660US8916392B2Magnetoresistive random access memory element and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2013·Granted Dec 23, 2014·0 cites·10 claims
- 1760US8487290B2RRAM with improved resistance transformation characteristic and method of making the sameHSIEH CHUN-I·Filed 2008·Granted Jul 16, 2013·2 cites·16 claims
- 1858US6828239B2Method of forming a high aspect ratio shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2002·Granted Dec 7, 2004·11 cites·11 claims
- 1957US8535954B2Magnetoresistive random access memory element and fabrication method thereofHSIEH CHUN-I·Filed 2012·Granted Sep 17, 2013·0 cites·10 claims
- 2055US8089060B2Non-volatile memory cell and fabrication method thereofHSIEH CHUN-I·Filed 2009·Granted Jan 3, 2012·1 cites·29 claims
- 2155US6743728B2Method for forming shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2002·Granted Jun 1, 2004·5 cites·27 claims
- 2254US6693006B2Method for increasing area of a trench capacitorNANYA TECHNOLOGY CORP·Filed 2002·Granted Feb 17, 2004·5 cites·6 claims
- 2352US8149614B2Magnetoresistive random access memory element and fabrication method thereofHSIEH CHUN-I·Filed 2010·Granted Apr 3, 2012·0 cites·11 claims
- 2452US6825094B2Method for increasing capacitance of deep trench capacitorsNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 30, 2004·4 cites·17 claims
- 2551US7943917B2Non-volatile memory cell and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2009·Granted May 17, 2011·0 cites·8 claims
- 2649US6586324B2Method of forming interconnectsNANYA TECHNOLOGY CORP·Filed 2002·Granted Jul 1, 2003·4 cites·17 claims
- 2747US7232718B2Method for forming a deep trench capacitor buried plateNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 19, 2007·4 cites·19 claims
- 2847US6861333B2Method of reducing trench aspect ratioNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 1, 2005·3 cites·20 claims
- 2946US6900118B2Method for preventing contact defects in interlayer dielectric layerNANYA TECHNOLOGY CORP·Filed 2003·Granted May 31, 2005·1 cites·17 claims
- 3045US7022603B2Method for fabricating semiconductor device having stacked-gate structureNANYA TECHNOLOGY CORP·Filed 2003·Granted Apr 4, 2006·2 cites·10 claims
- 3144US2010021626A1Method of fabricating rramHSIEH CHUN-I·Filed 2008·Application pending·0 cites
- 3244US2009017604A1Method for fabricating a semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 3343US6794270B2Method for shallow trench isolation fabrication and partial oxide layer removalNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 21, 2004·1 cites·14 claims
- 3441US7138338B2Method and composite hard mask for forming deep trenches in a semiconductor substrateNANYA TECHNOLOGY CORP·Filed 2004·Granted Nov 21, 2006·1 cites·6 claims
- 3540US2006049132A1Etchant composition and the use thereofNANYA TECHNOLOGY CORP·Filed 2004·Application pending·0 cites
- 3637US2009108319A1Dram stack capacitor and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2008·Application pending·0 cites
- 3737US2011084248A1Cross point memory array devicesNANYA TECHNOLOGY CORP·Filed 2009·Application pending·0 cites
- 3836US6958283B2Method for fabricating trench isolationNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 25, 2005·0 cites·44 claims
- 3935US2005001286A1Memory device with vertical transistors and deep trench capacitors and manufacturing method thereofFiled 2003·Application pending·0 cites
- 4035US2003143817A1Method of forming shallow trench isolationFiled 2002·Application pending·0 cites
- 4135US2005124127A1Method for manufacturing gate structure for use in semiconductor deviceFiled 2003·Application pending·0 cites
- 4232US7101802B2Method for forming bottle-shaped trenchNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 5, 2006·0 cites·29 claims
- 4331US2005250345A1Method for fabricating a bottle-shaped deep trenchSUN CHIEN-JUNG·Filed 2004·Application pending·0 cites
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