Inventor · disambiguated record
Derryl D. J. Allman
Also filed as: ALLMAN DERRYL · ALLMAN DERRYL D J
85 granted patents·6 pending applications·2,582 citations·filing 1987–2021
99Inventor score
Top patents by PatentIndex Score
91 records- 0196US6288454B1Semiconductor wafer having a layer-to-layer alignment mark and method for fabricating the sameLSI LOGIC CORP·Filed 2000·Granted Sep 11, 2001·216 cites·4 claims
- 0294US6342734B1Interconnect-integrated metal-insulator-metal capacitor and method of fabricating sameLSI LOGIC CORP·Filed 2000·Granted Jan 29, 2002·77 cites·15 claims
- 0394US5312512AGlobal planarization using SOG and CMPNCR CO·Filed 1992·Granted May 17, 1994·179 cites·2 claims
- 0493US5100503ASilica-based anti-reflective planarizing layerNCR CO·Filed 1991·Granted Mar 31, 1992·173 cites·15 claims
- 0592US5665845AElectronic device with a spin-on glass dielectric layerAT & T GLOBAL INF SOLUTION·Filed 1996·Granted Sep 9, 1997·78 cites·8 claims
- 0690US6115233AIntegrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central regionLSI LOGIC CORP·Filed 1996·Granted Sep 5, 2000·78 cites·25 claims
- 0789US6341056B1Capacitor with multiple-component dielectric and method of fabricating sameLSI LOGIC CORP·Filed 2000·Granted Jan 22, 2002·80 cites·21 claims
- 0889US5527872AElectronic device with a spin-on glass dielectric layerAT & T GLOBAL INF SOLUTION·Filed 1994·Granted Jun 18, 1996·49 cites·8 claims
- 0989US5152834ASpin-on glass compositionNCR CO·Filed 1991·Granted Oct 6, 1992·57 cites·20 claims
- 1088US6504202B1Interconnect-embedded metal-insulator-metal capacitorLSI LOGIC CORP·Filed 2000·Granted Jan 7, 2003·47 cites·20 claims
- 1188US6211096B1Tunable dielectric constant oxide and method of manufactureLSI LOGIC CORP·Filed 1997·Granted Apr 3, 2001·93 cites·3 claims
- 1287US6524926B1Metal-insulator-metal capacitor formed by damascene processes between metal interconnect layers and method of forming sameLSI LOGIC CORP·Filed 2000·Granted Feb 25, 2003·46 cites·17 claims
- 1386US6562700B1Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removalLSI LOGIC CORP·Filed 2001·Granted May 13, 2003·57 cites·28 claims
- 1486US5868608ASubsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatusLSI LOGIC CORP·Filed 1996·Granted Feb 9, 1999·77 cites·13 claims
- 1586US5861055APolishing composition for CMP operationsLSI LOGIC CORP·Filed 1997·Granted Jan 19, 1999·90 cites·9 claims
- 1685US6566186B1Capacitor with stoichiometrically adjusted dielectric and method of fabricating sameLSI LOGIC CORP·Filed 2000·Granted May 20, 2003·39 cites·14 claims
- 1785US6354908B2Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical systemLSI LOGIC CORP·Filed 2001·Granted Mar 12, 2002·30 cites·18 claims
- 1884US6077783AMethod and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor waferLSI LOGIC CORP·Filed 1998·Granted Jun 20, 2000·72 cites·10 claims
- 1983US5728626ASpin-on conductor process for integrated circuitsAT & T GLOBAL INF SOLUTION·Filed 1995·Granted Mar 17, 1998·73 cites·26 claims
- 2083US5645736AMethod for polishing a waferSYMBIOS LOGIC INC·Filed 1995·Granted Jul 8, 1997·67 cites·21 claims
- 2182US7118985B2Method of forming a metal-insulator-metal capacitor in an interconnect cavityLSI LOGIC CORP·Filed 2002·Granted Oct 10, 2006·27 cites·12 claims
- 2281US5472488ACoating solution for forming glassy layersHYUNDAI ELECTRONICS AMERICA·Filed 1994·Granted Dec 5, 1995·66 cites·11 claims
- 2376US6241847B1Method and apparatus for detecting a polishing endpoint based upon infrared signalsLSI LOGIC CORP·Filed 1998·Granted Jun 5, 2001·47 cites·8 claims
- 2476US5302198ACoating solution for forming glassy layersNCR CO·Filed 1990·Granted Apr 12, 1994·56 cites·9 claims
- 2575US6177305B1Fabrication of metal-insulator-metal capacitive structuresLSI LOGIC CORP·Filed 1998·Granted Jan 23, 2001·47 cites·27 claims
- 2675US6121147AApparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substanceLSI LOGIC CORP·Filed 1998·Granted Sep 19, 2000·46 cites·20 claims
- 2774US6284586B1Integrated circuit device and method of making the same using chemical mechanical polishing to remove material in two layers following maskingLSI LOGIC CORP·Filed 1999·Granted Sep 4, 2001·29 cites·12 claims
- 2873US6324313B1On-chip multiple layer vertically transitioning optical waveguide and damascene method of fabricating the sameLSI LOGIC CORP·Filed 1998·Granted Nov 27, 2001·33 cites·16 claims
- 2973US6201253B1Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical systemLSI LOGIC CORP·Filed 1998·Granted Mar 13, 2001·36 cites·10 claims
- 3073US6136662ASemiconductor wafer having a layer-to-layer alignment mark and method for fabricating the sameLSI LOGIC CORP·Filed 1999·Granted Oct 24, 2000·39 cites·14 claims
- 3172US7598127B2Nanotube fuse structureNANTERO INC·Filed 2005·Granted Oct 6, 2009·5 cites·3 claims
- 3271US6480643B1On-chip multiple layer vertically transitioning optical waveguide and damascene method of fabricating the sameLSI LOGIC CORP·Filed 2001·Granted Nov 12, 2002·11 cites·18 claims
- 3371US4855258ANative oxide reduction for sealing nitride depositionNCR CO·Filed 1987·Granted Aug 8, 1989·36 cites·9 claims
- 3469US7081379B2Local interconnect for integrated circuitLSI LOGIC CORP·Filed 2005·Granted Jul 25, 2006·4 cites·1 claims
- 3569US6891219B2Metal-insulator-metal capacitor formed by damascene processes between metal interconnect layers and method of forming sameLSI LOGIC CORP·Filed 2002·Granted May 10, 2005·14 cites·14 claims
- 3669US6168502B1Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatusLSI LOGIC CORP·Filed 1998·Granted Jan 2, 2001·24 cites·11 claims
- 3767US7384801B2Integrated circuit with inductor having horizontal magnetic flux linesLSI CORP·Filed 2007·Granted Jun 10, 2008·3 cites·8 claims
- 3866US5340770AMethod of making a shallow junction by using first and second SOG layersNCR CO·Filed 1992·Granted Aug 23, 1994·37 cites·20 claims
- 3965US7308627B2Self-timed reliability and yield vehicle with gated data and clockLSI CORP·Filed 2004·Granted Dec 11, 2007·10 cites·28 claims
- 4065US6562735B1Control of reaction rate in formation of low k carbon-containing silicon oxide dielectric material using organosilane, unsubstituted silane, and hydrogen peroxide reactantsLSI LOGIC CORP·Filed 2001·Granted May 13, 2003·10 cites·27 claims
- 4165US5438022AMethod for using low dielectric constant material in integrated circuit fabricationAT & T GLOBAL INF SOLUTION·Filed 1993·Granted Aug 1, 1995·20 cites·4 claims
- 4264US7361965B2Method and apparatus for redirecting void diffusion away from vias in an integrated circuit designLSI LOGIC CORP·Filed 2005·Granted Apr 22, 2008·2 cites·18 claims
- 4364US6775453B1On-chip graded index of refraction optical waveguide and damascene method of fabricating the sameLSI LOGIC CORP·Filed 1998·Granted Aug 10, 2004·29 cites·6 claims
- 4463US7023067B2Bond pad designLSI LOGIC CORP·Filed 2003·Granted Apr 4, 2006·11 cites·13 claims
- 4562US7436040B2Method and apparatus for diverting void diffusion in integrated circuit conductorsLSI CORP·Filed 2005·Granted Oct 14, 2008·2 cites·13 claims
- 4662US6528389B1Substrate planarization with a chemical mechanical polishing stop layerLSI LOGIC CORP·Filed 1998·Granted Mar 4, 2003·27 cites·14 claims
- 4761US8629488B2Method for manufacturing an energy storage device and structure thereforHOSE SALLIE·Filed 2008·Granted Jan 14, 2014·3 cites·17 claims
- 4861US5963828AMethod for tungsten nucleation from WF6 using titanium as a reducing agentLSI LOGIC CORP·Filed 1996·Granted Oct 5, 1999·27 cites·29 claims
- 4960US6583026B1Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structureLSI LOGIC CORP·Filed 2001·Granted Jun 24, 2003·7 cites·23 claims
- 5060US6570221B1Bonding of silicon wafersHYUNDAI ELECTRONICS AMERICA·Filed 1993·Granted May 27, 2003·16 cites·17 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →