Inventor · disambiguated record
Chunlan Mo
Also filed as: MO CHUNLAN
5 granted patents·3 pending applications·4 citations·filing 2006–2012
65Inventor score
Top patents by PatentIndex Score
8 records- 0165US7888779B2Method of fabrication InGaAIN film and light-emitting device on a silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 15, 2011·3 cites·24 claims
- 0259US8053757B2Gallium nitride light-emitting device with ultra-high reverse breakdown voltageLATTICE POWER JIANGXI CORP·Filed 2007·Granted Nov 8, 2011·1 cites·27 claims
- 0351US2011133158A1Method for fabricating ingan-based multi-quantum well layersLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 0446US8461029B2Method for fabricating InGaN-based multi-quantum well layersJIANG FENGYI·Filed 2012·Granted Jun 11, 2013·0 cites·11 claims
- 0543US2011133159A1Semiconductor light-emitting device with passivation in p-type layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 0640US8431936B2Method for fabricating a p-type semiconductor structureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·12 claims
- 0740US8431475B2Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperatureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·18 claims
- 0840US2011298005A1Method for fabricating an n-type semiconductor material using silane as a precursorJIANG FENGYI·Filed 2007·Application pending·0 cites
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