Inventor · disambiguated record
Matthew J. King
Also filed as: KING MATTHEW · KING MATTHEW J · KING MATTHEW JAMES
56 granted patents·28 pending applications·98 citations·filing 2008–2025
97Inventor score
Files withMICRON TECHNOLOGY INC69LODESTAR LICENSING GROUP LLC8GATES CORP2MILLER MARVIN23M INNOVATIVE PROPERTIES CO1
Top patents by PatentIndex Score
84 records- 0198US11362175B1Select gate gate-induced-drain-leakage enhancementMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 14, 2022·8 cites·20 claims
- 0296US11844220B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 12, 2023·2 cites·14 claims
- 0395US11088017B2Stair step structures including insulative materials, and related devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 10, 2021·4 cites·17 claims
- 0495US10269625B1Methods of forming semiconductor structures having stair step structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 23, 2019·39 cites·7 claims
- 0592US10566241B1Methods of forming a semiconductor device, and related semiconductor devices and systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 18, 2020·7 cites·27 claims
- 0690US11742380B2Select gate gate-induced-drain-leakage enhancementMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 29, 2023·1 cites·20 claims
- 0790US9905990B1Background removal from Raman spectra by an intracavity active-tuning element for a laserALAKAI DEFENSE SYSTEMS INC·Filed 2015·Granted Feb 27, 2018·11 cites·7 claims
- 0889US11101210B2Methods for manufacturing a memory array having strings of memory cells comprising forming bridge material between memory blocksMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 24, 2021·4 cites·9 claims
- 0989US10600682B2Semiconductor devices including a stair step structure, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 24, 2020·6 cites·20 claims
- 1087US11411013B2Microelectronic devices including stair step structures, and related electronic devices and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 9, 2022·2 cites·29 claims
- 1185US2025301648A1Microelectronic devices including pillars with upper portions having perimeters interrputed by elongate isolation structuresLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1285US2025107094A1Integrated Assemblies and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1384US12256546B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2023·Granted Mar 18, 2025·0 cites·24 claims
- 1483US12324154B2Microelectronic devices including pillars with partially-circular upper portions and circular lower portions, and related methodsLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Jun 3, 2025·0 cites·19 claims
- 1583US11887667B2Select gate transistor with segmented channel finMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 30, 2024·1 cites·21 claims
- 1679US2025379103A1Microelectronic devices including slot structuresMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1779US2024407161A1Methods of forming microelectronic devices including stair step structuresLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 1878US11152388B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 19, 2021·2 cites·6 claims
- 1978US10164044B2Gate stacksMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 25, 2018·2 cites·32 claims
- 2077US11800717B2Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 2177US11114379B2Integrated circuitry, memory integrated circuitry, and methods used in forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 7, 2021·3 cites·40 claims
- 2277US2025071996A1Memory device including multiple decks of memory cells and pillars extending through the decksLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 2377US2025391769A1Microelectronic devices including stadium structures, and related methods and electronic systemsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2475US11205654B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 21, 2021·2 cites·25 claims
- 2575US2024099007A1Memory devices and related electronic systemsMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2674US12279423B2Semiconductor devices comprising carbon-doped silicon nitride and related methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 2774US12063778B2Microelectronic devices including stair step structures, and related electronic devices and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 13, 2024·0 cites·15 claims
- 2873US12167599B2Memory device including multiple decks of memory cells and pillars extending through the decksLODESTAR LICENSING GROUP LLC·Filed 2022·Granted Dec 10, 2024·0 cites·17 claims
- 2973US11508746B2Semiconductor device having a stack of data lines with conductive structures on both sides thereofMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 22, 2022·1 cites·10 claims
- 3073US10658380B2Formation of termination structures in stacked memory arraysMICRON TECHNOLOGY INC·Filed 2018·Granted May 19, 2020·1 cites·24 claims
- 3173US2025159878A1Methods of forming semiconductor devices comprising carbon-doped silicon nitrideMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3273US2025159877A1Semiconductor devices comprising carbon-doped silicon nitrideMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3372US12513903B2Method for manufacturing a memory structure having stacked data lines and conductive structures on sides thereofLODESTAR LICENSING GROUP LLC·Filed 2022·Granted Dec 30, 2025·0 cites·19 claims
- 3472US12438076B2Memory array having an intervening material between adjacent memory blocks with an elongated seam thereinLODESTAR LICENSING GROUP LLC·Filed 2021·Granted Oct 7, 2025·0 cites·12 claims
- 3572US11322516B2Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2020·Granted May 3, 2022·0 cites·25 claims
- 3672US2024237352A1Microelectronic devices with source region vertically between tiered decks, and related methodsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3771US11805645B2Integrated assemblies having rugged material fill, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 31, 2023·1 cites·81 claims
- 3871US11621273B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 4, 2023·0 cites·41 claims
- 3971US2025384903A1Distributed string drivers under an arrayMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4070US12010847B2Foundational supports within integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 11, 2024·0 cites·17 claims
- 4170US11937428B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsLODESTAR LICENSING GROUP LLC·Filed 2021·Granted Mar 19, 2024·0 cites·18 claims
- 4268US11700729B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 11, 2023·0 cites·20 claims
- 4368US2024112734A1Select gate transistor with segmented channel finMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 4467US11705385B2Memory arrays and methods used in forming a memory array and conductive through-array-vias (TAVs)MICRON TECHNOLOGY INC·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 4567US2025380420A1Memory device including concentric conductive contactsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4667US2024315028A1Creating segmented source plates for sub-block definition in a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4766US12171101B2Microelectronic devices including conductive structuresMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 4866US11177279B2Formation of termination structures in stacked memory arraysMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 16, 2021·0 cites·20 claims
- 4965US11756826B2Forming terminations in stacked memory arraysMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 5065US11641742B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted May 2, 2023·0 cites·16 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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