Inventor · disambiguated record
Kelin J. Kuhn
Also filed as: KUHN KELIN · KUHN KELIN J
90 granted patents·14 pending applications·1,116 citations·filing 1983–2025
99Inventor score
Top patents by PatentIndex Score
104 records- 0198US9583491B2CMOS nanowire structureKIM SEIYON·Filed 2015·Granted Feb 28, 2017·28 cites·15 claims
- 0298US9343559B2Nanowire transistor devices and forming techniquesINTEL CORP·Filed 2015·Granted May 17, 2016·25 cites·20 claims
- 0398US9224810B2CMOS nanowire structureKIM SEIYON·Filed 2011·Granted Dec 29, 2015·44 cites·23 claims
- 0498US9129829B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2014·Granted Sep 8, 2015·62 cites·13 claims
- 0598US8753942B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2010·Granted Jun 17, 2014·144 cites·30 claims
- 0698US6368931B1Thin tensile layers in shallow trench isolation and method of making sameINTEL CORP·Filed 2000·Granted Apr 9, 2002·283 cites·25 claims
- 0797US9859368B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2016·Granted Jan 2, 2018·11 cites·15 claims
- 0897US9484447B2Integration methods to fabricate internal spacers for nanowire devicesKIM SEIYON·Filed 2012·Granted Nov 1, 2016·35 cites·9 claims
- 0997US9012284B2Nanowire transistor devices and forming techniquesGLASS GLENN A·Filed 2012·Granted Apr 21, 2015·37 cites·28 claims
- 1097US8258057B2Copper-filled trench contact for transistor performance improvementKUHN KELIN J·Filed 2006·Granted Sep 4, 2012·53 cites·13 claims
- 1196US11139400B2Non-planar semiconductor device having hybrid geometry-based active regionGOOGLE LLC·Filed 2020·Granted Oct 5, 2021·4 cites·20 claims
- 1296US9812524B2Nanowire transistor devices and forming techniquesINTEL CORP·Filed 2016·Granted Nov 7, 2017·13 cites·20 claims
- 1396US9472613B2Conversion of strain-inducing buffer to electrical insulatorINTEL CORP·Filed 2015·Granted Oct 18, 2016·13 cites·20 claims
- 1496US9064944B2Nanowire transistor with underlayer etch stopsKIM SEIYON·Filed 2013·Granted Jun 23, 2015·27 cites·14 claims
- 1594US9608059B2Semiconductor device with isolated body portionCAPPELLANI ANNALISA·Filed 2011·Granted Mar 28, 2017·18 cites·28 claims
- 1694US8766372B2Copper-filled trench contact for transistor performance improvementKUHN KELIN J·Filed 2012·Granted Jul 1, 2014·15 cites·18 claims
- 1793US10074573B2CMOS nanowire structureINTEL CORP·Filed 2017·Granted Sep 11, 2018·8 cites·18 claims
- 1893US9595581B2Silicon and silicon germanium nanowire structuresINTEL CORP·Filed 2015·Granted Mar 14, 2017·7 cites·19 claims
- 1993US9564522B2Nanowire structures having non-discrete source and drain regionsCEA STEPHEN M·Filed 2015·Granted Feb 7, 2017·6 cites·9 claims
- 2093US9129827B2Conversion of strain-inducing buffer to electrical insulatorCAPPELLANI ANNALISA·Filed 2012·Granted Sep 8, 2015·12 cites·25 claims
- 2193US9087863B2Nanowire structures having non-discrete source and drain regionsCEA STEPHEN M·Filed 2011·Granted Jul 21, 2015·10 cites·17 claims
- 2293US8558279B2Non-planar device having uniaxially strained semiconductor body and method of making sameCEA STEPHEN M·Filed 2010·Granted Oct 15, 2013·15 cites·20 claims
- 2392US10026829B2Semiconductor device with isolated body portionINTEL CORP·Filed 2017·Granted Jul 17, 2018·8 cites·25 claims
- 2492US8890120B2Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETsKOTLYAR ROZA·Filed 2012·Granted Nov 18, 2014·13 cites·14 claims
- 2591US9691843B2Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or compositionINTEL CORP·Filed 2016·Granted Jun 27, 2017·7 cites·11 claims
- 2691US8269283B2Methods and apparatus to reduce layout based strain variations in non-planar transistor structuresCEA STEPHEN M·Filed 2009·Granted Sep 18, 2012·18 cites·8 claims
- 2791US2025331249A1Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2025·Application pending·0 cites
- 2890US4563763AMethod and apparatus for cooling a slab laserTRUSTEES LELAND STANFORD UNIVE·Filed 1983·Granted Jan 7, 1986·38 cites·12 claims
- 2989US12513958B2Nanowire transistor fabrication with hardmask layersSONY GROUP CORP·Filed 2024·Granted Dec 30, 2025·0 cites·13 claims
- 3089US12363967B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2023·Granted Jul 15, 2025·0 cites·8 claims
- 3189US11581406B2Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layerINTEL CORP·Filed 2021·Granted Feb 14, 2023·1 cites·17 claims
- 3289US2025185316A1Silicon and silicon germanium nanowire structuresSONY GROUP CORP·Filed 2024·Application pending·0 cites
- 3388US9508796B2Internal spacers for nanowire transistors and method of fabrication thereofINTEL CORP·Filed 2013·Granted Nov 29, 2016·9 cites·18 claims
- 3488US8487348B2Methods and apparatus to reduce layout based strain variations in non-planar transistor structuresCEA STEPHEN M·Filed 2012·Granted Jul 16, 2013·8 cites·12 claims
- 3587US9935107B2CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the sameINTEL CORP·Filed 2013·Granted Apr 3, 2018·6 cites·20 claims
- 3687US9893167B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2014·Granted Feb 13, 2018·9 cites·30 claims
- 3786US9559160B2Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or compositionCAPPELLANI ANNALISA·Filed 2011·Granted Jan 31, 2017·5 cites·15 claims
- 3885US12046637B2Nanowire transistor fabrication with hardmask layersSONY GROUP CORP·Filed 2023·Granted Jul 23, 2024·0 cites·13 claims
- 3985US10424580B2Semiconductor devices having modulated nanowire countsCAPPELLANI ANNALISA·Filed 2011·Granted Sep 24, 2019·6 cites·25 claims
- 4085US9825130B2Leakage reduction structures for nanowire transistorsINTEL CORP·Filed 2013·Granted Nov 21, 2017·5 cites·21 claims
- 4183US12125916B2Nanowire structures having non-discrete source and drain regionsGOOGLE LLC·Filed 2022·Granted Oct 22, 2024·0 cites·7 claims
- 4283US10580860B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2019·Granted Mar 3, 2020·1 cites·21 claims
- 4382US11869939B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2022·Granted Jan 9, 2024·0 cites·10 claims
- 4482US10121861B2Nanowire transistor fabrication with hardmask layersINTEL CORP·Filed 2013·Granted Nov 6, 2018·3 cites·13 claims
- 4582US9935205B2Internal spacers for nanowire transistors and method of fabrication thereofINTEL CORP·Filed 2016·Granted Apr 3, 2018·3 cites·8 claims
- 4682US9673302B2Conversion of strain-inducing buffer to electrical insulatorINTEL CORP·Filed 2016·Granted Jun 6, 2017·2 cites·20 claims
- 4782US7737770B2Power switches having positive-channel high dielectric constant insulated gate field effect transistorsINTEL CORP·Filed 2006·Granted Jun 15, 2010·9 cites·14 claims
- 4882US6627506B2Thin tensile layers in shallow trench isolation and method of making sameINTEL CORP·Filed 2001·Granted Sep 30, 2003·23 cites·15 claims
- 4981US10121856B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2017·Granted Nov 6, 2018·1 cites·17 claims
- 5081US9911835B2Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETsINTEL CORP·Filed 2017·Granted Mar 6, 2018·2 cites·21 claims
Showing the top 50 of 104 patent records by PatentIndex Score.
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