Inventor · disambiguated record
Toshiya Yokogawa
Also filed as: YOKOGAWA TOSHIYA
109 granted patents·32 pending applications·798 citations·filing 1987–2023
99Inventor score
Files withPANASONIC CORP57MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32YOKOGAWA TOSHIYA12OYA MITSUAKI7KATO RYOU6
Top patents by PatentIndex Score
141 records- 0194US6306211B1Method for growing semiconductor film and method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 23, 2001·84 cites·14 claims
- 0293US7501667B2Nitride semiconductor light-emitting devicePANASONIC CORP·Filed 2005·Granted Mar 10, 2009·16 cites·14 claims
- 0392US8928004B2Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for samePANASONIC CORP·Filed 2013·Granted Jan 6, 2015·12 cites·16 claims
- 0490US8110851B2Nitride-based semiconductor device and method for fabricating the sameYOKOGAWA TOSHIYA·Filed 2011·Granted Feb 7, 2012·9 cites·16 claims
- 0589US6989553B2Semiconductor device having an active region of alternating layersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 24, 2006·44 cites·9 claims
- 0688US8058639B2Nitride semiconductor element and method for production thereofINOUE AKIRA·Filed 2010·Granted Nov 15, 2011·10 cites·26 claims
- 0787US8822000B2Nanostructure and method for manufacturing the sameKUMAGAI HIRONORI·Filed 2008·Granted Sep 2, 2014·17 cites·15 claims
- 0886US7030417B2Semiconductor light emitting device and fabrication method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 18, 2006·30 cites·8 claims
- 0986US7009216B2Semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 7, 2006·24 cites·23 claims
- 1086US6617653B1MisfetMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 9, 2003·30 cites·28 claims
- 1185US8299490B2Nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2011·Granted Oct 30, 2012·6 cites·14 claims
- 1285US7846820B2Nitride semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 7, 2010·10 cites·13 claims
- 1384US8277967B2Energy device, method for manufacturing the same, and apparatus including the sameASARI TAKUMA·Filed 2008·Granted Oct 2, 2012·6 cites·18 claims
- 1484US6690035B1Semiconductor device having an active region of alternating layersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 10, 2004·30 cites·4 claims
- 1584US6654604B2Equipment for communication systemMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 25, 2003·28 cites·17 claims
- 1682US8357607B2Method for fabricating nitride-based semiconductor device having electrode on m-planePANASONIC CORP·Filed 2010·Granted Jan 22, 2013·4 cites·8 claims
- 1782US7338827B2Nitride semiconductor laser and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Mar 4, 2008·16 cites·5 claims
- 1881US8852965B2Method of making semiconductor having superhydrophilic principal surface and method of arranging particles thereonPANASONIC CORP·Filed 2013·Granted Oct 7, 2014·4 cites·18 claims
- 1981US8604591B2Nitride-type semiconductor element and process for production thereofYOKOGAWA TOSHIYA·Filed 2012·Granted Dec 10, 2013·3 cites·13 claims
- 2081US6995396B2Semiconductor substrate, semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·25 cites·11 claims
- 2180US8981340B2Nitride semiconductor device and production method thereofPANASONIC CORP·Filed 2013·Granted Mar 17, 2015·2 cites·8 claims
- 2280US8896001B2Nitride semiconductor light emitting devicePANASONIC CORP·Filed 2013·Granted Nov 25, 2014·5 cites·11 claims
- 2380US6903383B2Semiconductor device having a high breakdown voltage for use in communication systemsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 7, 2005·28 cites·15 claims
- 2480US6806109B2Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 19, 2004·22 cites·22 claims
- 2579US7470608B2Semiconductor light emitting device and fabrication method thereofPANASONIC CORP·Filed 2006·Granted Dec 30, 2008·5 cites·9 claims
- 2678US8791473B2Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating deviceYOKOGAWA TOSHIYA·Filed 2009·Granted Jul 29, 2014·8 cites·17 claims
- 2778US7704860B2Nitride-based semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2005·Granted Apr 27, 2010·6 cites·9 claims
- 2878US4866489ASemiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted Sep 12, 1989·40 cites·13 claims
- 2977US8421054B2Light-emitting diodeIWANAGA JUNKO·Filed 2012·Granted Apr 16, 2013·3 cites·11 claims
- 3077US6864507B2MisfetMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 8, 2005·17 cites·30 claims
- 3177US6674131B2Semiconductor power device for high-temperature applicationsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jan 6, 2004·23 cites·4 claims
- 3276US8866127B2Nitride semiconductor light-emitting element including Si-doped layer, and light sourcePANASONIC CORP·Filed 2013·Granted Oct 21, 2014·3 cites·20 claims
- 3376US8124986B2Nitride-based semiconductor device and method for fabricating the sameANZUE NAOMI·Filed 2010·Granted Feb 28, 2012·5 cites·27 claims
- 3475US8455905B2Semiconductor light-emitting deviceFUJIKANE MASAKI·Filed 2011·Granted Jun 4, 2013·3 cites·25 claims
- 3575US6580125B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·18 cites·8 claims
- 3674US9209361B2Nitride semiconductor light-emitting elementPANASONIC CORP·Filed 2014·Granted Dec 8, 2015·2 cites·8 claims
- 3772US6778308B2Process of fabricating semiconductor light emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 17, 2004·11 cites·14 claims
- 3871US8306085B2Nitride compound semiconductor element and method for manufacturing sameHASEGAWA YOSHIAKI·Filed 2011·Granted Nov 6, 2012·2 cites·8 claims
- 3971US7221690B2Semiconductor laser and process for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 22, 2007·8 cites·8 claims
- 4070US9147804B2Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting elementPANASONIC CORP·Filed 2013·Granted Sep 29, 2015·2 cites·13 claims
- 4170US6600203B2Semiconductor device with silicon carbide suppression layer for preventing extension of micropipeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 29, 2003·12 cites·3 claims
- 4269US9324913B2Nitride semiconductor structure, multilayer structure, and nitride semiconductor light-emitting elementPANASONIC CORP·Filed 2014·Granted Apr 26, 2016·2 cites·5 claims
- 4369US8841220B2Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structurePANASONIC CORP·Filed 2013·Granted Sep 23, 2014·2 cites·12 claims
- 4469US8268706B2Semiconductor device manufacturing methodKATO RYOU·Filed 2009·Granted Sep 18, 2012·3 cites·11 claims
- 4569US6940127B2Equipment for communication system and semiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·12 cites·7 claims
- 4669US6855571B1Method of producing GaN-based semiconductor laser device and semiconductor substrate used thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 15, 2005·12 cites·5 claims
- 4768US8039283B2Nitride compound semiconductor element and method for manufacturing samePANASONIC CORP·Filed 2006·Granted Oct 18, 2011·2 cites·6 claims
- 4867US9252330B2Semiconductor light emitting elementISOZAKI AKIHIRO·Filed 2011·Granted Feb 2, 2016·2 cites·5 claims
- 4967US8546167B2Gallium nitride-based compound semiconductor light-emitting elementKATO RYOU·Filed 2012·Granted Oct 1, 2013·2 cites·5 claims
- 5067US8222670B2Semiconductor light emitting element and method for manufacturing sameANZUE NAOMI·Filed 2011·Granted Jul 17, 2012·1 cites·4 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
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