Inventor · disambiguated record
Feng-Yi Chang
Also filed as: CHANG FENG-YI
141 granted patents·14 pending applications·397 citations·filing 2005–2023
99Inventor score
Top patents by PatentIndex Score
155 records- 0198US9209273B1Method of fabricating metal gate structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 8, 2015·59 cites·20 claims
- 0296US10043809B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 7, 2018·17 cites·8 claims
- 0396US9530851B1Semiconductor device and manufacturing methods thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·15 cites·20 claims
- 0495US9543211B1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 10, 2017·15 cites·17 claims
- 0594US10354876B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 16, 2019·10 cites·20 claims
- 0694US10186513B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 22, 2019·9 cites·8 claims
- 0794US9349812B2Semiconductor device with self-aligned contact and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 24, 2016·18 cites·9 claims
- 0893US10217750B1Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·9 cites·4 claims
- 0993US9230864B1Method of forming a semiconductor device having a metal gateUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jan 5, 2016·18 cites·11 claims
- 1092US10373957B2Capacitor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 6, 2019·6 cites·12 claims
- 1192US10147728B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 4, 2018·8 cites·14 claims
- 1292US9263540B1Metal gate structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 16, 2016·8 cites·5 claims
- 1391US10366993B2Semiconductor structure having air gap between gate electrode and distal end portion of active areaUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 30, 2019·6 cites·9 claims
- 1491US10312088B1Self-aligned double patterning methodUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·7 cites·10 claims
- 1591US10062613B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 28, 2018·6 cites·10 claims
- 1689US10170362B2Semiconductor memory device with bit line contact structure and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 1, 2019·5 cites·7 claims
- 1789US9780193B2Device with reinforced metal gate spacer and method of fabricatingUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 3, 2017·6 cites·6 claims
- 1889US9698255B2Semiconductor device having gate structure with doped hard maskUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 4, 2017·5 cites·8 claims
- 1989US9490334B2Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Nov 8, 2016·8 cites·4 claims
- 2089US8916475B1Patterning methodUNITED MICROELECTRONICS CORP·Filed 2013·Granted Dec 23, 2014·12 cites·17 claims
- 2188US8993433B2Manufacturing method for forming a self aligned contactUNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 31, 2015·9 cites·13 claims
- 2287US10784334B2Method of manufacturing a capacitorUNITED MICROELECTRONICS CORP·Filed 2018·Granted Sep 22, 2020·4 cites·10 claims
- 2387US10147726B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 4, 2018·4 cites·13 claims
- 2487US9673100B2Semiconductor device having contact plug in two dielectric layers and two etch stop layersUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jun 6, 2017·7 cites·6 claims
- 2587US9640484B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 2, 2017·4 cites·8 claims
- 2686US10431679B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 1, 2019·3 cites·8 claims
- 2785US10854613B2Buried word line of a dynamic random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Dec 1, 2020·2 cites·5 claims
- 2885US10497704B2Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·3 cites·9 claims
- 2985US10103250B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 16, 2018·3 cites·7 claims
- 3085US9214392B1Method of forming contact hole and semiconductor structure with contact plugUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 15, 2015·7 cites·13 claims
- 3185US8785283B2Method for forming semiconductor structure having metal connectionUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jul 22, 2014·8 cites·15 claims
- 3283US10347644B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 9, 2019·3 cites·11 claims
- 3383US10312090B2Patterning methodUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·3 cites·16 claims
- 3483US10153165B1Patterning methodUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 11, 2018·3 cites·10 claims
- 3583US9728455B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 8, 2017·3 cites·8 claims
- 3682US12272646B2Semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Apr 8, 2025·0 cites·8 claims
- 3782US9685531B2Method for manufacturing semiconductor device having metal gateUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 20, 2017·3 cites·11 claims
- 3882US9023708B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 5, 2015·6 cites·18 claims
- 3981US10818664B2Method of forming semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 27, 2020·2 cites·12 claims
- 4081US9711411B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 18, 2017·3 cites·15 claims
- 4181US9324620B2Metal gate structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Apr 26, 2016·6 cites·13 claims
- 4280US10777559B1Semiconductor memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 15, 2020·3 cites·18 claims
- 4380US10381239B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 13, 2019·2 cites·10 claims
- 4480US9985123B2Method for fabricating a semiconductor device having gate structure with doped hard maskUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 29, 2018·2 cites·6 claims
- 4579US11107879B2Capacitor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 31, 2021·3 cites·18 claims
- 4678US10795255B2Method of forming layout definition of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 6, 2020·2 cites·14 claims
- 4778US10593677B2Semiconductor structure with capacitor landing pad and method of make the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 17, 2020·2 cites·7 claims
- 4878US9548239B2Method for fabricating contact plug in an interlayer dielectric layerUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 17, 2017·3 cites·7 claims
- 4978US8592321B2Method for fabricating an apertureCHANG FENG-YI·Filed 2011·Granted Nov 26, 2013·4 cites·14 claims
- 5077US10332978B2Device with reinforced metal gate spacer and method of fabricatingUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 25, 2019·2 cites·15 claims
Showing the top 50 of 155 patent records by PatentIndex Score.
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