Inventor · disambiguated record
Young-Kwan Cha
Also filed as: CHA YOUNG-KWAN
11 granted patents·9 pending applications·91 citations·filing 2005–2009
90Inventor score
Top patents by PatentIndex Score
20 records- 0193US7602042B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·26 cites·21 claims
- 0287US7998804B2Nonvolatile memory device including nano dot and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 16, 2011·9 cites·9 claims
- 0386US7935953B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 3, 2011·11 cites·16 claims
- 0480US7453085B2Nano-elastic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·17 cites·17 claims
- 0580US7446333B2Nonvolatile memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·9 cites·11 claims
- 0679US7919777B2Bottom gate thin film transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 5, 2011·5 cites·11 claims
- 0776US7663136B2Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·2 cites·6 claims
- 0873US7936044B2Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 3, 2011·4 cites·26 claims
- 0972US7629207B2Bottom gate thin film transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 8, 2009·3 cites·11 claims
- 1059US7816175B2Nano-elastic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 19, 2010·5 cites·25 claims
- 1156US2007187730A1Memory devices having charge trap layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1249US2007090444A1Nonvolatile memory device including nano dot and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1344US2008132020A1Method of forming silicon nano crystals and method of manufacturing memory devices having the sameCHA YOUNG-KWAN·Filed 2007·Application pending·0 cites
- 1442US2008142878A1Charge trap memory device and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1541US2007190721A1Semiconductor memory device having an alloy metal gate electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1641US2007252207A1Thin film transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1741US2007241333A1Amorphous silicon thin film transistor, organic light-emitting display device including the same and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1840US2007267679A1Nonvolatile memory devices including floating gates formed of silicon nano-crystals and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1938US7542346B2Memory device and method for operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·0 cites·18 claims
- 2038US2006180845A1Memory device with silicon rich silicon oxide layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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