Inventor · disambiguated record
Hideshi Nishikawa
Also filed as: NISHIKAWA HIDESHI
8 granted patents·143 citations·filing 1993–2004
87Inventor score
Top patents by PatentIndex Score
8 records- 0179US7397110B2High resistance silicon wafer and its manufacturing methodSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Jul 8, 2008·24 cites·15 claims
- 0277US5508207AMethod of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminantsSUMITOMO SITIX CORP·Filed 1993·Granted Apr 16, 1996·69 cites·1 claims
- 0371US6709957B2Method of producing epitaxial wafersSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Mar 23, 2004·9 cites·10 claims
- 0470US7273647B2Silicon annealed wafer and silicon epitaxial waferSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Sep 25, 2007·13 cites·7 claims
- 0569US6835245B2Method of manufacturing epitaxial wafer and method of producing single crystal as material thereforSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Dec 28, 2004·8 cites·5 claims
- 0663US7014704B2Method for growing silicon single crystalSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Mar 21, 2006·5 cites·3 claims
- 0756US6337219B1Method of producing silicon single and single crystal silicon waferSUMITOMO METAL IND·Filed 1999·Granted Jan 8, 2002·13 cites·5 claims
- 0851US7220308B2Manufacturing method of high resistivity silicon single crystalSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted May 22, 2007·2 cites·8 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →