Inventor · disambiguated record
Todd C. Roggenbauer
Also filed as: ROGGENBAUER TODD · ROGGENBAUER TODD C
22 granted patents·4 pending applications·182 citations·filing 2002–2023
95Inventor score
Top patents by PatentIndex Score
26 records- 0189US7851889B2MOSFET device including a source with alternating P-type and N-type regionsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Dec 14, 2010·16 cites·20 claims
- 0289US7439584B2Structure and method for RESURF LDMOSFET with a current diverterFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 21, 2008·18 cites·15 claims
- 0384US7777257B2Bipolar Schottky diode and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 17, 2010·11 cites·20 claims
- 0484US7732274B2High voltage deep trench capacitorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 8, 2010·9 cites·15 claims
- 0582US7851857B2Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applicationsFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Dec 14, 2010·10 cites·20 claims
- 0682US7723204B2Semiconductor device with a multi-plate isolation structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted May 25, 2010·11 cites·12 claims
- 0782US7511319B2Methods and apparatus for a stepped-drift MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 31, 2009·9 cites·16 claims
- 0880US7405128B1Dotted channel MOSFET and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jul 29, 2008·8 cites·7 claims
- 0978US8188543B2Electronic device including a conductive structure extending through a buried insulating layerROGGENBAUER TODD C·Filed 2006·Granted May 29, 2012·12 cites·11 claims
- 1077US7550804B2Semiconductor device and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 23, 2009·7 cites·19 claims
- 1176US6734524B1Electronic component and method of manufacturing sameMOTOROLA INC·Filed 2002·Granted May 11, 2004·21 cites·33 claims
- 1271US7309638B2Method of manufacturing a semiconductor componentFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Dec 18, 2007·4 cites·10 claims
- 1370US7436025B2Termination structures for super junction devicesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 14, 2008·4 cites·20 claims
- 1469US7820519B2Process of forming an electronic device including a conductive structure extending through a buried insulating layerFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 26, 2010·5 cites·18 claims
- 1569US6930027B2Method of manufacturing a semiconductor componentFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 16, 2005·17 cites·27 claims
- 1666US6933546B2Semiconductor componentFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 23, 2005·11 cites·23 claims
- 1759US9142607B2Metal-insulator-metal capacitorCHENG XU·Filed 2012·Granted Sep 22, 2015·1 cites·6 claims
- 1859US2024128316A1Isolation structure for an active componentNXP BV·Filed 2023·Application pending·0 cites
- 1957US12328883B2Polycrystalline semiconductor resistorNXP USA INC·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 2056US9397233B2High voltage deep trench capacitorZHU RONGHUA·Filed 2010·Granted Jul 19, 2016·1 cites·19 claims
- 2156US6815780B1Semiconductor component with substrate injection protection structureMOTOROLA INC·Filed 2003·Granted Nov 9, 2004·7 cites·22 claims
- 2256US2025046651A1Optimal high voltage tub design with floating poly trenchesNXP BV·Filed 2023·Application pending·0 cites
- 2353US11695013B2Capacitor with an electrode wellNXP USA INC·Filed 2021·Granted Jul 4, 2023·0 cites·18 claims
- 2443US7763937B2Variable resurf semiconductor device and methodFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jul 27, 2010·0 cites·19 claims
- 2538US2013285201A1Mim capacitor formation method and structureZHANG ZHIHONG·Filed 2012·Application pending·0 cites
- 2633US2007200136A1Isolated zener diodesZHU RONGHUA·Filed 2006·Application pending·0 cites
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