Inventor · disambiguated record
Yeong-Taek Lee
Also filed as: LEE YEONG-TAEK
105 granted patents·9 pending applications·1,845 citations·filing 1993–2023
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD94PARK KI-TAE5HYUNDAI MOTOR CO LTD2PARK HYUN-KOOK2CHANG SANG HOAN1
Top patents by PatentIndex Score
114 records- 0199US9472282B2Resistive memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 18, 2016·69 cites·20 claims
- 0298US6870766B2Multi-level flash memory with temperature compensationSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 22, 2005·211 cites·16 claims
- 0397US7542350B2Methods of restoring data in flash memory devices and related flash memory device memory systemsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·61 cites·41 claims
- 0497US7254064B2Flash memory device having multi-level cell and reading and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 7, 2007·39 cites·10 claims
- 0596US9171617B1Resistive memory device and method programming sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 27, 2015·26 cites·20 claims
- 0696US7924629B2Three-dimensional memory device and programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·48 cites·15 claims
- 0796US7675783B2Nonvolatile memory device and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 9, 2010·47 cites·19 claims
- 0896US6469933B2Flash memory device capable of preventing program disturb and method for programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 22, 2002·121 cites·8 claims
- 0995US7692970B2Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·37 cites·25 claims
- 1095US7035144B2Flash memory device having multi-level cell and reading and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·68 cites·12 claims
- 1195US6813187B2Bit line setup and discharge circuit for programming non-volatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 2, 2004·60 cites·13 claims
- 1294US7940564B2Three-dimensional memory device with multi-plane architectureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·28 cites·16 claims
- 1394US7359245B2Flash memory device having multi-level cell and reading and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 15, 2008·24 cites·2 claims
- 1493US7843733B2Flash memory devices having three dimensional stack structures and methods of driving sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·29 cites·27 claims
- 1593US6735116B2NAND-type flash memory device with multi-page program, multi-page read, multi-block erase operationsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 11, 2004·86 cites·5 claims
- 1692US7940578B2Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 10, 2011·30 cites·13 claims
- 1792US7508732B2Multi-bit flash memory device including memory cells storing different numbers of bitsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 24, 2009·29 cites·29 claims
- 1892US6751124B2Bit line setup and discharge circuit for programming non-volatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 15, 2004·48 cites·2 claims
- 1991US7567452B2Multi-level dynamic memory device having open bit line structure and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 28, 2009·24 cites·17 claims
- 2090US9183932B1Resistive memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 10, 2015·11 cites·20 claims
- 2190US8179707B2Semiconductor memory devices and methods of arranging memory cell arrays thereofSONG KI-WHAN·Filed 2009·Granted May 15, 2012·20 cites·24 claims
- 2289US8223529B2Resistive memory devices, memory systems and methods of controlling input and output operations of the sameKIM HO-JUNG·Filed 2010·Granted Jul 17, 2012·13 cites·14 claims
- 2388US7317646B2Memory device having shared open bit line sense amplifier architectureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·15 cites·21 claims
- 2488US6594178B2Method for optimizing distribution profile of cell threshold voltages in NAND-type flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 15, 2003·48 cites·12 claims
- 2587US9570170B2Resistive memory device and method of operating the sameYOON CHI-WEON·Filed 2015·Granted Feb 14, 2017·9 cites·16 claims
- 2687US9449686B2Resistive memory device, resistive memory system and method of operating the resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 20, 2016·8 cites·20 claims
- 2787US7986560B2Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 26, 2011·15 cites·15 claims
- 2887US7715231B2Flash memory device having multi-level cell and reading and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 11, 2010·11 cites·3 claims
- 2987US7551480B2Multi-bit flash memory device and memory cell arraySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 23, 2009·13 cites·22 claims
- 3087US5404330AWord line boosting circuit and control circuit therefor in a semiconductor integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Apr 4, 1995·71 cites·14 claims
- 3186US9406359B2Memory devices, memory systems, and related operating methodsPARK HYUN-KOOK·Filed 2015·Granted Aug 2, 2016·9 cites·17 claims
- 3286US7672166B2Method of programming in a non-volatile memory device and non-volatile memory device for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 2, 2010·17 cites·23 claims
- 3385US9646685B2Resistive memory device, resistive memory, and operating method of the resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 9, 2017·7 cites·13 claims
- 3485US9514813B2Resistive memory device, resistive memory system, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·7 cites·20 claims
- 3585US9269430B1Memory device having cross point array structure, memory system, and method of operating memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 23, 2016·7 cites·20 claims
- 3685US7566927B2Flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 28, 2009·36 cites·13 claims
- 3785US7453729B2Bit line setup and discharge circuit for programming non-volatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 18, 2008·25 cites·8 claims
- 3884US7535761B2Flash memory device capable of preventing coupling effect and program method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·15 cites·24 claims
- 3984US7489544B2Flash memory device having multi-level cell and reading and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 10, 2009·9 cites·2 claims
- 4082US11114152B1Semiconductor memory device including page buffersSK HYNIX INC·Filed 2020·Granted Sep 7, 2021·1 cites·20 claims
- 4182US9558822B2Resistive memory device and method of operating the resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·6 cites·20 claims
- 4282US9437290B2Resistive memory device and operationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 6, 2016·6 cites·19 claims
- 4382US7755944B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 13, 2010·12 cites·16 claims
- 4480US8711610B2Non-volatile memory array and device using erase markersSEO HUI-KWON·Filed 2011·Granted Apr 29, 2014·8 cites·19 claims
- 4580US7911835B2Programming and reading five bits of data in two non-volatile memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 22, 2011·12 cites·25 claims
- 4680US6965964B2Nand flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 15, 2005·30 cites·13 claims
- 4779USRE46994EFlash memory devices having three dimensional stack structures and methods of driving sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 14, 2018·4 cites·73 claims
- 4879US8139406B2Non-volatile memory system and programming method of the samePARK KI TAE·Filed 2008·Granted Mar 20, 2012·11 cites·46 claims
- 4979US8027199B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 27, 2011·6 cites·8 claims
- 5079US8004898B2Nonvolatile memory device, program method thereof, and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 23, 2011·10 cites·13 claims
Showing the top 50 of 114 patent records by PatentIndex Score.
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