Inventor · disambiguated record
Hee-Sung Kang
Also filed as: KANG HEE-SUNG
37 granted patents·9 pending applications·489 citations·filing 2000–2023
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD31SK HYNIX INC3POSCO CO LTD2KANG HEE-SUNG1KYUNGPOOK NAT UNIV IND ACAD1
Top patents by PatentIndex Score
46 records- 0195US6498370B1SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 24, 2002·87 cites·14 claims
- 0293US6521959B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 18, 2003·85 cites·8 claims
- 0391US6812111B2Methods for fabricating MOS transistors with notched gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 2, 2004·72 cites·30 claims
- 0490US7914973B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 29, 2011·12 cites·24 claims
- 0587US7323420B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 29, 2008·11 cites·9 claims
- 0685US7781282B2Shared contact structure, semiconductor device and method of fabricating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 24, 2010·13 cites·8 claims
- 0785US7550822B2Dual-damascene metal wiring patterns for integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 23, 2009·13 cites·9 claims
- 0885US7348636B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·11 cites·5 claims
- 0984US6855641B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·31 cites·21 claims
- 1083US8952423B2Semiconductor device having decoupling capacitors and dummy transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 10, 2015·7 cites·15 claims
- 1183US6717209B1Semiconductor device having junction diode and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 6, 2004·27 cites·17 claims
- 1280US8114730B2Shared contact structure, semiconductor device and method of fabricating the semiconductor deviceYOO ABRAHAM·Filed 2010·Granted Feb 14, 2012·7 cites·10 claims
- 1379US12134811B2High-strength hot-rolled steel sheet having excellent bendability and low-temperature and method for manufacturing samePOSCO CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·3 claims
- 1477US6794716B2SOI MOSFET having body contact for preventing floating body effect and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 21, 2004·22 cites·5 claims
- 1576US8846304B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 30, 2014·2 cites·10 claims
- 1674US7285831B2CMOS device with improved performance and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·6 cites·20 claims
- 1773US9065046B2Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor deviceSK HYNIX INC·Filed 2013·Granted Jun 23, 2015·2 cites·8 claims
- 1871US9111880B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 18, 2015·1 cites·17 claims
- 1970US8409787B2Method of forming a pattern in a semiconductor device and method of forming a gate using the sameRYOU CHOONG-RYUL·Filed 2011·Granted Apr 2, 2013·2 cites·25 claims
- 2070US7179750B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 20, 2007·11 cites·11 claims
- 2170US7045429B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 16, 2006·6 cites·22 claims
- 2269US6541822B2Method of manufacturing an SOI type semiconductor that can restrain floating body effectSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 1, 2003·15 cites·10 claims
- 2368US11732339B2High-strength hot-rolled steel sheet having excellent bendability and low-temperature and method for manufacturing samePOSCO CO LTD·Filed 2018·Granted Aug 22, 2023·0 cites·7 claims
- 2467US9773840B2Semiconductor memory with reduced contact marginSK HYNIX INC·Filed 2015·Granted Sep 26, 2017·2 cites·19 claims
- 2565US6706569B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 16, 2004·10 cites·14 claims
- 2664US7052965B2Methods of fabricating MOS field effect transistors with pocket regions using implant blocking patternsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·9 cites·15 claims
- 2761US7410843B2Methods for fabricating reduced floating body effect static random access memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·2 cites·11 claims
- 2861US6703280B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 9, 2004·8 cites·8 claims
- 2959US6902959B2Semiconductor device having junction diode and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 7, 2005·5 cites·12 claims
- 3055US2016005624A1Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 3150US2012193322A9Methods of Forming Dual-Damascene Metal Wiring Patterns for Integrated Circuit Devices and Wiring Patterns Formed TherebyLEE BOUNG JU·Filed 2009·Application pending·0 cites
- 3249US7364987B2Method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·0 cites·24 claims
- 3349US7217625B2Method of fabricating a semiconductor device having a shallow source/drain regionSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 15, 2007·2 cites·20 claims
- 3449US2008032483A1Trench isolation methods of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3548US7338885B2Alignment mark and method for manufacturing a semiconductor device having the sameSAMSNUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 4, 2008·5 cites·18 claims
- 3648US2006194436A1Semiconductor device including resistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3747US8132374B2External wall panel unit for saving energy and external wall structure system using the sameLEE SANG LEEM·Filed 2010·Granted Mar 13, 2012·1 cites·10 claims
- 3845US10497749B2Electronic deviceSK HYNIX INC·Filed 2017·Granted Dec 3, 2019·0 cites·20 claims
- 3945US9035319B2Nitride semiconductor and fabricating method thereofKYUNGPOOK NAT UNIV IND ACAD·Filed 2013·Granted May 19, 2015·0 cites·8 claims
- 4045US2006240636A1Trench isolation methods of semiconductor deviceRYU HYUK-JU·Filed 2006·Application pending·0 cites
- 4144US2005142497A1Method of forming a pattern in a semiconductor device and method of forming a gate using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 4243US7105900B2Reduced floating body effect static random access memory cells and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 12, 2006·2 cites·18 claims
- 4338US2012220120A1Method for fabricating buried bit line in semiconductor deviceKANG HEE-SUNG·Filed 2011·Application pending·0 cites
- 4435US2004185608A1Methods of forming integrated circuit devices using buffer layers covering conductive/insulating interfacesFiled 2003·Application pending·0 cites
- 4535US2002115244A1SOI MOSFET having body contact for preventing floating body effect and method of fabricating the sameFiled 2002·Application pending·0 cites
- 4633US7179714B2Method of fabricating MOS transistor having fully silicided gateSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 20, 2007·0 cites·19 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →