Inventor · disambiguated record
Hidefumi Takaya
Also filed as: TAKAYA HIDEFUMI
36 granted patents·18 pending applications·229 citations·filing 2004–2025
96Inventor score
Top patents by PatentIndex Score
54 records- 0195US9136372B2Silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Granted Sep 15, 2015·37 cites·1 claims
- 0293US7999312B2Insulated gate-type semiconductor device having a low concentration diffusion regionTOYOTA MOTOR CO LTD·Filed 2007·Granted Aug 16, 2011·36 cites·12 claims
- 0392US8076718B2Insulated gate semiconductor device and method for producing the sameTAKAYA HIDEFUMI·Filed 2005·Granted Dec 13, 2011·34 cites·8 claims
- 0491US7586151B2Insulated gate semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2005·Granted Sep 8, 2009·23 cites·7 claims
- 0590US11476360B2Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2020·Granted Oct 18, 2022·2 cites·16 claims
- 0688US8598652B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2009·Granted Dec 3, 2013·16 cites·3 claims
- 0787US9818860B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2016·Granted Nov 14, 2017·4 cites·6 claims
- 0883US9853139B2Semiconductor device and method for manufacturing the semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Granted Dec 26, 2017·4 cites·6 claims
- 0981US9543428B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2013·Granted Jan 10, 2017·4 cites·13 claims
- 1081US8575689B2Silicon carbide semiconductor device and manufacturing method of the sameMIMURA TOMOHIRO·Filed 2011·Granted Nov 5, 2013·9 cites·3 claims
- 1180US10134593B2Semiconductor device and method for manufacturing sameDENSO CORP·Filed 2016·Granted Nov 20, 2018·3 cites·12 claims
- 1279US8334541B2SiC semiconductor deviceMIYAHARA SHINICHIRO·Filed 2011·Granted Dec 18, 2012·6 cites·10 claims
- 1377US7470953B2Insulated gate type semiconductor device and manufacturing method thereofTOYOTA MOTOR CO LTD·Filed 2004·Granted Dec 30, 2008·25 cites·20 claims
- 1476US9391190B2Field effect transistor incorporating a Schottky diodeTOYOTA MOTOR CO LTD·Filed 2014·Granted Jul 12, 2016·4 cites·2 claims
- 1576US8618555B2Silicon carbide semiconductor device and method of manufacturing the sameSUZUKI NAOHIRO·Filed 2011·Granted Dec 31, 2013·5 cites·11 claims
- 1676US2025107166A1Semiconductor device and manufacturing method of semiconductor deviceDENSO CORP·Filed 2024·Application pending·0 cites
- 1773US8492867B2Semiconductor device including cell region and peripheral region having high breakdown voltage structureYAMAMOTO KENSAKU·Filed 2011·Granted Jul 23, 2013·4 cites·15 claims
- 1870US9627248B2Insulated gate type semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Granted Apr 18, 2017·2 cites·4 claims
- 1967US8952430B2Semiconductor device and method for manufacturing semiconductor deviceTAKAYA HIDEFUMI·Filed 2011·Granted Feb 10, 2015·2 cites·16 claims
- 2067US2025380468A1Method for producing field effect transistorDENSO CORP·Filed 2025·Application pending·0 cites
- 2166US9214526B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2014·Granted Dec 15, 2015·2 cites·9 claims
- 2266US8525223B2Silicon carbide semiconductor deviceWATANABE HIROKI·Filed 2012·Granted Sep 3, 2013·2 cites·7 claims
- 2363US12205983B2Semiconductor device and manufacturing method of semiconductor deviceDENSO CORP·Filed 2021·Granted Jan 21, 2025·0 cites·6 claims
- 2463US2025040205A1Semiconductor device and manufacturing method of semiconductor deviceDENSO CORP·Filed 2024·Application pending·0 cites
- 2563US2025089293A1Field effect transistorDENSO CORP·Filed 2024·Application pending·0 cites
- 2662US8975139B2Manufacturing method of silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Granted Mar 10, 2015·1 cites·17 claims
- 2762US2025294820A1Method for manufacturing semiconductor deviceDENSO CORP·Filed 2025·Application pending·0 cites
- 2861US9640651B2Semiconductor device and method of manufacturing semiconductor deviceTAKAYA HIDEFUMI·Filed 2014·Granted May 2, 2017·1 cites·7 claims
- 2960US2024258425A1Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2024·Application pending·0 cites
- 3059US2025294836A1Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2025·Application pending·0 cites
- 3158US9281396B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2014·Granted Mar 8, 2016·1 cites·6 claims
- 3258US9257501B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2013·Granted Feb 9, 2016·1 cites·5 claims
- 3358US9064952B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2011·Granted Jun 23, 2015·1 cites·9 claims
- 3458US2023361171A1Field effect transistorDENSO CORP·Filed 2023·Application pending·0 cites
- 3557US2023387194A1Field effect transistor and method of manufacturing the sameDENSO CORP·Filed 2023·Application pending·0 cites
- 3657US2023369484A1Field effect transistorDENSO CORP·Filed 2023·Application pending·0 cites
- 3749US8809986B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2009·Granted Aug 19, 2014·0 cites·2 claims
- 3848US8933483B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2013·Granted Jan 13, 2015·0 cites·2 claims
- 3947US10522627B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·7 claims
- 4044US8878290B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2013·Granted Nov 4, 2014·0 cites·3 claims
- 4142US10153345B2Insulated gate switching device and method for manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2016·Granted Dec 11, 2018·0 cites·7 claims
- 4242US9276075B2Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the sameTAKAYA HIDEFUMI·Filed 2012·Granted Mar 1, 2016·0 cites·7 claims
- 4342US8518809B2Manufacturing method of silicon carbide single crystalWATANABE HIROKI·Filed 2011·Granted Aug 27, 2013·0 cites·18 claims
- 4441US2014191248A1Semiconductor deviceTAKAYA HIDEFUMI·Filed 2014·Application pending·0 cites
- 4540US10770579B2SiC-MOSFET and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted Sep 8, 2020·0 cites·9 claims
- 4639US2008087949A1Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 4738US2011203513A1Method of manufacturing silicon carbide substrateDENSO CORP·Filed 2011·Application pending·0 cites
- 4837US2012319136A1Silicon carbide semiconductor device and method for manufacturing the sameNOBORIO MASATO·Filed 2012·Application pending·0 cites
- 4937US2012181551A1Silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Application pending·0 cites
- 5035US2014175459A1Silicon carbide semiconductor device and method for manufacturing the sameYAMAMOTO KENSAKU·Filed 2012·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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