Inventor · disambiguated record
Jennifer K. Hite
Also filed as: HITE JENNIFER · HITE JENNIFER K
8 granted patents·2 pending applications·20 citations·filing 2010–2025
82Inventor score
Top patents by PatentIndex Score
10 records- 0193US11415518B2Mapping and evaluating GaN wafers for vertical device applicationsUS GOV SEC NAVY·Filed 2020·Granted Aug 16, 2022·3 cites·12 claims
- 0286US9111786B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Aug 18, 2015·4 cites·8 claims
- 0385US9018056B2Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Apr 28, 2015·4 cites·5 claims
- 0483US8679248B2GaN whiskers and methods of growing them from solutionFEIGELSON BORIS N·Filed 2010·Granted Mar 25, 2014·2 cites·9 claims
- 0581US9396941B2Method for vertical and lateral control of III-N polarityHITE JENNIFER K·Filed 2011·Granted Jul 19, 2016·7 cites·9 claims
- 0667US8999060B2Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperatureFEIGELSON BORIS N·Filed 2013·Granted Apr 7, 2015·0 cites·9 claims
- 0756US9105499B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2015·Granted Aug 11, 2015·0 cites·12 claims
- 0854US2025275205A1P-type spinel structures as a p-n heteroepitaxial interface to b-ga2o3US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 0952US9679766B2Method for vertical and lateral control of III-N polarityUS NAVY·Filed 2016·Granted Jun 13, 2017·0 cites·18 claims
- 1048US2021389126A1Surface Profile Mapping for Evaluating III-N Device Performance and YieldUS GOV SEC NAVY·Filed 2021·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →