Inventor · disambiguated record
Hsueh-I Huang
Also filed as: HUANG HSUEH-I
5 granted patents·1 pending application·20 citations·filing 2007–2014
74Inventor score
Top patents by PatentIndex Score
6 records- 0181US8897470B2Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unitHUANG HSUEH-I·Filed 2009·Granted Nov 25, 2014·12 cites·7 claims
- 0276US8017486B2Method of fabricating low on-resistance lateral double-diffused MOS deviceMACRONIX INT CO LTD·Filed 2007·Granted Sep 13, 2011·6 cites·8 claims
- 0365US9302904B2Method of fabricating integrated semiconductor device and structure thereofMACRONIX INT CO LTD·Filed 2014·Granted Apr 5, 2016·1 cites·5 claims
- 0457US8354716B2Semiconductor devices and methods of manufacturing the sameMACRONIX INT CO LTD·Filed 2010·Granted Jan 15, 2013·1 cites·15 claims
- 0545US8362558B2Low on-resistance lateral double-diffused MOS deviceMACRONIX INT CO LTD·Filed 2011·Granted Jan 29, 2013·0 cites·8 claims
- 0630US2012037989A1Ldmos having single-strip source contact and method for manufacturing sameHUANG HSUEH-I·Filed 2010·Application pending·0 cites
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