Inventor · disambiguated record
Wendell P. Noble
Also filed as: NOBLE JR WENDELL P · NOBLE WENDELL · NOBLE WENDELL P · NOBLE WENDELL P JR
189 granted patents·10 pending applications·13,639 citations·filing 1978–2010
99Inventor score
Files withMICRON TECHNOLOGY INC167IBM23MICRO TECHNOLOGY INC1MICRON TECHNOLOLGY INC1MICRON TECNOLOGY INC1
Top patents by PatentIndex Score
199 records- 0199US6689660B14 F2 folded bit line DRAM cell structure having buried bit and word linesMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 10, 2004·356 cites·41 claims
- 0299US6504201B1Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 7, 2003·215 cites·28 claims
- 0399US6492233B2Memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 10, 2002·154 cites·29 claims
- 0499US6399979B1Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 4, 2002·208 cites·35 claims
- 0599US6238976B1Method for forming high density flash memoryMICRON TECHNOLOGY INC·Filed 1998·Granted May 29, 2001·328 cites·15 claims
- 0699US6191448B1Memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 20, 2001·153 cites·55 claims
- 0799US6150687AMemory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 21, 2000·451 cites·24 claims
- 0899US6143636AHigh density flash memoryMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 7, 2000·323 cites·14 claims
- 0999US6072209AFour F2 folded bit line DRAM cell structure having buried bit and word linesMICRO TECHNOLOGY INC·Filed 1997·Granted Jun 6, 2000·395 cites·17 claims
- 1099US5991225AProgrammable memory address decode array with vertical transistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 23, 1999·319 cites·30 claims
- 1199US5977579ATrench dram cell with vertical device and buried word linesMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 2, 1999·423 cites·42 claims
- 1299US5973356AUltra high density flash memoryMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 26, 1999·352 cites·24 claims
- 1399US5936274AHigh density flash memoryMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 10, 1999·379 cites·21 claims
- 1499US5909618AMethod of making memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 1, 1999·353 cites·9 claims
- 1598US6818937B2Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 16, 2004·107 cites·27 claims
- 1698US6537871B2Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitorMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 25, 2003·145 cites·24 claims
- 1798US6492694B2Highly conductive composite polysilicon gate for CMOS integrated circuitsMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 10, 2002·192 cites·41 claims
- 1898US6483171B1Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming sameMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 19, 2002·260 cites·16 claims
- 1998US6448615B1Methods, structures, and circuits for transistors with gate-to-body capacitive couplingMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 10, 2002·207 cites·20 claims
- 2098US6376317B1Methods for dual-gated transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 23, 2002·230 cites·44 claims
- 2198US6225165B1High density SRAM cell with latched vertical transistorsMICRON TECHNOLOGY INC·Filed 1998·Granted May 1, 2001·188 cites·16 claims
- 2298US6124729AField programmable logic arrays with vertical transistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 26, 2000·240 cites·35 claims
- 2398US6104061AMemory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 15, 2000·207 cites·24 claims
- 2498US6097065ACircuits and methods for dual-gated transistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 1, 2000·234 cites·22 claims
- 2598US6066869ACircuit and method for a folded bit line memory cell with vertical transistor and trench capacitorMICRON TECHNOLOGY INC·Filed 1997·Granted May 23, 2000·223 cites·16 claims
- 2698US5907170ACircuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitorMICRON TECHNOLOGY INC·Filed 1997·Granted May 25, 1999·170 cites·17 claims
- 2797US6798009B2Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitorMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 28, 2004·71 cites·28 claims
- 2897US6476434B14 F2 folded bit line dram cell structure having buried bit and word linesMICRON TECNOLOGY INC·Filed 2000·Granted Nov 5, 2002·140 cites·27 claims
- 2997US6414356B1Circuits and methods for dual-gated transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 2, 2002·137 cites·28 claims
- 3097US6350635B1Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 26, 2002·153 cites·19 claims
- 3197US6320222B1Structure and method for reducing threshold voltage variations due to dopant fluctuationsMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 20, 2001·243 cites·22 claims
- 3297US6246083B1Vertical gain cell and array for a dynamic random access memoryMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 12, 2001·154 cites·19 claims
- 3397US6208164B1Programmable logic array with vertical transistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Mar 27, 2001·166 cites·30 claims
- 3497US6153468AMethod of forming a logic array for a decoderMICRON TECHNOLOLGY INC·Filed 1999·Granted Nov 28, 2000·196 cites·18 claims
- 3597US5987196ASemiconductor structure having an optical signal path in a substrate and method for forming the sameMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·229 cites·79 claims
- 3697US4380057AElectrically alterable double dense memoryIBM·Filed 1980·Granted Apr 12, 1983·170 cites·15 claims
- 3796US6624033B2Trench DRAM cell with vertical device and buried word linesMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 23, 2003·56 cites·19 claims
- 3896US6486027B1Field programmable logic arrays with vertical transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 26, 2002·102 cites·27 claims
- 3996US6337805B1Discrete devices including EAPROM transistor and NVRAM memory cell with edge defined ferroelectric capacitance, methods for operating same, and apparatuses including sameMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 8, 2002·138 cites·55 claims
- 4096US6104045AHigh density planar SRAM cell using bipolar latch-up and gated diode breakdownMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 15, 2000·145 cites·47 claims
- 4195US6960821B2Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> directionMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 1, 2005·58 cites·13 claims
- 4295US6764901B2Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitorMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 20, 2004·54 cites·40 claims
- 4395US6597037B1Programmable memory address decode array with vertical transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 22, 2003·80 cites·25 claims
- 4495US6515510B2Programmable logic array with vertical transistorsMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 4, 2003·84 cites·33 claims
- 4595US6294418B1Circuits and methods using vertical complementary transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 25, 2001·86 cites·34 claims
- 4695US6141238ADynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including sameMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·133 cites·61 claims
- 4795US5973352AUltra high density flash memory having vertically stacked devicesMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 26, 1999·129 cites·13 claims
- 4894US7883962B2Trench DRAM cell with vertical device and buried word linesMICRON TECHNOLOGY INC·Filed 2010·Granted Feb 8, 2011·12 cites·8 claims
- 4994US6696746B1Buried conductorsMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 24, 2004·132 cites·31 claims
- 5094US6680864B2Method for reading a vertical gain cell and array for a dynamic random access memoryMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 20, 2004·47 cites·20 claims
Showing the top 50 of 199 patent records by PatentIndex Score.
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