Inventor · disambiguated record
Chih-Wen Yao
Also filed as: YAO CHIH-WEN · YAO CHIH-WEN ALBERT
32 granted patents·5 pending applications·83 citations·filing 2006–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21TAIWAN SEMICONDUCTOR MFG7CHENG CHIH-CHANG3YAO CHIH-WEN2AU OPTRONICS CORP1
Top patents by PatentIndex Score
37 records- 0190US7642710B2Pixel structure for an OLED provided with a redundant active device connected to a pixel electrode and a current control unitAU OPTRONICS CORP·Filed 2006·Granted Jan 5, 2010·16 cites·17 claims
- 0289US2025359085A1Reduced surface field layer in varactorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0388US8445955B2Quasi-vertical structure for high voltage MOS deviceCHENG CHIH-CHANG·Filed 2010·Granted May 21, 2013·9 cites·14 claims
- 0487US8587073B2High voltage resistorCHENG CHIH-CHANG·Filed 2010·Granted Nov 19, 2013·8 cites·20 claims
- 0587US8461647B2Semiconductor device having multi-thickness gate dielectricCHOU HSUEH-LIANG·Filed 2010·Granted Jun 11, 2013·11 cites·13 claims
- 0685US12464738B2Integrated chip including a device with a reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 0783US8513712B2Method and apparatus for forming a semiconductor gateCHU CHEN-LIANG·Filed 2009·Granted Aug 20, 2013·9 cites·20 claims
- 0882US11088277B2Power MOSFETs structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·1 cites·20 claims
- 0981US10985256B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·1 cites·20 claims
- 1081US8507988B2High voltage devices, systems, and methods for forming the high voltage devicesYAO CHIH-WEN·Filed 2010·Granted Aug 13, 2013·9 cites·17 claims
- 1176US7928508B2Disconnected DPW structures for improving on-state performance of MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Apr 19, 2011·7 cites·20 claims
- 1273US11978810B2Method for forming an IC including a varactor with reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 1373US11967645B2Power MOSFETs structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 1472US9343465B2Integrated circuit for high-voltage device protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 17, 2016·2 cites·20 claims
- 1571US10686047B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 1670US11538914B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 1770US9871134B2Power MOSFETs and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·1 cites·20 claims
- 1870US8704312B2High voltage devices and methods of forming the high voltage devicesCHENG CHIH-CHANG·Filed 2010·Granted Apr 22, 2014·3 cites·20 claims
- 1966US8092268B2Repairing methods of pixel structure and organic electro-luminescence displaying unitYAO CHIH-WEN·Filed 2009·Granted Jan 10, 2012·3 cites·6 claims
- 2064US11018266B2Reduced surface field layer in varactorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·20 claims
- 2164US10672904B2Power MOSFETs and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 2260US10269954B2Power MOSFETs and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·0 cites·20 claims
- 2359US10680019B2Selective polysilicon doping for gate induced drain leakage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 9, 2020·0 cites·20 claims
- 2459US7781859B2Schottky diode structures having deep wells for improving breakdown voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 24, 2010·2 cites·15 claims
- 2559US2025194133A1Semiconductor structure having low on-resistance and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2656US2024258373A1Transistor device having a gate setback from a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2755US2024379845A1Transistor structure and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2854US9466681B2Method and apparatus for forming a semiconductor gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 11, 2016·0 cites·20 claims
- 2954US9070663B2Method and apparatus for forming a semiconductor gateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 30, 2015·0 cites·20 claims
- 3053US10381259B2Semiconductor device with localized carrier lifetime reduction and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 13, 2019·0 cites·16 claims
- 3153US9224827B2High voltage resistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 29, 2015·0 cites·20 claims
- 3252US8779505B2Quasi-vertical structure for high voltage MOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 15, 2014·0 cites·20 claims
- 3351US10276596B2Selective polysilicon doping for gate induced drain leakage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 30, 2019·0 cites·20 claims
- 3451US9224732B2Method of forming high voltage deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·0 cites·20 claims
- 3550US9698044B2Localized carrier lifetime reductionKALNITSKY ALEX·Filed 2011·Granted Jul 4, 2017·0 cites·20 claims
- 3643US10164037B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 3735US2011260245A1Cost Effective Global Isolation and Power Dissipation For Power Integrated Circuit DeviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
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