Inventor · disambiguated record
Paul Gondcharton
Also filed as: GONDCHARTON PAUL
9 granted patents·1 pending application·1 citations·filing 2014–2017
74Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE10
Top patents by PatentIndex Score
10 records- 0161US10115698B2Method for direct adhesion via low-roughness metal layersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Oct 30, 2018·1 cites·13 claims
- 0246US10032742B2Method for obtaining a bonding surface for direct bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jul 24, 2018·0 cites·15 claims
- 0344US9472530B2Method for carrying out a conductive direct metal bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Oct 18, 2016·0 cites·18 claims
- 0443US10679963B2Method for assembling two substrates of different natures via a ductile intermediate layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jun 9, 2020·0 cites·19 claims
- 0542US10483111B2Metal-metal direct bonding methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Nov 19, 2019·0 cites·16 claims
- 0640US10403597B2Direct bonding methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Sep 3, 2019·0 cites·15 claims
- 0740US9735038B2Process for manufacturing a semiconductor structure with temporary bonding via metal layersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Aug 15, 2017·0 cites·18 claims
- 0839US10710192B2Method for adhering a first structure and a second structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jul 14, 2020·0 cites·11 claims
- 0935US9922953B2Process for producing a structure by assembling at least two elements by direct adhesive bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Mar 20, 2018·0 cites·17 claims
- 1031US2017213807A1Tungsten layer passivation process and direct bonding processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →