Inventor · disambiguated record
Shiro Kamohara
Also filed as: KAMOHARA SHIRO
21 granted patents·5 pending applications·170 citations·filing 2000–2024
95Inventor score
Top patents by PatentIndex Score
26 records- 0191US11391389B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2020·Granted Jul 19, 2022·3 cites·17 claims
- 0290US11676655B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2022·Granted Jun 13, 2023·1 cites·6 claims
- 0389US6528848B1Semiconductor device and a method of manufacturing the sameHITACHI LTD·Filed 2000·Granted Mar 4, 2003·35 cites·50 claims
- 0487US9646679B2Semiconductor device with mode designation and substrate bias circuitsRENESAS ELECTRONICS CORP·Filed 2015·Granted May 9, 2017·6 cites·1 claims
- 0586US6605842B2Semiconductor device and a method of manufacturing the sameHITACHI LTD·Filed 2002·Granted Aug 12, 2003·26 cites·9 claims
- 0685US6881597B2Method of manufacturing a semiconductor device to provide a plurality of test element groups (TEGs) in a scribe regionRENESAS TECH CORP·Filed 2002·Granted Apr 19, 2005·39 cites·6 claims
- 0781US10311943B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·3 cites·8 claims
- 0879US9959924B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted May 1, 2018·3 cites·7 claims
- 0978US11373700B2Semiconductor integrated circuit device with SOTE and MOS transistorsRENESAS ELECTRONICS CORP·Filed 2019·Granted Jun 28, 2022·1 cites·11 claims
- 1077US2024363750A1Semiconductor device including field effect transistor formed on soi substrateRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1174US8482058B2Semiconductor device including a power MISFETHOSHINO YUTAKA·Filed 2012·Granted Jul 9, 2013·2 cites·6 claims
- 1271US2022406936A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1368US8232595B2Semiconductor device including a power MISFET and method of manufacturing the sameHOSHINO YUTAKA·Filed 2011·Granted Jul 31, 2012·1 cites·4 claims
- 1467US6677194B2Method of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 2002·Granted Jan 13, 2004·11 cites·22 claims
- 1565US6797594B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Sep 28, 2004·7 cites·14 claims
- 1665US6734114B2Method for manufacturing semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2002·Granted May 11, 2004·10 cites·14 claims
- 1760US7180768B2Semiconductor memory device including 4TSRAMsRENESAS TECH CORP·Filed 2004·Granted Feb 20, 2007·7 cites·10 claims
- 1858US7982263B2Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrateRENESAS ELECTRONICS CORP·Filed 2009·Granted Jul 19, 2011·0 cites·3 claims
- 1958US7176523B2Power mosfet having conductor plug structured contactsRENESAS TECH CORP·Filed 2004·Granted Feb 13, 2007·4 cites·29 claims
- 2057US6600181B2Semiconductor integrated circuit and designing method thereofHITACHI LTD·Filed 2001·Granted Jul 29, 2003·11 cites·9 claims
- 2152US2007114606A1Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 2252US2020313000A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2344US11665640B2IoT edge moduleRENESAS ELECTRONICS CORP·Filed 2021·Granted May 30, 2023·0 cites·14 claims
- 2438US7067889B2Method for manufacturing semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2003·Granted Jun 27, 2006·0 cites·27 claims
- 2537US10014067B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Jul 3, 2018·0 cites·14 claims
- 2631US2006133146A1Semiconductor device and a method of manufacturing the sameMAEKAWA KEIICHI·Filed 2005·Application pending·0 cites
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