Inventor · disambiguated record
Xin Lin
Also filed as: LIN XIN · LIN XIN-HUNG
110 granted patents·10 pending applications·395 citations·filing 2002–2025
99Inventor score
Top patents by PatentIndex Score
120 records- 0196US10944001B1Deep trench and junction hybrid isolationNXP USA INC·Filed 2020·Granted Mar 9, 2021·5 cites·20 claims
- 0296US9905687B1Semiconductor device and method of makingNXP USA INC·Filed 2017·Granted Feb 27, 2018·21 cites·20 claims
- 0395US9941350B1Semiconductor device isolation via depleted coupling layerNXP USA INC·Filed 2017·Granted Apr 10, 2018·13 cites·16 claims
- 0495US9306060B1Semiconductor devices and related fabrication methodsYANG HONGNING·Filed 2014·Granted Apr 5, 2016·19 cites·20 claims
- 0594US9761707B1Laterally diffused MOSFET with isolation regionFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Sep 12, 2017·13 cites·20 claims
- 0694US9614074B1Partial, self-biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Apr 4, 2017·13 cites·17 claims
- 0794US9508845B1LDMOS device with high-potential-biased isolation ringFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 29, 2016·14 cites·20 claims
- 0893US9831338B1Alternating source region arrangementNXP USA INC·Filed 2017·Granted Nov 28, 2017·8 cites·24 claims
- 0993US8575692B2Near zero channel length field drift LDMOSYANG HONGNING·Filed 2011·Granted Nov 5, 2013·14 cites·19 claims
- 1093US8198703B2Zener diode with reduced substrate currentLIN XIN·Filed 2010·Granted Jun 12, 2012·19 cites·16 claims
- 1192US12412010B1Method for constructing digital twin system for additive manufacturing process with lifecycle data managementUNIV WUHAN SCIENCE & TECH·Filed 2025·Granted Sep 9, 2025·9 cites·10 claims
- 1292US9590097B2Semiconductor devices and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 7, 2017·7 cites·20 claims
- 1392US9165918B1Composite semiconductor device with multiple threshold voltagesYANG HONGNING·Filed 2014·Granted Oct 20, 2015·17 cites·20 claims
- 1490US9543454B1Diodes with multiple junctionsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jan 10, 2017·6 cites·15 claims
- 1588US10505437B2Power converting device and ground impedance value detecting methodDELTA ELECTRONICS INC·Filed 2017·Granted Dec 10, 2019·8 cites·17 claims
- 1688US9728600B2Partially biased isolation in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Aug 8, 2017·5 cites·19 claims
- 1788US9680011B2Self-adjusted isolation bias in semiconductor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·20 claims
- 1887US9871135B2Semiconductor device and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Jan 16, 2018·5 cites·9 claims
- 1987US9018673B2Zener diode device and fabricationCHEN WEIZE·Filed 2012·Granted Apr 28, 2015·9 cites·17 claims
- 2087US8669640B2Bipolar transistorLIN XIN·Filed 2009·Granted Mar 11, 2014·12 cites·20 claims
- 2186US8344443B2Single poly NVM devices and arraysFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jan 1, 2013·13 cites·20 claims
- 2285US9136323B2Drain-end drift diminution in semiconductor devicesYANG HONGNING·Filed 2014·Granted Sep 15, 2015·6 cites·20 claims
- 2385US8853780B2Semiconductor device with drain-end drift diminutionYANG HONGNING·Filed 2012·Granted Oct 7, 2014·7 cites·19 claims
- 2485US8735950B2Tunable schottky diode with depleted conduction pathCHEN WEIZE·Filed 2012·Granted May 27, 2014·7 cites·19 claims
- 2582US10297676B2Partially biased isolation in semiconductor deviceNXP USA INC·Filed 2016·Granted May 21, 2019·4 cites·19 claims
- 2682US9906134B1Insulation detecting circuit, power converting device and insulation impedance value detecting methodDELTA ELECTRONICS INC·Filed 2017·Granted Feb 27, 2018·4 cites·20 claims
- 2782US9490322B2Semiconductor device with enhanced 3D resurfYANG HONGNING·Filed 2013·Granted Nov 8, 2016·5 cites·20 claims
- 2879US8847358B2Bipolar transistorLIN XIN·Filed 2012·Granted Sep 30, 2014·4 cites·13 claims
- 2979US7915704B2Schottky diodeFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Mar 29, 2011·8 cites·17 claims
- 3078US10834857B2Inverter device having heat dissipation mechanismDELTA ELECTRONICS INC·Filed 2019·Granted Nov 10, 2020·2 cites·12 claims
- 3178US10177252B2Semiconductor device isolation with RESURF layer arrangementNXP USA INC·Filed 2016·Granted Jan 8, 2019·2 cites·12 claims
- 3278US9742082B1Connection structure of electronic components and circuit boardDELTA ELECTRONICS INC·Filed 2017·Granted Aug 22, 2017·3 cites·15 claims
- 3378US9105657B2Methods for producing near zero channel length field drift LDMOSYANG HONGNING·Filed 2013·Granted Aug 11, 2015·3 cites·20 claims
- 3478US9093567B2Diodes with multiple junctions and fabrication methods thereforLIN XIN·Filed 2013·Granted Jul 28, 2015·3 cites·14 claims
- 3577US7211477B2High voltage field effect device and methodFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·6 cites·6 claims
- 3677US6787858B2Carrier injection protection structureFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 7, 2004·25 cites·13 claims
- 3775US7910441B2Multi-gate semiconductor device and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 22, 2011·5 cites·8 claims
- 3874USD817275SInverterDELTA ELECTRONICS INC·Filed 2017·Granted May 8, 2018·16 cites·1 claims
- 3974US8946041B2Methods for forming high gain tunable bipolar transistorsLIN XIN·Filed 2012·Granted Feb 3, 2015·3 cites·20 claims
- 4074US8384193B2Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gainFREESCALE SEMICONDUCTOR INC·Filed 2011·Granted Feb 26, 2013·3 cites·11 claims
- 4174US8227861B2Multi-gate semiconductor devicesYANG HONGNING·Filed 2010·Granted Jul 24, 2012·4 cites·16 claims
- 4274US2023154664A1Connection structure of inductive elementDELTA ELECTRONICS INC·Filed 2023·Application pending·0 cites
- 4373US9543379B2Semiconductor device with peripheral breakdown protectionYANG HONGNING·Filed 2014·Granted Jan 10, 2017·3 cites·18 claims
- 4473US8212292B2High gain tunable bipolar transistorLIN XIN·Filed 2009·Granted Jul 3, 2012·5 cites·16 claims
- 4572US7972913B2Method for forming a Schottky diodeFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jul 5, 2011·4 cites·20 claims
- 4671US10681833B1Mounting assembly and inverter assembly using sameDELTA ELECTRONICS INC·Filed 2019·Granted Jun 9, 2020·1 cites·17 claims
- 4770US10418483B2Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layersNXP BV·Filed 2017·Granted Sep 17, 2019·1 cites·19 claims
- 4870US8946862B2Methods for forming bipolar transistorsFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Feb 3, 2015·2 cites·20 claims
- 4970US7301187B2High voltage field effect device and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Nov 27, 2007·4 cites·14 claims
- 5068US10825717B1Method for making high voltage transistors insensitive to needle defects in shallow trench isolationNXP BV·Filed 2019·Granted Nov 3, 2020·1 cites·20 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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