Inventor · disambiguated record
Sang Min Yoo
Also filed as: YOO SANG MIN
10 granted patents·1 pending application·14 citations·filing 2018–2024
84Inventor score
Files withSAMSUNG ELECTRONICS CO LTD11
Top patents by PatentIndex Score
11 records- 0194US11101269B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·4 cites·20 claims
- 0292US11784186B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 10, 2023·2 cites·20 claims
- 0388US11380687B2Semiconductor devices including diffusion break regionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 5, 2022·2 cites·10 claims
- 0486US10910376B2Semiconductor devices including diffusion break regionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·4 cites·18 claims
- 0586US2025126882A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0682US10804265B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
- 0781US12183734B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0863US11538807B2Method for fabricating a semiconductor device including a gate structure with an inclined side wallSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·10 claims
- 0957US11011519B2Semiconductor device including gate structure having device isolation filmSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 18, 2021·0 cites·20 claims
- 1047US11063150B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·19 claims
- 1144US10636793B2FINFETs having electrically insulating diffusion break regions therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·18 claims
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