Inventor · disambiguated record
Steffen Marschmeyer
Also filed as: MARSCHMEYER STEFFEN
4 granted patents·32 citations·filing 2005–2017
73Inventor score
Files withFOX ALEXANDER1IHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIVE MIKRO1IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ INST FUR INNOVATIVE MIKROE1IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MI1
Top patents by PatentIndex Score
4 records- 0181US8933537B2Bipolar transistor having self-adjusted emitter contactFOX ALEXANDER·Filed 2009·Granted Jan 13, 2015·12 cites·9 claims
- 0281US7880270B2Vertical bipolar transistorIHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIVE MIKRO·Filed 2005·Granted Feb 1, 2011·17 cites·25 claims
- 0366US9508824B2Method for fabricating a bipolar transistor having self-aligned emitter contactIHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MI·Filed 2014·Granted Nov 29, 2016·2 cites·17 claims
- 0458US10832953B2Technological method for preventing, by means of buried etch stop layers, the creation of vertical/lateral inhomogeneities when etching through-silicon viasIHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ INST FUR INNOVATIVE MIKROE·Filed 2017·Granted Nov 10, 2020·1 cites·12 claims
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