Inventor · disambiguated record
Nirmal Chaudhary
Also filed as: CHAUDHARY NIRMAL
11 granted patents·238 citations·filing 1997–2017
91Inventor score
Files withINFINEON TECHNOLOGIES AG4INFINEON TECHNOLOGIES CORP2CHAUDHARY NIRMAL1LI HONG-JYH1SIEMENS AG1
Top patents by PatentIndex Score
11 records- 0196US6921691B1Transistor with dopant-bearing metal in source and drainINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 26, 2005·117 cites·29 claims
- 0289US7094650B2Gate electrode for FinFET deviceTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 22, 2006·20 cites·20 claims
- 0384US6184134B1Dry process for cleaning residues/polymers after metal etchINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Feb 6, 2001·33 cites·12 claims
- 0480US6486015B1Low temperature carbon rich oxy-nitride for improved RIE selectivityINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 26, 2002·26 cites·6 claims
- 0576US10559594B2Approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistorsTARAKJI AHMAD·Filed 2017·Granted Feb 11, 2020·4 cites·2 claims
- 0676US7446379B2Transistor with dopant-bearing metal in source and drainINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 4, 2008·4 cites·14 claims
- 0773US8085518B2Electronic circuit, electronic circuit arrangement and method for producing an electronic circuitCHAUDHARY NIRMAL·Filed 2006·Granted Dec 27, 2011·9 cites·46 claims
- 0862US6551874B2Self-aligned STI process using nitride hard maskINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 22, 2003·12 cites·21 claims
- 0957US8390080B2Transistor with dopant-bearing metal in source and drainLI HONG-JYH·Filed 2008·Granted Mar 5, 2013·0 cites·20 claims
- 1048US6365328B1Semiconductor structure and manufacturing methodINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Apr 2, 2002·3 cites·7 claims
- 1142US6232233B1Methods for performing planarization and recess etches and apparatus thereforSIEMENS AG·Filed 1997·Granted May 15, 2001·10 cites·20 claims
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