Inventor · disambiguated record
Sylvain Maitrejean
Also filed as: MAITREJEAN SYLVAIN
23 granted patents·1 pending application·19 citations·filing 2004–2021
91Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE16ST MICROELECTRONICS INC2ALCHIMER S A 15 RUE DU BUISSON1AMS AG1COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT1
Top patents by PatentIndex Score
24 records- 0184US11694991B2Method for transferring chipsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Jul 4, 2023·1 cites·16 claims
- 0284US9853124B2Method for fabricating a nanowire semiconductor transistor having an auto-aligned gate and spacersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 26, 2017·4 cites·14 claims
- 0384US9502558B2Local strain generation in an SOI substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Nov 22, 2016·4 cites·9 claims
- 0477US11195711B2Healing method before transfer of a semiconducting layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Dec 7, 2021·1 cites·16 claims
- 0576US10600786B2Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 24, 2020·2 cites·8 claims
- 0676US9704709B2Method for causing tensile strain in a semiconductor filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jul 11, 2017·2 cites·14 claims
- 0773US9230991B2Method to co-integrate oppositely strained semiconductor devices on a same substrateST MICROELECTRONICS INC·Filed 2014·Granted Jan 5, 2016·2 cites·13 claims
- 0871US9761607B2Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrateCOMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2014·Granted Sep 12, 2017·2 cites·10 claims
- 0966US12198940B2Method for modifying the strain state of a block of a semiconducting materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jan 14, 2025·0 cites·13 claims
- 1065US9536951B2FinFET transistor comprising portions of SiGe with a crystal orientation [111]COMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jan 3, 2017·1 cites·14 claims
- 1160US11688811B2Transistor comprising a channel placed under shear strain and fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jun 27, 2023·0 cites·6 claims
- 1257US10879083B2Method for modifying the strain state of a block of a semiconducting materialCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2014·Granted Dec 29, 2020·0 cites·11 claims
- 1353US11081463B2Bonding method with electron-stimulated desorptionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Aug 3, 2021·0 cites·10 claims
- 1451US10978594B2Transistor comprising a channel placed under shear strain and fabrication processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Apr 13, 2021·0 cites·13 claims
- 1550US9460971B2Method to co-integrate oppositely strained semiconductor devices on a same substrateST MICROELECTRONICS INC·Filed 2015·Granted Oct 4, 2016·0 cites·37 claims
- 1647US11810789B2Method of fabricating a semiconductor substrate having a stressed semiconductor regionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Nov 7, 2023·0 cites·20 claims
- 1742US12322717B2Semiconductor device and method for manufacturing a semiconductor deviceAMS AG·Filed 2020·Granted Jun 3, 2025·0 cites·17 claims
- 1840US11424121B2Method for forming a layer by cyclic epitaxyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Aug 23, 2022·0 cites·21 claims
- 1940US8847395B2Microelectronic device having metal interconnection levels connected by programmable viasERNST THOMAS·Filed 2011·Granted Sep 30, 2014·0 cites·12 claims
- 2038US10665497B2Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted May 26, 2020·0 cites·8 claims
- 2138US8114777B2Horizontal nanotube/nanofiber growth methodPASSEMARD GERARD·Filed 2008·Granted Feb 14, 2012·0 cites·8 claims
- 2237US9853130B2Method of modifying the strain state of a semiconducting structure with stacked transistor channelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 26, 2017·0 cites·10 claims
- 2334US8367547B2Method for creating a metal crystalline region, in particular in an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2010·Granted Feb 5, 2013·0 cites·20 claims
- 2431US2006211236A1Surface-coating method, production of microelectronic interconnections using said method and integrated circuitsALCHIMER S A 15 RUE DU BUISSON·Filed 2004·Application pending·0 cites
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