Inventor · disambiguated record
Deok-Kee Kim
Also filed as: KIM DEOK-KEE
73 granted patents·24 pending applications·627 citations·filing 2001–2019
99Inventor score
Top patents by PatentIndex Score
97 records- 0197US7411818B1Programmable fuse/non-volatile memory structures using externally heated phase change materialIBM·Filed 2007·Granted Aug 12, 2008·50 cites·5 claims
- 0296US7714326B2Electrical antifuse with integrated sensorIBM·Filed 2007·Granted May 11, 2010·47 cites·20 claims
- 0395US8299570B2Efuse containing sige stackKIM DEOK-KEE·Filed 2011·Granted Oct 30, 2012·21 cites·13 claims
- 0492US7633079B2Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change materialIBM·Filed 2007·Granted Dec 15, 2009·26 cites·20 claims
- 0588US7723820B2Transistor based antifuse with integrated heating elementIBM·Filed 2006·Granted May 25, 2010·17 cites·8 claims
- 0688US7432755B1Programming current stabilized electrical fuse programming circuit and methodIBM·Filed 2007·Granted Oct 7, 2008·20 cites·2 claims
- 0787US8159040B2Metal gate integration structure and method including metal fuse, anti-fuse and/or resistorCOOLBAUGH DOUGLAS D·Filed 2008·Granted Apr 17, 2012·15 cites·21 claims
- 0886US8574975B2Semiconductor devices having e-fuse structures and methods of fabricating the sameKIM DEOK-KEE·Filed 2013·Granted Nov 5, 2013·6 cites·12 claims
- 0986US7750335B2Phase change material structure and related methodIBM·Filed 2007·Granted Jul 6, 2010·16 cites·11 claims
- 1086US7153737B2Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retentionIBM·Filed 2005·Granted Dec 26, 2006·11 cites·2 claims
- 1185US6884715B1Method for forming a self-aligned contact with a silicide or damascene conductor and the structure formed therebyIBM·Filed 2004·Granted Apr 26, 2005·40 cites·19 claims
- 1284US8004059B2eFuse containing SiGe stackIBM·Filed 2007·Granted Aug 23, 2011·10 cites·17 claims
- 1384US7851885B2Methods and systems involving electrically programmable fusesIBM·Filed 2007·Granted Dec 14, 2010·11 cites·9 claims
- 1484US7353188B2Product selling system and method for operating the sameLG ELECTRONICS·Filed 2001·Granted Apr 1, 2008·61 cites·37 claims
- 1583US7960809B2eFuse with partial SiGe layer and design structure thereforIBM·Filed 2009·Granted Jun 14, 2011·10 cites·20 claims
- 1683US7785937B2Electrical fuse having sublithographic cavities thereuponIBM·Filed 2009·Granted Aug 31, 2010·9 cites·7 claims
- 1782US8349665B2Fuse devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 8, 2013·5 cites·16 claims
- 1881US8559207B2Variable resistance memory device with trigger circuit for set/reset write operationsKIM DEOK-KEE·Filed 2011·Granted Oct 15, 2013·6 cites·18 claims
- 1981US8247788B2Nonvolatile memory deviceSEOL KWANG-SOO·Filed 2010·Granted Aug 21, 2012·5 cites·20 claims
- 2081US7777297B2Non-planar fuse structure including angular bendIBM·Filed 2007·Granted Aug 17, 2010·9 cites·16 claims
- 2181US7732893B2Electrical fuse structure for higher post-programming resistanceIBM·Filed 2007·Granted Jun 8, 2010·10 cites·20 claims
- 2280US7193262B2Low-cost deep trench decoupling capacitor device and process of manufactureIBM·Filed 2004·Granted Mar 20, 2007·26 cites·16 claims
- 2379US8471232B2Resistive memory devices including vertical transistor arrays and related fabrication methodsKIM DEOK-KEE·Filed 2010·Granted Jun 25, 2013·6 cites·20 claims
- 2479US7729164B2Non-volatile memory device, method of operating the same, and method of fabricating the sameSAMSUNG ELCTRONICS CO LTD·Filed 2008·Granted Jun 1, 2010·7 cites·38 claims
- 2579US7521763B2Dual stress STIIBM·Filed 2007·Granted Apr 21, 2009·14 cites·15 claims
- 2679US7479689B2Electronically programmable fuse having anode and link surrounded by low dielectric constant materialIBM·Filed 2007·Granted Jan 20, 2009·8 cites·9 claims
- 2779US7195972B2Trench capacitor DRAM cell using buried oxide as array top oxideIBM·Filed 2004·Granted Mar 27, 2007·20 cites·22 claims
- 2878US7943493B2Electrical fuse having a fully silicided fuselink and enhanced flux divergenceIBM·Filed 2010·Granted May 17, 2011·4 cites·9 claims
- 2978US7675137B2Electrical fuse having sublithographic cavities thereuponIBM·Filed 2007·Granted Mar 9, 2010·6 cites·13 claims
- 3078US7485910B2Simplified vertical array device DRAM/eDRAM integration: method and structureIBM·Filed 2005·Granted Feb 3, 2009·7 cites·17 claims
- 3177US7745855B2Single crystal fuse on air in bulk siliconIBM·Filed 2007·Granted Jun 29, 2010·7 cites·8 claims
- 3277US7345904B1Method for programming an electronically programmable semiconductor fuseIBM·Filed 2006·Granted Mar 18, 2008·7 cites·9 claims
- 3376US6787838B1Trench capacitor DRAM cell using buried oxide as array top oxideIBM·Filed 2003·Granted Sep 7, 2004·17 cites·8 claims
- 3474US7564086B2Self-aligned, silicided, trench-based DRAM/eDRAM processes with improved retentionIBM·Filed 2006·Granted Jul 21, 2009·5 cites·5 claims
- 3573US8963284B2Semiconductor devices having E-fuse structures and methods of fabricating the sameKIM DEOK-KEE·Filed 2013·Granted Feb 24, 2015·2 cites·9 claims
- 3673US7825490B2Electrical fuse having a cavity thereuponIBM·Filed 2007·Granted Nov 2, 2010·5 cites·12 claims
- 3772US8426943B2Semiconductor device having e-fuse structure and method of fabricating the sameKIM DEOK-KEE·Filed 2011·Granted Apr 23, 2013·2 cites·17 claims
- 3872US8004060B2Metal gate compatible electrical antifuseIBM·Filed 2007·Granted Aug 23, 2011·5 cites·8 claims
- 3972US7713792B2Fuse structure including monocrystalline semiconductor material layer and gapIBM·Filed 2007·Granted May 11, 2010·5 cites·11 claims
- 4071US8526258B2Variable resistance memory device and related method of operationKIM DEOK-KEE·Filed 2011·Granted Sep 3, 2013·4 cites·16 claims
- 4170US7709928B2Electromigration fuse and method of fabricating sameIBM·Filed 2007·Granted May 4, 2010·4 cites·20 claims
- 4270US7550323B2Electrical fuse with a thinned fuselink middle portionIBM·Filed 2007·Granted Jun 23, 2009·4 cites·11 claims
- 4369US8674475B2Antifuse and methods of operating and manufacturing the sameKIM DEOK-KEE·Filed 2009·Granted Mar 18, 2014·4 cites·19 claims
- 4469US7834387B2Metal gate compatible flash memory gate stackIBM·Filed 2008·Granted Nov 16, 2010·4 cites·12 claims
- 4569US7566593B2Fuse structure including cavity and methods for fabrication thereofIBM·Filed 2006·Granted Jul 28, 2009·4 cites·1 claims
- 4667US7682922B2Post STI trench capacitorIBM·Filed 2007·Granted Mar 23, 2010·3 cites·9 claims
- 4767US6830968B1Simplified top oxide late processIBM·Filed 2003·Granted Dec 14, 2004·10 cites·19 claims
- 4866US7497959B2Methods and structures for protecting one area while processing another area on a chipIBM·Filed 2004·Granted Mar 3, 2009·7 cites·10 claims
- 4965US7838963B2Electrical fuse having a fully silicided fuselink and enhanced flux divergenceIBM·Filed 2007·Granted Nov 23, 2010·2 cites·16 claims
- 5064US8624331B2Non-volatile memory devices, methods of manufacturing and methods of operating the sameKIM DEOK-KEE·Filed 2010·Granted Jan 7, 2014·1 cites·20 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →