Inventor · disambiguated record
Erwin Hammerl
Also filed as: HAMMERL ERWIN · HAMMERL ERWIN N
20 granted patents·1,307 citations·filing 1994–2001
97Inventor score
Top patents by PatentIndex Score
20 records- 0196US5447884AShallow trench isolation with thin nitride linerIBM·Filed 1994·Granted Sep 5, 1995·264 cites·9 claims
- 0295US5763315AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Jun 9, 1998·199 cites·9 claims
- 0394US6046487AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Apr 4, 2000·169 cites·4 claims
- 0492US5827765ABuried-strap formation in a dram trench capacitorSIEMENS AG·Filed 1996·Granted Oct 27, 1998·81 cites·26 claims
- 0590US5670805AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Sep 23, 1997·59 cites·1 claims
- 0685US5543348AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Aug 6, 1996·47 cites·15 claims
- 0783US6140208AShallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applicationsIBM·Filed 1999·Granted Oct 31, 2000·72 cites·65 claims
- 0879US5792685AThree-dimensional device layout having a trench capacitorSIEMENS AG·Filed 1996·Granted Aug 11, 1998·39 cites·1 claims
- 0979US5674769AProcess for forming deep trench DRAMs with sub-groundrule gatesSIEMENS AG·Filed 1996·Granted Oct 7, 1997·39 cites·24 claims
- 1078US5656535AStorage node process for deep trench-based DRAMSIEMENS AG·Filed 1996·Granted Aug 12, 1997·42 cites·20 claims
- 1177US5844266ABuried strap formation in a DRAM trench capacitorSIEMENS AG·Filed 1997·Granted Dec 1, 1998·32 cites·5 claims
- 1275US5893735AThree-dimensional device layout with sub-groundrule featuresSIEMENS AG·Filed 1996·Granted Apr 13, 1999·34 cites·1 claims
- 1375US5747866AApplication of thin crystalline Si3 N4 liners in shallow trench isolation (STI) structuresSIEMENS AG·Filed 1997·Granted May 5, 1998·41 cites·13 claims
- 1475US5643823AApplication of thin crystalline Si3 N4 liners in shallow trench isolation (STI) structuresSIEMENS AG·Filed 1995·Granted Jul 1, 1997·45 cites·5 claims
- 1574US5937292ANitride cap formation in a DRAM trench capacitorIBM·Filed 1996·Granted Aug 10, 1999·30 cites·15 claims
- 1670US6153474AMethod of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrateIBM·Filed 1998·Granted Nov 28, 2000·28 cites·18 claims
- 1770US5717628ANitride cap formation in a DRAM trench capacitorSIEMENS AG·Filed 1996·Granted Feb 10, 1998·26 cites·6 claims
- 1867US5899724AMethod for fabricating a titanium resistorIBM·Filed 1996·Granted May 4, 1999·26 cites·14 claims
- 1966US5828076AMicroelectronic component and process for its productionSIEMENS AG·Filed 1995·Granted Oct 27, 1998·32 cites·5 claims
- 2035US6560731B2Method for checking the functioning of memory cells of an integrated semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 6, 2003·2 cites·6 claims
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