Inventor · disambiguated record
James D. Beasom
Also filed as: BEASOM JAMES D · BEASOM JAMES DOUGLAS
125 granted patents·3 pending applications·2,419 citations·filing 1972–2013
99Inventor score
Top patents by PatentIndex Score
128 records- 0197US5770878ATrench MOS gate deviceHARRIS CORP·Filed 1996·Granted Jun 23, 1998·175 cites·16 claims
- 0296US6368920B1Trench MOS gate deviceFAIRCHILD SEMICONDUCTOR·Filed 1998·Granted Apr 9, 2002·140 cites·18 claims
- 0394US6894349B2Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxideINTERSIL INC·Filed 2002·Granted May 17, 2005·74 cites·31 claims
- 0492US5264719AHigh voltage lateral semiconductor deviceHARRIS CORP·Filed 1991·Granted Nov 23, 1993·105 cites·42 claims
- 0592US4120707AProcess of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusionHARRIS CORP·Filed 1977·Granted Oct 17, 1978·47 cites·14 claims
- 0691US6822314B2Base for a NPN bipolar transistorINTERSIL INC·Filed 2002·Granted Nov 23, 2004·47 cites·13 claims
- 0791US5668397AHigh frequency analog transistors, method of fabrication and circuit implementationHARRIS CORP·Filed 1993·Granted Sep 16, 1997·95 cites·40 claims
- 0890US7285475B2Integrated circuit having a device wafer with a diffused doped backside layerINTERSIL INC·Filed 2005·Granted Oct 23, 2007·12 cites·16 claims
- 0990US5801084ABonded wafer processingHARRIS CORP·Filed 1997·Granted Sep 1, 1998·95 cites·4 claims
- 1090US5436189ASelf-aligned channel stop for trench-isolated islandHARRIS CORP·Filed 1993·Granted Jul 25, 1995·100 cites·11 claims
- 1189US5892264AHigh frequency analog transistors, method of fabrication and circuit implementationHARRIS CORP·Filed 1997·Granted Apr 6, 1999·99 cites·14 claims
- 1288US5338960AFormation of dual polarity source/drain extensions in lateral complementary channel MOS architecturesHARRIS CORP·Filed 1992·Granted Aug 16, 1994·75 cites·28 claims
- 1388US4567385APower switched logic gatesHARRIS CORP·Filed 1983·Granted Jan 28, 1986·34 cites·25 claims
- 1488US4210875AIntegrated amplifier with adjustable offset voltageHARRIS CORP·Filed 1978·Granted Jul 1, 1980·34 cites·25 claims
- 1587US6902967B2Integrated circuit with a MOS structure having reduced parasitic bipolar transistor actionINTERSIL INC·Filed 2004·Granted Jun 7, 2005·34 cites·55 claims
- 1684US5780311Abonded wafer processingHARRIS CORP·Filed 1997·Granted Jul 14, 1998·60 cites·6 claims
- 1782US6974753B2Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regionsINTERSIL INC·Filed 2004·Granted Dec 13, 2005·17 cites·45 claims
- 1881US5493207AVoltage divider and use as bias network for stacked transistorsHARRIS CORP·Filed 1993·Granted Feb 20, 1996·33 cites·15 claims
- 1981US4823173AHigh voltage lateral MOS structure with depleted top gate regionHARRIS CORP·Filed 1986·Granted Apr 18, 1989·38 cites·19 claims
- 2080US4975751AHigh breakdown active device structure with low series resistanceHARRIS CORP·Filed 1988·Granted Dec 4, 1990·36 cites·11 claims
- 2179US7341958B2Integrated process for thin film resistors with silicidesINTERSIL INC·Filed 2005·Granted Mar 11, 2008·5 cites·22 claims
- 2279US7161223B2Integrated circuit with a PN junction diodeINTERSIL INC·Filed 2004·Granted Jan 9, 2007·14 cites·9 claims
- 2378US5807780AHigh frequency analog transistors method of fabrication and circuit implementationHARRIS CORP·Filed 1995·Granted Sep 15, 1998·38 cites·32 claims
- 2478US4694313AConductivity modulated semiconductor structureHARRIS CORP·Filed 1985·Granted Sep 15, 1987·34 cites·33 claims
- 2577US7385246B2Depletable cathode low charge storage diodeINTERSIL INC·Filed 2006·Granted Jun 10, 2008·5 cites·49 claims
- 2676US7829954B2PMOS depletable drain extension made from NMOS dual depletable drain extensionsINTERSIL INC·Filed 2009·Granted Nov 9, 2010·4 cites·19 claims
- 2776US7285469B2Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columnsINTERSIL INC·Filed 2005·Granted Oct 23, 2007·4 cites·14 claims
- 2876US4876579ALow top gate resistance JFET structureHARRIS CORP·Filed 1989·Granted Oct 24, 1989·32 cites·13 claims
- 2975US7564117B2Bipolar transistor having variable value emitter ballast resistorsINTERSIL INC·Filed 2007·Granted Jul 21, 2009·4 cites·15 claims
- 3075US5541435AIntegration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process stepsHARRIS CORP·Filed 1994·Granted Jul 30, 1996·27 cites·4 claims
- 3174US7314791B2Bipolar transistor for an integrated circuit having variable value emitter ballast resistorsINTERSIL INC·Filed 2005·Granted Jan 1, 2008·4 cites·19 claims
- 3274US5895953AOhmic contact to lightly doped islands from a conductive rapid diffusion buried layerHARRIS CORP·Filed 1997·Granted Apr 20, 1999·30 cites·34 claims
- 3374US5650658AIntegration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process stepsHARRIS CORP·Filed 1996·Granted Jul 22, 1997·26 cites·2 claims
- 3473US6822292B2Lateral MOSFET structure of an integrated circuit having separated device regionsINTERSIL INC·Filed 2001·Granted Nov 23, 2004·10 cites·32 claims
- 3572US5643821AMethod for making ohmic contact to lightly doped islands from a silicide buried layer and applicationsHARRIS CORP·Filed 1994·Granted Jul 1, 1997·26 cites·61 claims
- 3671US6867495B2Integrated circuit having a device wafer with a diffused doped backside layerINTERSIL INC·Filed 2001·Granted Mar 15, 2005·9 cites·32 claims
- 3770US7662692B2Integrated process for thin film resistors with silicidesINTERSIL INC·Filed 2007·Granted Feb 16, 2010·2 cites·19 claims
- 3868US6614088B1Breakdown improvement method and sturcture for lateral DMOS deviceFiled 2000·Granted Sep 2, 2003·14 cites·21 claims
- 3968US5770880AP-collector H.V. PMOS switch VT adjusted source/drainHARRIS CORP·Filed 1996·Granted Jun 23, 1998·28 cites·9 claims
- 4068US5283461ATrench conductor and crossunder architectureHARRIS CORP·Filed 1992·Granted Feb 1, 1994·33 cites·6 claims
- 4167US7759728B2Depletable cathode low charge storage diodeINTERSIL INC·Filed 2008·Granted Jul 20, 2010·2 cites·18 claims
- 4267US5466963ATrench resistor architectureHARRIS CORP·Filed 1994·Granted Nov 14, 1995·26 cites·24 claims
- 4366US7605052B2Method of forming an integrated circuit having a device wafer with a diffused doped backside layerINTERSIL CORP·Filed 2007·Granted Oct 20, 2009·1 cites·15 claims
- 4466US6946720B2Bipolar transistor for an integrated circuit having variable value emitter ballast resistorsINTERSIL INC·Filed 2003·Granted Sep 20, 2005·9 cites·24 claims
- 4566US6765247B2Integrated circuit with a MOS structure having reduced parasitic bipolar transistor actionINTERSIL INC·Filed 2001·Granted Jul 20, 2004·10 cites·45 claims
- 4666US5306650AMethod of making silicon MESFET for dielectrically isolated integrated circuitsHARRIS CORP·Filed 1990·Granted Apr 26, 1994·32 cites·9 claims
- 4766US5091336AMethod of making a high breakdown active device structure with low series resistanceHARRIS CORP·Filed 1990·Granted Feb 25, 1992·25 cites·16 claims
- 4866US4398142AKelvin-connected buried zener voltage reference circuitHARRIS CORP·Filed 1981·Granted Aug 9, 1983·17 cites·8 claims
- 4965USRE44430EPMOS depletable drain extension made from NMOS dual depletable drain extensionsBEASOM JAMES D·Filed 2011·Granted Aug 13, 2013·1 cites·29 claims
- 5065US6946364B2Integrated circuit having a device wafer with a diffused doped backside layerINTERSIL INC·Filed 2004·Granted Sep 20, 2005·6 cites·4 claims
Showing the top 50 of 128 patent records by PatentIndex Score.
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