Inventor · disambiguated record
Woo-Yeong Cho
Also filed as: CHO WOO-YEONG
111 granted patents·6 pending applications·2,006 citations·filing 2001–2023
99Inventor score
Top patents by PatentIndex Score
117 records- 0198US7808815B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·72 cites·9 claims
- 0298US7570511B2Semiconductor memory device having a three-dimensional cell array structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·80 cites·16 claims
- 0398US7542356B2Semiconductor memory device and method for reducing cell activation during write operationsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·76 cites·18 claims
- 0498US7529124B2Phase change memory devices and systems, and related programming methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 5, 2009·77 cites·41 claims
- 0598US7190607B2Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurementSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 13, 2007·78 cites·32 claims
- 0697US8134866B2Phase change memory devices and systems, and related programming methodsBAE JUN-SOO·Filed 2010·Granted Mar 13, 2012·64 cites·20 claims
- 0796US8159867B2Phase change memory devices and systems, and related programming methodsCHO WOO-YEONG·Filed 2009·Granted Apr 17, 2012·49 cites·28 claims
- 0896US7304885B2Phase change memories and/or methods of programming phase change memories using sequential reset controlSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 4, 2007·33 cites·31 claims
- 0995US7283387B2Phase change random access memory device having variable drive voltage circuitSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 16, 2007·44 cites·18 claims
- 1095US7180771B2Device and method for pulse width control in a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 20, 2007·34 cites·55 claims
- 1195US7085154B2Device and method for pulse width control in a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·82 cites·54 claims
- 1294US7903448B2Resistance random access memory having common source lineSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·31 cites·9 claims
- 1394US7639522B2Method of driving multi-level variable resistive memory device and multi-level variable resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·34 cites·20 claims
- 1494US7522449B2Phase change memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·35 cites·20 claims
- 1594US7245526B2Phase change memory device providing compensation for leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 17, 2007·34 cites·20 claims
- 1694US6982913B2Data read circuit for use in a semiconductor memory and a memory thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 3, 2006·73 cites·20 claims
- 1793US8116127B2Phase change memory devices and systems, and related programming methodsCHO WOO-YEONG·Filed 2009·Granted Feb 14, 2012·24 cites·39 claims
- 1893US7920405B2Circuits and methods for adaptive write bias driving of resistive non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 5, 2011·34 cites·28 claims
- 1993US7548451B2Phase change random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·24 cites·23 claims
- 2093US7427531B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·27 cites·30 claims
- 2193US6885602B2Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit thereforSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 26, 2005·64 cites·26 claims
- 2292US7894236B2Nonvolatile memory devices that utilize read/write merge circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 22, 2011·24 cites·10 claims
- 2392US7450415B2Phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·24 cites·27 claims
- 2492US7391644B2Phase-changeable memory device and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·29 cites·22 claims
- 2591US7688621B2Memory system, memory device and apparatus including writing driver circuit for a variable resistive memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 30, 2010·26 cites·20 claims
- 2691US7656719B2Phase change memory device generating program current and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 2, 2010·14 cites·11 claims
- 2791US7315469B2Control of set/reset pulse in response to peripheral temperature in PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·21 cites·20 claims
- 2891US7012834B2Writing driver circuit of phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 14, 2006·53 cites·20 claims
- 2990US8243542B2Resistance variable memory devices and read methods thereofBAE JUNSOO·Filed 2010·Granted Aug 14, 2012·59 cites·20 claims
- 3090US8116117B2Method of driving multi-level variable resistive memory device and multi-level variable resistive memory deviceCHO WOO-YEONG·Filed 2009·Granted Feb 14, 2012·22 cites·15 claims
- 3190US7851859B2Single transistor memory device having source and drain insulating regions and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 14, 2010·17 cites·16 claims
- 3290US6943395B2Phase random access memory with high densitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 13, 2005·45 cites·20 claims
- 3389US7582941B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·14 cites·6 claims
- 3489US7535747B2Phase change random access memory and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 19, 2009·21 cites·24 claims
- 3589US7463509B2Magneto-resistive RAM having multi-bit cell array structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 9, 2008·19 cites·24 claims
- 3689US7457151B2Phase change random access memory (PRAM) device having variable drive voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 25, 2008·21 cites·23 claims
- 3788US7746688B2PRAM and method of firing memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·20 cites·24 claims
- 3888US7633788B2Variable resistive memory wordline switchSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 15, 2009·16 cites·16 claims
- 3987US8143653B2Variable resistance memory device and system thereofCHO WOO-YEONG·Filed 2009·Granted Mar 27, 2012·14 cites·8 claims
- 4086US7405965B2Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 29, 2008·17 cites·17 claims
- 4186US7064601B2Reference voltage generating circuit using active resistance deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 20, 2006·36 cites·13 claims
- 4286US6982908B2Magnetic random access memory device capable of providing a constant current to a reference cellSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 3, 2006·39 cites·18 claims
- 4385US7952956B2Variable resistance memory device and systemSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 31, 2011·15 cites·24 claims
- 4485US7447092B2Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperatureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 4, 2008·15 cites·11 claims
- 4584US8259511B2Phase change memory device generating program current and method thereofCHO BEAK-HYUNG·Filed 2011·Granted Sep 4, 2012·5 cites·12 claims
- 4684US7548467B2Bias voltage generator and method generating bias voltage for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·14 cites·20 claims
- 4783US7304886B2Writing driver circuit of phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 4, 2007·12 cites·20 claims
- 4882US7924639B2Nonvolatile memory device using resistance materialSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·13 cites·20 claims
- 4982US7633100B2Phase change random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 15, 2009·16 cites·20 claims
- 5081US7457152B2Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 25, 2008·12 cites·33 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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