Inventor · disambiguated record
Hiroaki Okagawa
Also filed as: OKAGAWA HIROAKI
25 granted patents·7 pending applications·941 citations·filing 1993–2013
97Inventor score
Files withMITSUBISHI CABLE IND LTD16MITSUBISHI CHEM CORP6HIRAOKA SHIN2JOICHI TAKAHIDE2KUDO HIROMITSU2
Top patents by PatentIndex Score
32 records- 0196US5770887AGaN single crystalMITSUBISHI CABLE IND LTD·Filed 1994·Granted Jun 23, 1998·204 cites·8 claims
- 0293US6225650B1GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereofMITSUBISHI CABLE IND LTD·Filed 1998·Granted May 1, 2001·193 cites·12 claims
- 0392US6940098B1Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CABLE IND LTD·Filed 2000·Granted Sep 6, 2005·54 cites·14 claims
- 0491US8581488B2White light-emitting semiconductor devicesSAKUTA HIROAKI·Filed 2011·Granted Nov 12, 2013·13 cites·10 claims
- 0591US7053420B2GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereofMITSUBISHI CABLE IND LTD·Filed 2002·Granted May 30, 2006·126 cites·16 claims
- 0689US5810925AGaN single crystalMITSUBISHI CABLE IND LTD·Filed 1996·Granted Sep 22, 1998·56 cites·11 claims
- 0787US7589001B2Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CHEM CORP·Filed 2006·Granted Sep 15, 2009·9 cites·9 claims
- 0886US7179667B2Semiconductor base material and method of manufacturing the materialMITSUBISHI CABLE IND LTD·Filed 2001·Granted Feb 20, 2007·41 cites·9 claims
- 0985US8829778B2White light-emitting semiconductor devicesSAKUTA HIROAKI·Filed 2013·Granted Sep 9, 2014·6 cites·15 claims
- 1084US5414281ASemiconductor light emitting element with reflecting layersMITSUBISHI CABLE IND LTD·Filed 1993·Granted May 9, 1995·75 cites·10 claims
- 1180US7115486B2Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CABLE IND LTD·Filed 2004·Granted Oct 3, 2006·18 cites·7 claims
- 1275US7504324B2Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing methodMITSUBISHI CHEM CORP·Filed 2006·Granted Mar 17, 2009·3 cites·8 claims
- 1374US8946772B2Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting elementOKAGAWA HIROAKI·Filed 2009·Granted Feb 3, 2015·8 cites·18 claims
- 1474US6700179B1Method for growing GaN compound semiconductor crystal and semiconductor substrateMITSUBISHI CABLE IND LTD·Filed 2000·Granted Mar 2, 2004·15 cites·6 claims
- 1572US8158990B2Light emitting device using GaN LED chipJOICHI TAKAHIDE·Filed 2007·Granted Apr 17, 2012·5 cites·22 claims
- 1671US6794210B2Method for growing GaN compound semiconductor crystal and semiconductor substrateMITSUBISHI CABLE IND LTD·Filed 2003·Granted Sep 21, 2004·12 cites·15 claims
- 1770US5793061AGroup-III nitride based light emitterMITSUBISHI CABLE IND LTD·Filed 1996·Granted Aug 11, 1998·49 cites·5 claims
- 1868US8455886B2Light emitting device using GaN LED chipJOICHI TAKAHIDE·Filed 2012·Granted Jun 4, 2013·2 cites·11 claims
- 1965US8158994B2GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included thereinHIRAOKA SHIN·Filed 2008·Granted Apr 17, 2012·4 cites·9 claims
- 2056US8012783B2Semiconductor element and method for manufacturing sameMITSUBISHI CHEM CORP·Filed 2006·Granted Sep 6, 2011·1 cites·19 claims
- 2153US2011012154A1Led element and method for manufacturing led elementMITSUBISHI CHEM CORP·Filed 2008·Application pending·0 cites
- 2252US2011260196A1Led element and method for manufacturing led elementMITSUBISHI CHEM CORP·Filed 2011·Application pending·0 cites
- 2351US6734515B1Semiconductor light receiving elementMITSUBISHI CABLE IND LTD·Filed 1999·Granted May 11, 2004·17 cites·6 claims
- 2451US2014061664A1Light emitting device using gan led chipMITSUBISHI CHEM CORP·Filed 2013·Application pending·0 cites
- 2550US5635733ASemiconductor light emitting element with a current diffusing layer having a changing carrier concentration thereinMITSUBISHI CABLE IND LTD·Filed 1996·Granted Jun 3, 1997·16 cites·16 claims
- 2647US2012171796A1Gan led element and light emitting device having a structure to reduce light absorption by a pad electrode included thereinHIRAOKA SHIN·Filed 2012·Application pending·0 cites
- 2741US5631475ASemiconductor light emitting elementMITSUBISHI CABLE IND LTD·Filed 1995·Granted May 20, 1997·9 cites·9 claims
- 2841US2008135868A1Nitride Semiconductor Light Emitting Element and Method for Manufacturing the SameMITSUBISHI CABLE IND LTD·Filed 2005·Application pending·0 cites
- 2936US8716728B2Nitride semiconductor light-emitting diode deviceKUDO HIROMITSU·Filed 2007·Granted May 6, 2014·0 cites·8 claims
- 3035US5710440ASemiconductor light emitting element with In GaAlP active layer of specified thicknessMITSUBISHI CABLE IND LTD·Filed 1996·Granted Jan 20, 1998·5 cites·10 claims
- 3134US2004056258A1Multi-wavelength luminous elementFiled 2001·Application pending·0 cites
- 3231US2008048194A1Nitride Semiconductor Light-Emitting DeviceKUDO HIROMITSU·Filed 2005·Application pending·0 cites
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