Inventor · disambiguated record
Paolo Cappelletti
Also filed as: CAPPELLETTI PAOLO · CAPPELLETTI PAOLO G · CAPPELLETTI PAOLO GIUSEPPE
56 granted patents·2 pending applications·922 citations·filing 1987–2025
99Inventor score
Files withST MICROELECTRONICS SRL34SGS THOMSON MICROELECTRONICS14MICRON TECHNOLOGY INC3GROSSI ALESSANDRO2SGS MICROELETTRONICA SPA2
Top patents by PatentIndex Score
58 records- 0196US7012832B1Magnetic memory cell with plural read transistorsST MICROELECTRONICS SRL·Filed 2003·Granted Mar 14, 2006·160 cites·30 claims
- 0294US5942004ADevice and a method for storing data and corresponding error-correction informationST MICROELECTRONICS SRL·Filed 1995·Granted Aug 24, 1999·125 cites·26 claims
- 0392US11227992B2Memory cellST MICROELECTRONICS SRL·Filed 2020·Granted Jan 18, 2022·3 cites·23 claims
- 0487US6074916AFLASH-EPROM with embedded EEPROMSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Jun 13, 2000·58 cites·23 claims
- 0586US2025344406A1Switching cellST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0682US6410387B1Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitryST MICROELECTRONICS SRL·Filed 1999·Granted Jun 25, 2002·38 cites·24 claims
- 0781US11653579B2Phase-change memory cellST MICROELECTRONICS SRL·Filed 2021·Granted May 16, 2023·1 cites·18 claims
- 0880US11355702B2Memory deviceST MICROELECTRONICS SRL·Filed 2019·Granted Jun 7, 2022·2 cites·45 claims
- 0980US7560782B2Transistor structure with high input impedance and high current capabilityPELLIZZER FABIO·Filed 2006·Granted Jul 14, 2009·8 cites·14 claims
- 1080US6713347B2Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitryST MICROELECTRONICS SRL·Filed 2002·Granted Mar 30, 2004·18 cites·16 claims
- 1180US5612913AByte erasable EEPROM fully compatible with a single power supply flash-EPROM processSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Mar 18, 1997·47 cites·27 claims
- 1278US4935790AEEPROM memory cell with a single level of polysilicon programmable and erasable bit by bitSGS MICROELETTRONICA SPA·Filed 1987·Granted Jun 19, 1990·36 cites·5 claims
- 1377US12114580B2Phase-change memory cellST MICROELECTRONICS SRL·Filed 2023·Granted Oct 8, 2024·0 cites·18 claims
- 1477US6172908B1Controlled hot-electron writing method for non-volatile memory cellsST MICROELECTRONICS SRL·Filed 1998·Granted Jan 9, 2001·45 cites·15 claims
- 1576US10910558B2Memory deviceST MICROELECTRONICS SRL·Filed 2019·Granted Feb 2, 2021·3 cites·26 claims
- 1675US6222775B1Flash compatible EEPROMST MICROELECTRONICS SRL·Filed 2000·Granted Apr 24, 2001·24 cites·29 claims
- 1774US12402328B2Switching cell with direct contact to fixed resistor elementST MICROELECTRONICS SRL·Filed 2022·Granted Aug 26, 2025·0 cites·18 claims
- 1873US6876033B2Electrically erasable and programmable non-volatile memory cellST MICROELECTRONICS SRL·Filed 2003·Granted Apr 5, 2005·19 cites·19 claims
- 1971US11641786B2Memory deviceST MICROELECTRONICS SRL·Filed 2022·Granted May 2, 2023·0 cites·14 claims
- 2071US6410389B1Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the sameST MICROELECTRONICS SRL·Filed 2000·Granted Jun 25, 2002·17 cites·21 claims
- 2170US8664702B2Shallow trench isolation for a memoryGROSSI ALESSANDRO·Filed 2011·Granted Mar 4, 2014·2 cites·14 claims
- 2268US5793675AMethod of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1997·Granted Aug 11, 1998·24 cites·15 claims
- 2368US5466622AProcess for fabricating integrated devices including nonvolatile memories and transistors with tunnel oxide protectionSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Nov 14, 1995·25 cites·14 claims
- 2466US9577188B2Semiconductor constructions and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Feb 21, 2017·1 cites·7 claims
- 2566US6576950B1EEPROM type non-volatile memory cell and corresponding production methodST MICROELECTRONICS SRL·Filed 2000·Granted Jun 10, 2003·13 cites·12 claims
- 2666US4968645AMethod for manufacturing MOS/CMOS monolithic integrated circuits including silicide and polysilicon patterningSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Nov 6, 1990·32 cites·3 claims
- 2764US5712816AMethod for evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1996·Granted Jan 27, 1998·40 cites·44 claims
- 2862US5913120AProcess for fabricating integrated devices including nonvolatile memories and transistors with tunnel oxide protectionSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jun 15, 1999·23 cites·9 claims
- 2960US7001800B2Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuitST MICROELECTRONICS SRL·Filed 2004·Granted Feb 21, 2006·8 cites·7 claims
- 3059US12356634B2Phase change memoryST MICROELECTRONICS SRL·Filed 2022·Granted Jul 8, 2025·0 cites·21 claims
- 3159US6275960B1Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereofST MICROELECTRONICS SRL·Filed 1998·Granted Aug 14, 2001·19 cites·27 claims
- 3259US5637520AProcess for fabricating integrated devices including flash-EEPROM memories and transistorsST MICROELECTRONICS SRL·Filed 1994·Granted Jun 10, 1997·22 cites·13 claims
- 3355US8963220B2Shallow trench isolation for a memoryMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 24, 2015·0 cites·19 claims
- 3455US5850092AFLASH-EPROM with embedded EEPROMSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Dec 15, 1998·14 cites·8 claims
- 3553US8097506B2Shallow trench isolation for a memoryGROSSI ALESSANDRO·Filed 2008·Granted Jan 17, 2012·0 cites·17 claims
- 3652US7304485B2Analysis of the quality of contacts and vias in multi-metal fabrication processes of semiconductor devices, method and test chip architectureST MICROELECTRONICS SRL·Filed 2004·Granted Dec 4, 2007·3 cites·21 claims
- 3752US6399444B1Method of making floating gate non-volatile memory cell with low erasing voltageSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Jun 4, 2002·3 cites·15 claims
- 3852US6147380AFloating gate non-volatile memory cell with low erasing voltage and having different potential barriersSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Nov 14, 2000·3 cites·35 claims
- 3950US5322803AProcess for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cellsSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Jun 21, 1994·13 cites·4 claims
- 4049US5497345ANonvolatile EPROM, EEPROM of flash-EEPROM memory with tunnel oxide protectionST MICROELECTRONICS SRL·Filed 1994·Granted Mar 5, 1996·12 cites·12 claims
- 4148US9166159B2Semiconductor constructions and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 20, 2015·0 cites·11 claims
- 4247US7320904B2Manufacturing method for non-active electrically structures in order to optimize the definition of active electrically structures in an electronic circuit integrated on a semiconductor substrate and corresponding circuitST MICROELECTRONICS SRL·Filed 2006·Granted Jan 22, 2008·0 cites·14 claims
- 4345US6841445B2Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectricSGS THOMSON MICROELECTRONICS·Filed 2004·Granted Jan 11, 2005·1 cites·4 claims
- 4445US2009014709A1Process for manufacturing an array of cells including selection bipolar junction transistors with projecting conduction regionsST MICROELECTRONICS SRL·Filed 2008·Application pending·0 cites
- 4544US5604699AMethod of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memoriesST MICROELECTRONICS SRL·Filed 1995·Granted Feb 18, 1997·8 cites·30 claims
- 4642US6284585B1Electronic memory device having bit lines with block selector switchesST MICROELECTRONICS SRL·Filed 1999·Granted Sep 4, 2001·6 cites·6 claims
- 4741US5328863AProcess for manufacturing a ROM cell with low drain capacitanceST MICROELECTRICS SRL·Filed 1991·Granted Jul 12, 1994·9 cites·32 claims
- 4840US6710394B2Method of making floating gate non-volatile memory cell with low erasing voltage having double layer gate dielectricSGS THOMSON MICROELECTRONICS·Filed 2002·Granted Mar 23, 2004·0 cites·8 claims
- 4940US6532171B2Nonvolatile semiconductor memory capable of selectively erasing a plurality of elemental memory unitsST MICROELECTRONICS SRL·Filed 2001·Granted Mar 11, 2003·2 cites·14 claims
- 5040US5969977AElectronic memory device having bit lines with block selector switchesST MICROELECTRONICS SRL·Filed 1997·Granted Oct 19, 1999·5 cites·21 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →