Inventor · disambiguated record
John Bradley Boos
Also filed as: BOOS JOHN B · BOOS JOHN BRADLEY
18 granted patents·1 pending application·248 citations·filing 1988–2016
94Inventor score
Top patents by PatentIndex Score
19 records- 0190US6448648B1Metalization of electronic semiconductor devicesUS NAVY·Filed 1997·Granted Sep 10, 2002·86 cites·17 claims
- 0289US9006708B2Low-resistivity p-type GaSb quantum wellsBENNETT BRIAN R·Filed 2013·Granted Apr 14, 2015·14 cites·10 claims
- 0380US8652959B2n- and p-channel field effect transistors with single quantum well for complementary circuitsBENNETT BRIAN R·Filed 2013·Granted Feb 18, 2014·4 cites·4 claims
- 0477US5798540AElectronic devices with InAlAsSb/AlSb barrierUS NAVY·Filed 1997·Granted Aug 25, 1998·42 cites·12 claims
- 0576US8461664B2N- and p-channel field-effect transistors with single quantum well for complementary circuitsBENNETT BRIAN R·Filed 2011·Granted Jun 11, 2013·3 cites·12 claims
- 0675US5196358AMethod of manufacturing InP junction FETS and junction HEMTS using dual implantation and double nitride layersUS NAVY·Filed 1989·Granted Mar 23, 1993·33 cites·15 claims
- 0774US8421121B2Antimonide-based compound semiconductor with titanium tungsten stackCHOU YEONG-CHANG·Filed 2007·Granted Apr 16, 2013·6 cites·14 claims
- 0873US7388235B2High electron mobility transistors with Sb-based channelsUS NAVY·Filed 2005·Granted Jun 17, 2008·8 cites·20 claims
- 0971US8884265B2Strained InGaAs quantum wells for complementary transistorsBENNETT BRIAN R·Filed 2014·Granted Nov 11, 2014·2 cites·10 claims
- 1069US6316124B1Modified InAs hall elementsUS NAVY·Filed 2000·Granted Nov 13, 2001·14 cites·25 claims
- 1167US7635879B2InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistorsUS NAVY·Filed 2005·Granted Dec 22, 2009·4 cites·6 claims
- 1261US4924285AMonolithic multichannel detector amplifier arrays and circuit channelsUS NAVY·Filed 1988·Granted May 8, 1990·20 cites·20 claims
- 1357US8076700B2P-N junction for use as an RF mixer from GHZ to THZ frequenciesMAGNO RICHARD·Filed 2009·Granted Dec 13, 2011·2 cites·22 claims
- 1451US8927354B2Antimonide-based compound semiconductor with titanium tungsten stackNORTHROP GRUMMAN SYSTEMS CORP·Filed 2013·Granted Jan 6, 2015·0 cites·20 claims
- 1548US9054169B2Strained InGaAs quantum wells for complementary transistorsBENNETT BRIAN R·Filed 2014·Granted Jun 9, 2015·0 cites·10 claims
- 1638US10192979B2Vacuum transistor structure using graphene edge field emitter and screen electrodeUS NAVY·Filed 2016·Granted Jan 29, 2019·0 cites·36 claims
- 1737US2014339501A1Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic DevicesBENNETT BRIAN R·Filed 2013·Application pending·0 cites
- 1834US5015603ATiW diffusion barrier for AuZn ohmic contact to P-Type InPUS NAVY·Filed 1988·Granted May 14, 1991·6 cites·3 claims
- 1931US4816881AA TiW diffusion barrier for AuZn ohmic contacts to p-type InPUS NAVY·Filed 1988·Granted Mar 28, 1989·4 cites·10 claims
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