Inventor · disambiguated record
Ichiro Murai
Also filed as: MURAI ICHIRO
21 granted patents·2 pending applications·436 citations·filing 1991–2006
96Inventor score
Files withNIPPON STEEL CORP8SEIKO EPSON CORP6NIPPON STEEL SEMICONDUCTOR4EPSON IMAGING DEVICES CORP2MITSUBISHI ELECTRIC CORP2
Top patents by PatentIndex Score
23 records- 0191US7530722B2Illumination device, electro-optical device, and electronic apparatusEPSON IMAGING DEVICES CORP·Filed 2006·Granted May 12, 2009·11 cites·20 claims
- 0291US6757038B2Liquid crystal display device and electronic apparatusSEIKO EPSON CORP·Filed 2003·Granted Jun 29, 2004·45 cites·5 claims
- 0388US5243559ASemiconductor memory deviceNIPPON STEEL CORP·Filed 1991·Granted Sep 7, 1993·75 cites·23 claims
- 0485US6862059B2Transflective liquid crystal device and electronic apparatus using the sameSEIKO EPSON CORP·Filed 2003·Granted Mar 1, 2005·29 cites·15 claims
- 0578US6396077B1Semiconductor device provided with conductive layer and liquid crystal displayMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 28, 2002·23 cites·4 claims
- 0678US5473184ASemiconductor device and method for fabricating sameNIPPON STEEL CORP·Filed 1994·Granted Dec 5, 1995·58 cites·9 claims
- 0776US7321409B2Transflective liquid crystal device and electronic apparatus using the sameSEIKO EPSON CORP·Filed 2005·Granted Jan 22, 2008·4 cites·3 claims
- 0871US7688408B2Liquid crystal device and electronic apparatusEPSON IMAGING DEVICES CORP·Filed 2006·Granted Mar 30, 2010·3 cites·9 claims
- 0971US6808964B2Method of manufacturing a semiconductor device and liquid crystal displayMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Oct 26, 2004·15 cites·15 claims
- 1071US5789778ASemiconductor device with gate insulator filmNIPPON STEEL SEMICONDUCTOR·Filed 1996·Granted Aug 4, 1998·33 cites·3 claims
- 1165US6977701B2Transflective liquid crystal device and electronic apparatus using the sameSEIKO EPSON CORP·Filed 2003·Granted Dec 20, 2005·8 cites·14 claims
- 1261US6847083B2Semiconductor device, electro-optic device, and electronic instrumentSEIKO EPSON CORP·Filed 2002·Granted Jan 25, 2005·9 cites·15 claims
- 1361US5250832AMOS type semiconductor memory deviceNIPPON STEEL CORP·Filed 1991·Granted Oct 5, 1993·21 cites·11 claims
- 1459US5426327AMOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrationsNIPPON STEEL CORP·Filed 1993·Granted Jun 20, 1995·19 cites·3 claims
- 1552US6066535AMethod of manufacturing semiconductor deviceNIPPON STEEL SEMICONDUCTOR·Filed 1999·Granted May 23, 2000·15 cites·4 claims
- 1647US5851873AMethod of making semiconductor memory deviceNIPPON STEEL SEMICONDUCTOR·Filed 1996·Granted Dec 22, 1998·10 cites·6 claims
- 1747US5468979ASemiconductor device having trench type capacitors formed completely within an insulating layerNIPPON STEEL CORP·Filed 1994·Granted Nov 21, 1995·11 cites·12 claims
- 1846US5323045ASemiconductor SRAM with low resistance power lineNIPPON STEEL CORP·Filed 1992·Granted Jun 21, 1994·15 cites·28 claims
- 1945US6087213ASemiconductor memory device and manufacturing method thereofNIPPON STEEL SEMICONDUCTOR·Filed 1998·Granted Jul 11, 2000·8 cites·7 claims
- 2045US5359217AMOS semiconductor memory device having stack capacitor with metal plugNIPPON STEEL CORP·Filed 1993·Granted Oct 25, 1994·11 cites·7 claims
- 2144US5410183AContact structure of semiconductor device and method of manufacturing the sameNIPPON STEEL CORP·Filed 1994·Granted Apr 25, 1995·13 cites·12 claims
- 2241US2005200799A1Electro-optical device, method of manufacturing the same, and electronic apparatusSEIKO EPSON CORP·Filed 2005·Application pending·0 cites
- 2337US2003034492A1Semiconductor device and liquid crystal display deviceFiled 2001·Application pending·0 cites
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