Inventor · disambiguated record
Mong-Song Liang
Also filed as: LIANG MONG · LIANG MONG S · LIANG MONG-SONG
211 granted patents·18 pending applications·5,729 citations·filing 1985–2014
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG189CHUANG HARRY10ADVANCED MICRO DEVICES INC3YAO LIANG-GI3TAIWAN SEMICONDUCTOR MFG CO LTD2
Top patents by PatentIndex Score
229 records- 0197US7868317B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 11, 2011·51 cites·24 claims
- 0297US7554110B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 30, 2009·48 cites·29 claims
- 0397US7402866B2Backside contacts for MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 22, 2008·63 cites·18 claims
- 0497US6071783APseudo silicon on insulator MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 6, 2000·175 cites·27 claims
- 0596US6346729B1Pseudo silicon on insulator MOSFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Feb 12, 2002·110 cites·4 claims
- 0696US5714412AMulti-level, split-gate, flash memory cell and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 3, 1998·137 cites·13 claims
- 0795US8093120B2Integrating a first contact structure in a gate last processYEH CHIUNG-HAN·Filed 2010·Granted Jan 10, 2012·21 cites·20 claims
- 0895US8035165B2Integrating a first contact structure in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 11, 2011·25 cites·20 claims
- 0995US6548856B1Vertical stacked gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 15, 2003·61 cites·3 claims
- 1095US6093606AMethod of manufacture of vertical stacked gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 25, 2000·106 cites·8 claims
- 1195US5851881AMethod of making monos flash memory for multi-level logicTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 22, 1998·140 cites·11 claims
- 1295US5679591AMethod of making raised-bitline contactless trenched flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Oct 21, 1997·120 cites·15 claims
- 1394US7898037B2Contact scheme for MOSFETsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·33 cites·13 claims
- 1494US7238989B2Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 3, 2007·31 cites·19 claims
- 1594US6436771B1Method of forming a semiconductor device with multiple thickness gate dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·90 cites·8 claims
- 1694US5877523AMulti-level split- gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 2, 1999·114 cites·3 claims
- 1794US5607874AMethod for fabricating a DRAM cell with a T shaped storage capacitorTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 4, 1997·86 cites·8 claims
- 1893US6387775B1Fabrication of MIM capacitor in copper damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 14, 2002·69 cites·30 claims
- 1992US7955964B2Dishing-free gap-filling with multiple CMPsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 7, 2011·21 cites·20 claims
- 2092US5668035AMethod for fabricating a dual-gate dielectric module for memory with embedded logic technologyTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·127 cites·20 claims
- 2192US4742491AMemory cell having hot-hole injection erase modeADVANCED MICRO DEVICES INC·Filed 1985·Granted May 3, 1988·124 cites·14 claims
- 2291US7528028B2Super anneal for process induced strain modulationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 5, 2009·22 cites·18 claims
- 2391US6900269B2Halogen-free resin compositionCHANG CHUN PLASTICS CO LTD·Filed 2003·Granted May 31, 2005·50 cites·20 claims
- 2491US6806192B2Method of barrier-less integration with copper alloyTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 19, 2004·45 cites·32 claims
- 2591US6281545B1Multi-level, split-gate, flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 28, 2001·98 cites·13 claims
- 2691US6174754B1Methods for formation of silicon-on-insulator (SOI) and source/drain-on-insulator(SDOI) transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 16, 2001·77 cites·31 claims
- 2790US8735235B2Integrated circuit metal gate structure and method of fabricationCHUANG HARRY·Filed 2008·Granted May 27, 2014·15 cites·15 claims
- 2890US7357838B2Relaxed silicon germanium substrate with low defect densityTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 15, 2008·13 cites·24 claims
- 2990US6590344B2Selectively controllable gas feed zones for a plasma reactorTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 8, 2003·55 cites·19 claims
- 3090US6455330B1Methods to create high-k dielectric gate electrodes with backside cleaningTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 24, 2002·51 cites·20 claims
- 3190US6440833B1Method of protecting a copper pad structure during a fuse opening procedureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 27, 2002·62 cites·22 claims
- 3289US7410854B2Method of making FUSI gate and resulting structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 12, 2008·16 cites·20 claims
- 3389US6054344AOTP (open trigger path) latchup scheme using buried-diode for sub-quarter micron transistorsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 25, 2000·80 cites·30 claims
- 3488US8125051B2Device layout for gate last processCHUANG HARRY·Filed 2009·Granted Feb 28, 2012·16 cites·20 claims
- 3588US6706629B1Barrier-free copper interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 16, 2004·54 cites·47 claims
- 3688US5804858ABody contacted SOI MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 8, 1998·65 cites·6 claims
- 3788US5801415ANon-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitorsTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 1, 1998·69 cites·3 claims
- 3888US5702988ABlending integrated circuit technologyTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Dec 30, 1997·77 cites·55 claims
- 3988US5545579AMethod of fabricating a sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drainsTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Aug 13, 1996·74 cites·11 claims
- 4087US6184155B1Method for forming a ultra-thin gate insulator layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Feb 6, 2001·39 cites·18 claims
- 4187US5573961AMethod of making a body contact for a MOSFET device fabricated in an SOI layerTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Nov 12, 1996·66 cites·26 claims
- 4287US4774197AMethod of improving silicon dioxideADVANCED MICRO DEVICES INC·Filed 1986·Granted Sep 27, 1988·74 cites·11 claims
- 4386US8274071B2MOS devices with partial stressor channelYU MING-HUA·Filed 2011·Granted Sep 25, 2012·7 cites·23 claims
- 4486US6767847B1Method of forming a silicon nitride-silicon dioxide gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 27, 2004·37 cites·15 claims
- 4586US6716753B1Method for forming a self-passivated copper interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 6, 2004·36 cites·31 claims
- 4685US7977202B2Reducing device performance drift caused by large spacings between active regionsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jul 12, 2011·7 cites·14 claims
- 4785US7115974B2Silicon oxycarbide and silicon carbonitride based materials for MOS devicesTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2004·Granted Oct 3, 2006·34 cites·19 claims
- 4885US6943111B2Barrier free copper interconnect by multi-layer copper seedTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 13, 2005·36 cites·32 claims
- 4985US6878610B1Relaxed silicon germanium substrate with low defect densityTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 12, 2005·29 cites·10 claims
- 5085US5591650AMethod of making a body contacted SOI MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jan 7, 1997·55 cites·23 claims
Showing the top 50 of 229 patent records by PatentIndex Score.
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