Inventor · disambiguated record
Alexander Usenko
Also filed as: USENKO ALEXANDER · USENKO ALEXANDER Y · USENKO ALEXANDER YURI
17 granted patents·2 pending applications·1,202 citations·filing 2000–2023
95Inventor score
Files withSILICON WAFER TECHNOLOGIES INC8USENKO ALEXANDER YURI4CORNING INC2SILICON WAFER TECHNOLOGIES2SYRNATEC INC1
Top patents by PatentIndex Score
19 records- 0197US6352909B1Process for lift-off of a layer from a substrateSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Mar 5, 2002·187 cites·18 claims
- 0296US6806171B1Method of producing a thin layer of crystalline materialSILICON WAFER TECHNOLOGIES INC·Filed 2002·Granted Oct 19, 2004·310 cites·6 claims
- 0396US6368938B1Process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrateSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Apr 9, 2002·156 cites·6 claims
- 0495US6387829B1Separation process for silicon-on-insulator wafer fabricationSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted May 14, 2002·115 cites·13 claims
- 0594US7148124B1Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafersUSENKO ALEXANDER YURI·Filed 2004·Granted Dec 12, 2006·120 cites·13 claims
- 0694US6346459B1Process for lift off and transfer of semiconductor devices onto an alien substrateSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Feb 12, 2002·99 cites·20 claims
- 0791US6355493B1Method for forming IC's comprising a highly-resistive or semi-insulating semiconductor substrate having a thin, low resistance active semiconductor layer thereonSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Mar 12, 2002·59 cites·11 claims
- 0888US6696352B1Method of manufacture of a multi-layered substrate with a thin single crystalline layer and a versatile sacrificial layerSILICON WAFER TECHNOLOGIES INC·Filed 2002·Granted Feb 24, 2004·61 cites·8 claims
- 0988US6344417B1Method for micro-mechanical structuresSILICON WAFER TECHNOLOGIES·Filed 2000·Granted Feb 5, 2002·52 cites·22 claims
- 1077US6995075B1Process for forming a fragile layer inside of a single crystalline substrateSILICON WAFER TECHNOLOGIES·Filed 2002·Granted Feb 7, 2006·27 cites·19 claims
- 1169US6861320B1Method of making starting material for chip fabrication comprising a buried silicon nitride layerSILICON WAFER TECHNOLOGIES INC·Filed 2003·Granted Mar 1, 2005·16 cites·3 claims
- 1257US2024347339A1Composite substrate for fabrication of beta gallium oxide devicesSYRNATEC INC·Filed 2023·Application pending·0 cites
- 1356US10921491B2Method of making a surface with improved mechanical and optical propertiesUSENKO ALEXANDER YURI·Filed 2019·Granted Feb 16, 2021·0 cites·10 claims
- 1454US11456204B1Silicon-on-insulator wafer and low temperature method to make thereofUSENKO ALEXANDER YURI·Filed 2021·Granted Sep 27, 2022·0 cites·6 claims
- 1554US8772875B2Semiconductor on glass substrate with stiffening layerCORNING INC·Filed 2013·Granted Jul 8, 2014·0 cites·19 claims
- 1653US12206030B2Stacked diode with side passivation and method of making the sameUNIV MISSOURI·Filed 2022·Granted Jan 21, 2025·0 cites·22 claims
- 1751US12009252B2Method of making a silicon on insulator waferUSENKO ALEXANDER YURI·Filed 2021·Granted Jun 11, 2024·0 cites·11 claims
- 1844US2014154439A1Methods for glass strengtheningCORNING INC·Filed 2013·Application pending·0 cites
- 1939US8796054B2Gallium nitride to silicon direct wafer bondingUSENKO ALEXANDER·Filed 2012·Granted Aug 5, 2014·0 cites·9 claims
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