Inventor · disambiguated record
Todd Thibeault
Also filed as: THIBEAULT TODD · THIBEAULT TODD P · THIBEAULT TODD PATRICK
11 granted patents·73 citations·filing 1992–2015
88Inventor score
Top patents by PatentIndex Score
11 records- 0190US9640528B2Low-cost complementary BiCMOS integration schemeNEWPORT FAB LLC·Filed 2015·Granted May 2, 2017·8 cites·18 claims
- 0282US8598713B2Deep silicon via for grounding of circuits and devices, emitter ballasting and isolationBLASCHKE VOLKER·Filed 2010·Granted Dec 3, 2013·7 cites·20 claims
- 0378US7229908B1System and method for manufacturing an out of plane integrated circuit inductorNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jun 12, 2007·26 cites·20 claims
- 0477US7968418B1Apparatus and method for isolating integrated circuit components using deep trench isolation and shallow trench isolationNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jun 28, 2011·8 cites·20 claims
- 0568US9105681B2Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolationNEWPORT FAB LLC·Filed 2012·Granted Aug 11, 2015·2 cites·16 claims
- 0663US9673191B2Efficient fabrication of BiCMOS devicesNEWPORT FAB LLC·Filed 2015·Granted Jun 6, 2017·1 cites·17 claims
- 0761US10297591B2BiCMOS integration using a shared SiGe layerNEWPORT FAB LLC·Filed 2015·Granted May 21, 2019·1 cites·20 claims
- 0861US10290630B2BiCMOS integration with reduced masking stepsNEWPORT FAB LLC·Filed 2015·Granted May 14, 2019·1 cites·10 claims
- 0953US7247544B1High Q inductor integrationNAT SEMICONDUCTOR CORP·Filed 2002·Granted Jul 24, 2007·6 cites·12 claims
- 1038US7678657B1System and method for manufacturing an emitter structure in a complementary bipolar CMOS transistor manufacturing processNAT SEMICONDUCTOR CORP·Filed 2006·Granted Mar 16, 2010·0 cites·20 claims
- 1134US5290718ASimplified high reliability gate oxide processNAT SEMICONDUCTOR CORP·Filed 1992·Granted Mar 1, 1994·13 cites·21 claims
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