Inventor · disambiguated record
Tyler Lowrey
Also filed as: LOWREY TYLER · LOWREY TYLER A · LOWREY TYLER ARTHUR
303 granted patents·33 pending applications·22,146 citations·filing 1988–2020
99Inventor score
Top patents by PatentIndex Score
336 records- 0199US6687153B2Programming a phase-change material memoryOVONYX INC·Filed 2003·Granted Feb 3, 2004·382 cites·22 claims
- 0299US6673700B2Reduced area intersection between electrode and programming elementOVONYX INC·Filed 2001·Granted Jan 6, 2004·648 cites·14 claims
- 0399US6674115B2Multiple layer phrase-change memoryINTEL CORP·Filed 2002·Granted Jan 6, 2004·490 cites·4 claims
- 0499US6673648B2Isolating phase change material memory cellsINTEL CORP·Filed 2003·Granted Jan 6, 2004·287 cites·12 claims
- 0599US6625054B2Method and apparatus to program a phase change memoryINTEL CORP·Filed 2001·Granted Sep 23, 2003·312 cites·37 claims
- 0699US6617192B1Electrically programmable memory element with multi-regioned contactOVONYX INC·Filed 2000·Granted Sep 9, 2003·345 cites·11 claims
- 0799US6590807B2Method for reading a structural phase-change memoryINTEL CORP·Filed 2001·Granted Jul 8, 2003·256 cites·12 claims
- 0899US6586761B2Phase change material memory deviceINTEL CORP·Filed 2001·Granted Jul 1, 2003·612 cites·12 claims
- 0999US6570784B2Programming a phase-change material memoryOVONYX INC·Filed 2001·Granted May 27, 2003·402 cites·60 claims
- 1099US6567293B1Single level metal memory cell using chalcogenide claddingOVONYX INC·Filed 2000·Granted May 20, 2003·645 cites·24 claims
- 1199US6555860B2Compositionally modified resistive electrodeINTEL CORP·Filed 2001·Granted Apr 29, 2003·636 cites·33 claims
- 1299US6545907B1Technique and apparatus for performing write operations to a phase change material memory deviceOVONYX INC·Filed 2001·Granted Apr 8, 2003·358 cites·40 claims
- 1399US6531373B2Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elementsOVONYX INC·Filed 2000·Granted Mar 11, 2003·364 cites·15 claims
- 1499US6511862B2Modified contact for programmable devicesOVONYX INC·Filed 2001·Granted Jan 28, 2003·384 cites·6 claims
- 1599US6511867B2Utilizing atomic layer deposition for programmable deviceOVONYX INC·Filed 2001·Granted Jan 28, 2003·692 cites·5 claims
- 1699US6507061B1Multiple layer phase-change memoryINTEL CORP·Filed 2001·Granted Jan 14, 2003·496 cites·27 claims
- 1799US6501111B1Three-dimensional (3D) programmable deviceINTEL CORP·Filed 2000·Granted Dec 31, 2002·542 cites·13 claims
- 1899US6487113B1Programming a phase-change memory with slow quench timeOVONYX INC·Filed 2001·Granted Nov 26, 2002·349 cites·17 claims
- 1999US6314014B1Programmable resistance memory arrays with reference cellsOVONYX INC·Filed 1999·Granted Nov 6, 2001·513 cites·99 claims
- 2098US7545256B2System and method for identifying a radio frequency identification (RFID) deviceKEYSTONE TECHNOLOGY SOLUTIONS·Filed 2006·Granted Jun 9, 2009·59 cites·53 claims
- 2198US6969866B1Electrically programmable memory element with improved contactsOVONYX INC·Filed 1999·Granted Nov 29, 2005·196 cites·33 claims
- 2298US6943365B2Electrically programmable memory element with reduced area of contact and method for making sameOVONYX INC·Filed 2001·Granted Sep 13, 2005·145 cites·3 claims
- 2398US6795338B2Memory having access devices using phase change material such as chalcogenideINTEL CORP·Filed 2002·Granted Sep 21, 2004·223 cites·23 claims
- 2498US6750079B2Method for making programmable resistance memory elementOVONYX INC·Filed 2001·Granted Jun 15, 2004·202 cites·42 claims
- 2598US6667900B2Method and apparatus to operate a memory cellOVONYX INC·Filed 2001·Granted Dec 23, 2003·277 cites·23 claims
- 2698US6576921B2Isolating phase change material memory cellsINTEL CORP·Filed 2001·Granted Jun 10, 2003·213 cites·18 claims
- 2798US6563164B2Compositionally modified resistive electrodeOVONYX INC·Filed 2001·Granted May 13, 2003·306 cites·28 claims
- 2898US6462984B1Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory arrayINTEL CORP·Filed 2001·Granted Oct 8, 2002·216 cites·20 claims
- 2998US5328810AMethod for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic processMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 12, 1994·1.3k cites·32 claims
- 3098US5241496AArray of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cellsMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 31, 1993·262 cites·16 claims
- 3198US5232549ASpacers for field emission display fabricated via self-aligned high energy ablationMICRON TECHNOLOGY INC·Filed 1992·Granted Aug 3, 1993·229 cites·22 claims
- 3298US5205770AMethod to form high aspect ratio supports (spacers) for field emission display using micro-saw technologyMICRON TECHNOLOGY INC·Filed 1992·Granted Apr 27, 1993·153 cites·20 claims
- 3398US5186670AMethod to form self-aligned gate structures and focus ringsMICRON TECHNOLOGY INC·Filed 1992·Granted Feb 16, 1993·194 cites·20 claims
- 3498US5013680AProcess for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithographyMICRON TECHNOLOGY INC·Filed 1990·Granted May 7, 1991·461 cites·21 claims
- 3597US7839674B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2008·Granted Nov 23, 2010·51 cites·23 claims
- 3697US7646630B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Jan 12, 2010·63 cites·23 claims
- 3797US7045834B2Memory cell arraysMICRON TECHNOLOGY INC·Filed 2002·Granted May 16, 2006·453 cites·25 claims
- 3897US6961258B2Pore structure for programmable deviceOVONYX INC·Filed 2004·Granted Nov 1, 2005·96 cites·7 claims
- 3997US6404665B1Compositionally modified resistive electrodeINTEL CORP·Filed 2000·Granted Jun 11, 2002·229 cites·22 claims
- 4097US5405791AProcess for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacersMICRON SEMICONDUCTOR INC·Filed 1994·Granted Apr 11, 1995·188 cites·27 claims
- 4197US5329207AField emission structures produced on macro-grain polysilicon substratesMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 12, 1994·109 cites·20 claims
- 4297US5229331AMethod to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technologyMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 20, 1993·336 cites·20 claims
- 4397US5134085AReduced-mask, split-polysilicon CMOS process, incorporating stacked-capacitor cells, for fabricating multi-megabit dynamic random access memoriesMICRON TECHNOLOGY INC·Filed 1991·Granted Jul 28, 1992·426 cites·23 claims
- 4497US5110754AMethod of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAMMICRON TECHNOLOGY INC·Filed 1991·Granted May 5, 1992·226 cites·12 claims
- 4596US7499315B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Mar 3, 2009·47 cites·108 claims
- 4696US7280390B2Reading phase change memories without triggering reset cell threshold devicesOVONYX INC·Filed 2005·Granted Oct 9, 2007·43 cites·30 claims
- 4796US6768665B2Refreshing memory cells of a phase change material memory deviceINTEL CORP·Filed 2002·Granted Jul 27, 2004·104 cites·54 claims
- 4896US6764894B2Elevated pore phase-change memoryOVONYX INC·Filed 2001·Granted Jul 20, 2004·109 cites·9 claims
- 4996US6075719AMethod of programming phase-change memory elementENERGY CONVERSION DEVICES INC·Filed 1999·Granted Jun 13, 2000·179 cites·18 claims
- 5096US5541872AFolded bit line ferroelectric memory deviceMICRON TECHNOLOGY INC·Filed 1995·Granted Jul 30, 1996·151 cites·6 claims
Showing the top 50 of 336 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →