Inventor · disambiguated record
Atsushi Era
Also filed as: ERA ATSUSHI
8 granted patents·2 pending applications·7 citations·filing 2015–2022
76Inventor score
Files withMITSUBISHI ELECTRIC CORP10
Top patents by PatentIndex Score
10 records- 0183US11444172B2Method for producing semiconductor device and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Sep 13, 2022·4 cites·8 claims
- 0277US9728611B2GaN semiconductor device comprising carbon and ironMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Aug 8, 2017·3 cites·12 claims
- 0356US2024380182A1Semiconductor laser device and method for manufacturing semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Application pending·0 cites
- 0450US12136795B2Method for producing photosemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Nov 5, 2024·0 cites·20 claims
- 0548US9793363B1GaN semiconductor device comprising carbon and ironMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Oct 17, 2017·0 cites·21 claims
- 0647US12334340B2Epitaxial wafer, semiconductor device, and method for manufacturing epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Jun 17, 2025·0 cites·15 claims
- 0740US9355841B2Manufacturing method of high electron mobility transistorMITSUBISHI ELECTRIC CORP·Filed 2015·Granted May 31, 2016·0 cites·6 claims
- 0839US10199218B2Method for manufacturing group III-V nitride semiconductor epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Feb 5, 2019·0 cites·10 claims
- 0938US2022020870A1Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Application pending·0 cites
- 1035US9478418B2Method of manufacturing semiconductor elementMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Oct 25, 2016·0 cites·10 claims
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