Inventor · disambiguated record
Shoji Miura
Also filed as: MIURA SHOJI
33 granted patents·3 pending applications·881 citations·filing 1992–2010
98Inventor score
Top patents by PatentIndex Score
36 records- 0195US7537175B2ShowerheadTOTO LTD·Filed 2006·Granted May 26, 2009·81 cites·12 claims
- 0284US6291315B1Method for etching trench in manufacturing semiconductor devicesDENSO CORP·Filed 1997·Granted Sep 18, 2001·72 cites·15 claims
- 0382US6917103B2Molded semiconductor power device having heat sinks exposed on one surfaceDENSO CORP·Filed 2002·Granted Jul 12, 2005·33 cites·19 claims
- 0482US6274452B1Semiconductor device having multilayer interconnection structure and method for manufacturing the sameDENSO CORP·Filed 1997·Granted Aug 14, 2001·52 cites·13 claims
- 0581US7793365B2Water discharge deviceTOTO LTD·Filed 2007·Granted Sep 14, 2010·19 cites·4 claims
- 0681US5423941ADry etching process for semiconductorNIPPON DENSO CO·Filed 1993·Granted Jun 13, 1995·86 cites·7 claims
- 0777US6829152B2Load drive circuit using flywheel diodeDENSO CORP·Filed 2002·Granted Dec 7, 2004·27 cites·24 claims
- 0877US5480832AMethod for fabrication of semiconductor deviceNIPPON DENSO CO·Filed 1992·Granted Jan 2, 1996·57 cites·26 claims
- 0976US7748649B2Water discharging apparatusTOTO LTD·Filed 2003·Granted Jul 6, 2010·26 cites·15 claims
- 1076US6946711B2Semiconductor deviceDENSO CORP·Filed 2002·Granted Sep 20, 2005·18 cites·10 claims
- 1174US6927167B2Method for manufacturing semiconductor device having controlled surface roughnessDENSO CORP·Filed 2003·Granted Aug 9, 2005·21 cites·14 claims
- 1272US5599722ASOI semiconductor device and method of producing same wherein warpage is reduced in the semiconductor deviceNIPPON DENSO CO·Filed 1994·Granted Feb 4, 1997·45 cites·6 claims
- 1372US5525831ASemiconductor device with thin film resistor having reduced film thickness sensitivity during trimming processNIPPON DENSO CO·Filed 1994·Granted Jun 11, 1996·33 cites·18 claims
- 1471US6809348B1Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2000·Granted Oct 26, 2004·19 cites·34 claims
- 1569US7247929B2Molded semiconductor device with heat conducting membersDENSO CORP·Filed 2004·Granted Jul 24, 2007·16 cites·14 claims
- 1669US7009292B2Package type semiconductor deviceDENSO CORP·Filed 2004·Granted Mar 7, 2006·16 cites·15 claims
- 1766US8235353B2Water faucet device and method of manufacturing water faucet equipment containing sameMIYAGI TAKAFUMI·Filed 2010·Granted Aug 7, 2012·4 cites·9 claims
- 1866US6242792B1Semiconductor device having oblique portion as reflectionDENSO CORP·Filed 1999·Granted Jun 5, 2001·31 cites·36 claims
- 1964US5522966ADry etching process for semiconductorNIPPON DENSO CO·Filed 1993·Granted Jun 4, 1996·38 cites·5 claims
- 2062US7361996B2Semiconductor device having tin-based solder layer and method for manufacturing the sameDENSO CORP·Filed 2005·Granted Apr 22, 2008·2 cites·12 claims
- 2162US7030496B2Semiconductor device having aluminum and metal electrodes and method for manufacturing the sameDENSO CORP·Filed 2004·Granted Apr 18, 2006·13 cites·16 claims
- 2262US6104078ADesign for a semiconductor device having elements isolated by insulating regionsDENSO CORP·Filed 1997·Granted Aug 15, 2000·29 cites·19 claims
- 2360US5284794AMethod of making semiconductor device using a trimmable thin-film resistorNIPPON DENSO CO·Filed 1992·Granted Feb 8, 1994·21 cites·9 claims
- 2458US5644157AHigh withstand voltage type semiconductor device having an isolation regionNIPPON DENSO CO·Filed 1996·Granted Jul 1, 1997·25 cites·30 claims
- 2558US5449946ASemiconductor device provided with isolation regionNIPPON DENSO CO·Filed 1994·Granted Sep 12, 1995·28 cites·18 claims
- 2656US5592015ADielectric isolated type semiconductor device provided with bipolar elementNIPPON DENSO CO·Filed 1995·Granted Jan 7, 1997·23 cites·21 claims
- 2756US5557134ADielectric isolated type semiconductor deviceNIPPON DENSO CO·Filed 1994·Granted Sep 17, 1996·25 cites·16 claims
- 2854US7109558B2Power MOS transistor having capability for setting substrate potential independently of source potentialDENSO CORP·Filed 2002·Granted Sep 19, 2006·6 cites·19 claims
- 2950US7193326B2Mold type semiconductor deviceDENSO CORP·Filed 2004·Granted Mar 20, 2007·3 cites·23 claims
- 3049US7468318B2Method for manufacturing mold type semiconductor deviceDENSO CORP·Filed 2007·Granted Dec 23, 2008·0 cites·5 claims
- 3148US7579212B2Semiconductor device having tin-based solder layer and method for manufacturing the sameDENSO CORP·Filed 2007·Granted Aug 25, 2009·0 cites·16 claims
- 3243US6972459B2Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrateDENSO CORP·Filed 2002·Granted Dec 6, 2005·2 cites·9 claims
- 3341US6287933B1Semiconductor device having thin film resistor and method of producing sameNIPPON DENSO CO·Filed 1992·Granted Sep 11, 2001·10 cites·2 claims
- 3439US2005170555A1Method of manufacturing a semiconductor device including electrodes on main and reverse sides of a semiconductor chipDENSO CORP·Filed 2005·Application pending·0 cites
- 3538US2006081996A1Semiconductor device having aluminum electrode and metallic electrodeDENSO CORP·Filed 2005·Application pending·0 cites
- 3636US2006055056A1Semiconductor equipment having a pair of heat radiation platesDENSO CORP·Filed 2004·Application pending·0 cites
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