Inventor · disambiguated record
Toshiaki Iwamatsu
Also filed as: IWAMATSU TOSHIAKI
179 granted patents·44 pending applications·3,469 citations·filing 1992–2024
99Inventor score
Files withMITSUBISHI ELECTRIC CORP80RENESAS TECH CORP71RENESAS ELECTRONICS CORP50IWAMATSU TOSHIAKI6ISHIGAKI TAKASHI2
Top patents by PatentIndex Score
223 records- 0198US5627390ASemiconductor device with columnsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 6, 1997·200 cites·8 claims
- 0298US5355022AStacked-type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 11, 1994·347 cites·10 claims
- 0397US5659194ASemiconductor device having metal silicide filmMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 19, 1997·239 cites·20 claims
- 0497US5656842AVertical mosfet including a back gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 12, 1997·166 cites·16 claims
- 0595US7291542B2Semiconductor wafer and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Nov 6, 2007·23 cites·4 claims
- 0694US9196705B2Method of manufacturing a misfet on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 24, 2015·10 cites·7 claims
- 0794US8941178B2MOS field-effect transistor formed on the SOI substrateRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 27, 2015·9 cites·3 claims
- 0894US5780888ASemiconductor device with storage nodeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 14, 1998·94 cites·11 claims
- 0993US9484433B2Method of manufacturing a MISFET on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·5 cites·9 claims
- 1093US6693324B2Semiconductor device having a thin film transistor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 17, 2004·118 cites·15 claims
- 1192US6455894B1Semiconductor device, method of manufacturing the same and method of arranging dummy regionMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 24, 2002·72 cites·10 claims
- 1292US6150688ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·75 cites·17 claims
- 1392US5652454ASemiconductor device on an SOI substrateFiled 1996·Granted Jul 29, 1997·92 cites·29 claims
- 1491US12261205B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Granted Mar 25, 2025·0 cites·15 claims
- 1591US6303425B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 16, 2001·45 cites·15 claims
- 1691US5440161ASemiconductor device having an SOI structure and a manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 8, 1995·91 cites·18 claims
- 1790US9263346B2Semiconductor device with silicon layer containing carbonRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 16, 2016·7 cites·4 claims
- 1890US6933565B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2000·Granted Aug 23, 2005·39 cites·13 claims
- 1990US6495898B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 17, 2002·47 cites·8 claims
- 2090US6303460B1Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 16, 2001·54 cites·13 claims
- 2190US6144072ASemiconductor device formed on insulating layer and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 7, 2000·68 cites·13 claims
- 2289US9184053B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 10, 2015·11 cites·16 claims
- 2389US7358555B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 15, 2008·16 cites·22 claims
- 2489US6383860B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·36 cites·15 claims
- 2588US9935125B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 3, 2018·6 cites·10 claims
- 2688US5841171ASOI Semiconductor devicesMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 24, 1998·64 cites·8 claims
- 2788US5504376AStacked-type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Apr 2, 1996·84 cites·11 claims
- 2888US2024395823A1Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2987US6875663B2Semiconductor device having a trench isolation and method of fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Apr 5, 2005·29 cites·32 claims
- 3087US5910672ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 8, 1999·74 cites·6 claims
- 3187US5872037AMethod for manufacturing a vertical mosfet including a back gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 16, 1999·62 cites·7 claims
- 3286US11996448B2Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layerRENESAS ELECTRONICS CORP·Filed 2023·Granted May 28, 2024·0 cites·15 claims
- 3386US9201440B2Semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 1, 2015·7 cites·7 claims
- 3486US8492230B2Semiconductor device and method of manufacturing the sameISHIKAWA KOZO·Filed 2010·Granted Jul 23, 2013·15 cites·21 claims
- 3586US8350331B2Semiconductor device and manufacturing method for the sameRENESAS ELECTRONICS CORP·Filed 2007·Granted Jan 8, 2013·13 cites·4 claims
- 3686US6649976B2Semiconductor device having metal silicide film and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 18, 2003·25 cites·4 claims
- 3785US9130039B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 8, 2015·5 cites·2 claims
- 3885US7453135B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Nov 18, 2008·9 cites·10 claims
- 3985US6509583B1Semiconductor device formed on insulating layer and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 21, 2003·20 cites·3 claims
- 4085US5514880AField effect thin-film transistor for an SRAM with reduced standby currentMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 7, 1996·56 cites·15 claims
- 4184US7402865B2Semiconductor device including a contact connected to the body and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Jul 22, 2008·9 cites·10 claims
- 4284US7067881B2Semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Jun 27, 2006·29 cites·6 claims
- 4384US6319805B1Semiconductor device having metal silicide film and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 20, 2001·21 cites·4 claims
- 4483US12080716B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2023·Granted Sep 3, 2024·0 cites·12 claims
- 4583US6794717B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Sep 21, 2004·23 cites·11 claims
- 4682US10461158B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2018·Granted Oct 29, 2019·1 cites·10 claims
- 4781US10121705B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 6, 2018·4 cites·18 claims
- 4881US9722044B2Manufacturing method of semiconductor device with silicon layer containing carbonRENESAS ELECTRONICS CORP·Filed 2016·Granted Aug 1, 2017·2 cites·6 claims
- 4981US8183115B2Method of manufacturing a semiconductor device having elevated layers of differing thicknessISHIGAKI TAKASHI·Filed 2011·Granted May 22, 2012·5 cites·8 claims
- 5081US6462428B2Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 8, 2002·27 cites·5 claims
Showing the top 50 of 223 patent records by PatentIndex Score.
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