Inventor · disambiguated record
Yih-Yin Lin
Also filed as: LIN YIH-YIN · LIN YIH-YIN NMI
11 granted patents·2 pending applications·27 citations·filing 1999–2015
85Inventor score
Top patents by PatentIndex Score
13 records- 0193US9281417B1GaN-based schottky diode having large bond pads and reduced contact resistanceVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted Mar 8, 2016·14 cites·14 claims
- 0272US9202935B2Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage currentVISHAY GEN SEMICONDUCTOR LLC·Filed 2013·Granted Dec 1, 2015·2 cites·7 claims
- 0366US9966429B2Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage currentVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted May 8, 2018·1 cites·17 claims
- 0466US9331142B2Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage currentVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted May 3, 2016·1 cites·7 claims
- 0558US8928065B2Trench DMOS device with improved termination structure for high voltage applicationsHSU CHIH-WEI·Filed 2010·Granted Jan 6, 2015·1 cites·18 claims
- 0658US8853770B2Trench MOS device with improved termination structure for high voltage applicationsHSU CHIH-WEI·Filed 2010·Granted Oct 7, 2014·1 cites·18 claims
- 0753US2014357059A1Schottky rectifierVISHAY GEN SEMICONDUCTOR LLC·Filed 2014·Application pending·0 cites
- 0849US8816468B2Schottky rectifierHSU CHIH-WEI·Filed 2011·Granted Aug 26, 2014·0 cites·8 claims
- 0943US9368584B2Gallium nitride power semiconductor device having a vertical structureVISHAY GEN SEMICONDUCTOR LLC·Filed 2013·Granted Jun 14, 2016·0 cites·17 claims
- 1041US8981381B2GaN-based Schottky diode having dual metal, partially recessed electrodeVISHAY GEN SEMICONDUCTOR LLC·Filed 2012·Granted Mar 17, 2015·0 cites·20 claims
- 1141US8981528B2GaN-based Schottky diode having partially recessed anodeVISHAY GEN SEMICONDUCTOR LLC·Filed 2012·Granted Mar 17, 2015·0 cites·20 claims
- 1237US2013168765A1Trench dmos device with improved termination structure for high voltage applicationsLIN YIH-YIN·Filed 2012·Application pending·0 cites
- 1330US6291316B1Method for fabricating passivated semiconductor devicesGEN SEMICONDUCTOR OF TAIWAN LT·Filed 1999·Granted Sep 18, 2001·7 cites·6 claims
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