Inventor · disambiguated record
Shigeki Ohbayashi
Also filed as: OHBAYASHI SHIGEKI
66 granted patents·4 pending applications·1,581 citations·filing 1990–2017
99Inventor score
Files withMITSUBISHI ELECTRIC CORP45RENESAS TECH CORP16RENESAS ELECTRONICS CORP4NII KOJI2TOMITA HIDEMOTO2
Top patents by PatentIndex Score
70 records- 0197US8422274B2Semiconductor storage device and method of fabricating the sameTOMITA HIDEMOTO·Filed 2011·Granted Apr 16, 2013·108 cites·9 claims
- 0297US7570525B2Semiconductor memory device with adjustable selected work line potential under low voltage conditionRENESAS TECH CORP·Filed 2006·Granted Aug 4, 2009·53 cites·17 claims
- 0397US6812574B2Semiconductor storage device and method of fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Nov 2, 2004·150 cites·11 claims
- 0497US5124589ASemiconductor integrated circuit capable of synchronous and asynchronous operations and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 23, 1992·172 cites·24 claims
- 0591US9299418B2Semiconductor memory device for stably reading and writing dataRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 29, 2016·9 cites·3 claims
- 0691US8743645B2Semiconductor memory device for stably reading and writing dataNII KOJI·Filed 2011·Granted Jun 3, 2014·10 cites·2 claims
- 0790US5991223ASynchronous semiconductor memory device operable in a burst modeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 23, 1999·86 cites·18 claims
- 0888US6574159B2Semiconductor memory device and testing method thereforMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jun 3, 2003·51 cites·23 claims
- 0986US6556058B2Power on reset circuitMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Apr 29, 2003·24 cites·2 claims
- 1084US6469552B2Power on reset circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 22, 2002·23 cites·2 claims
- 1184US5666324AClock synchronous semiconductor memory device having current consumption reducedMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 9, 1997·61 cites·15 claims
- 1283US5703510APower on reset circuit for generating reset signal at power onMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 30, 1997·42 cites·4 claims
- 1383US5491655ASemiconductor memory device having non-selecting level generation circuitry for providing a low potential during reading mode and high level potential during another operation modeMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 13, 1996·38 cites·4 claims
- 1481US8098533B2Semiconductor memory device with adjustable selected word line potential under low voltage conditionNII KOJI·Filed 2009·Granted Jan 17, 2012·8 cites·6 claims
- 1581US6373760B1Static type semiconductor memory device adopting a redundancy systemMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 16, 2002·31 cites·6 claims
- 1680US6141269ASemiconductor integrated circuit device using BiCMOS technologyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 31, 2000·40 cites·6 claims
- 1780US5663905ASemiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 2, 1997·35 cites·44 claims
- 1880US5659513AStatic semiconductor memory device having improved characteristicsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·31 cites·3 claims
- 1980US5544105AStatic semiconductor memory device having circuitry for lowering potential of bit lines at commencement of data writingMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 6, 1996·29 cites·7 claims
- 2078US7076705B2Semiconductor integrated circuit having bonding optional functionRENESAS TECH CORP·Filed 2005·Granted Jul 11, 2006·7 cites·7 claims
- 2177US5684750ASemiconductor memory device with a sense amplifier including two types of amplifiersMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 4, 1997·52 cites·17 claims
- 2275US10262707B2Semiconductor memory device for stably reading and writing dataRENESAS ELECTRONICS CORP·Filed 2017·Granted Apr 16, 2019·2 cites·4 claims
- 2375US7589566B2Semiconductor device provided with antenna ratio countermeasure circuitRENESAS TECH CORP·Filed 2005·Granted Sep 15, 2009·6 cites·29 claims
- 2475US5506805AStatic semiconductor memory device having circuitry for enlarging write recovery marginMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 9, 1996·25 cites·5 claims
- 2575US5274597ASemiconductor memory device capable of driving divided word lines at high speedMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 28, 1993·37 cites·18 claims
- 2674US5555522ASemiconductor memory having redundant cellsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 10, 1996·36 cites·24 claims
- 2774US5216298AECL input buffer for BiCMOSMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 1, 1993·25 cites·12 claims
- 2873US6479860B2Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 12, 2002·18 cites·9 claims
- 2971US5629900ASemiconductor memory device operable to write data accurately at high speedMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 13, 1997·20 cites·7 claims
- 3070US6320802B1Program circuit suppressing stand-by current and permitting highly reliable operation, and semiconductor memory device using the program circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 20, 2001·18 cites·12 claims
- 3169US5602798ASynchronous semiconductor memory device operable in a snooze modeMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 11, 1997·28 cites·10 claims
- 3268US8395932B2Semiconductor storage device and method of fabricating the sameTOMITA HIDEMOTO·Filed 2010·Granted Mar 12, 2013·3 cites·14 claims
- 3368US6704238B2Semiconductor memory device including data bus pairs respectively dedicated to data writing and data readingRENESAS TECH CORP·Filed 2002·Granted Mar 9, 2004·18 cites·7 claims
- 3468US6295222B2Semiconductor memory device with two layers of bit linesMITSUBISHI KABUSHIKI KAISHA·Filed 2001·Granted Sep 25, 2001·18 cites·10 claims
- 3567US6229365B1Semiconductor integrated circuit device operating stably at a plurality of power supply voltage levelsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 8, 2001·21 cites·11 claims
- 3666US6710634B2Power on reset circuitRENESAS TECH CORP·Filed 2003·Granted Mar 23, 2004·9 cites·1 claims
- 3765US6741510B2Semiconductor memory device capable of performing burn-in test at high speedRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·14 cites·11 claims
- 3865US5515326AStatic semiconductor memory device having circuitry for lowering potential of bit lines at commencement of data writingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 7, 1996·16 cites·3 claims
- 3964US9672900B2Semiconductor memory device for stably reading and writing dataRENESAS ELECTRONICS CORP·Filed 2016·Granted Jun 6, 2017·1 cites·3 claims
- 4064US6314037B1Semiconductor integrated circuit device using BiCMOS technologyMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 6, 2001·12 cites·16 claims
- 4163US7505339B2Static semiconductor memory device allowing simultaneous writing of data into a plurality of memory cellsRENESAS TECH CORP·Filed 2006·Granted Mar 17, 2009·5 cites·10 claims
- 4263US6597041B2Semiconductor static random access memory deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 22, 2003·11 cites·9 claims
- 4363US6521951B2Semiconductor circuit device with improved surge resistanceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Feb 18, 2003·13 cites·7 claims
- 4463US6388857B1Semiconductor circuit device with improved surge resistanceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 14, 2002·18 cites·13 claims
- 4558US6781869B2Semiconductor memoryRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·10 cites·10 claims
- 4657US6714478B2Semiconductor memory device having divided word line structureRENESAS TECH CORP·Filed 2002·Granted Mar 30, 2004·10 cites·7 claims
- 4757US5781468ASemiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 14, 1998·13 cites·3 claims
- 4856US7038925B1Static semiconductor memory device having T-type bit line structureRENESAS TECH CORP·Filed 2001·Granted May 2, 2006·9 cites·7 claims
- 4955US6891743B2Semiconductor memory device having a capacitive plate to reduce soft errorsRENESAS TECH CORP·Filed 2002·Granted May 10, 2005·6 cites·12 claims
- 5054US8908419B2Semiconductor storage device and method of fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Dec 9, 2014·0 cites·3 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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