Inventor · disambiguated record
Wan Hsuan Hsu
Also filed as: HSU WAN HSUAN · HSU WAN P
9 granted patents·3 pending applications·7 citations·filing 2005–2024
80Inventor score
Top patents by PatentIndex Score
12 records- 0191US10037918B2Contact structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·7 cites·20 claims
- 0280US12112953B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0380US2024395559A1Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0475US11923199B2Method and structure of middle layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 0571US11776818B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 0667US11398380B2Method and structure of middle layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 0767US11282750B2Contact structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
- 0863US10985028B1Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 0960US10658179B2Method and structure of middle layer removalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·0 cites·20 claims
- 1059US10770356B2Contact structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·0 cites·20 claims
- 1152US2007264445A1Process for forming durable layer for in-mold decorationWANG FEI·Filed 2007·Application pending·0 cites
- 1250US2006093813A1Durable layer composition for in-mold decorationWANG FEI·Filed 2005·Application pending·0 cites
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